General description

A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial

applications. The transistor can deliver 200 W in broadband applications from HF to

860 MHz. The excellent ruggedness and broadband performance of this device makes it

ideal for digital transmitter applications.

Features and benefits

 Integrated ESD protection

 Excellent ruggedness

 High power gain

 High efficiency

 Excellent reliability

 Easy power control

 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

Applications

 Transmitter applications in the HF to 860 MHz frequency range

 Industrial applications in the HF to 860 MHz frequency range

 Broadcast transmitters