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BF12晶体管资料
BF120别名：BF120三极管、BF120晶体管、BF120晶体三极管
BF120生产厂家：德国椤茨标准电器公司
BF120制作材料：Si-NPN
BF120性质：电视 （TV）_行输出 （HA）_振荡级 （O）
BF120封装形式：直插封装
BF120极限工作电压：220V
BF120最大电流允许值：0.05A
BF120最大工作频率：<1MHZ或未知
BF120引脚数：3
BF120最大耗散功率：0.3W
BF120放大倍数：
BF120图片代号：D-8
BF120vtest：220
BF120htest：999900
- BF120atest：0.05
BF120wtest：0.3
BF120代换 BF120用什么型号代替：BF298,BF299,BF258,BF259,BF337,BF422,BF658,3DG170J,
BF12价格
参考价格：￥0.2860
型号：BF1201R 品牌：NXP/PHILIPS 备注：这里有BF12多少钱，2025年最近7天走势，今日出价，今日竞价，BF12批发/采购报价，BF12行情走势销售排行榜，BF12报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BF12 | Mounting flange 文件：253.32 Kbytes Page：1 Pages | PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd 倍加福倍加福（北京）过程自动化控制设备有限公司 |  |   |
BF12 | 包装：盒 描述：M12 DIA MOUNTING FLANGE 传感器，变送器 配件 | ETC 知名厂家 | ETC | |
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1202,BF1202RandBF1202WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1202,BF1202RandBF1202WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1202,BF1202RandBF1202WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Dual N-channel dual gate MOS-FET DESCRIPTION TheBF1203isacombinationoftwodifferentdualgateMOS-FETamplifierswithsharedsourceandgate2leads.Thesourceandsubstrateareinterconnected. InternalbiascircuitsenableDCstabilizationandaverygoodcross-modulationperformanceduringAGC. Integrateddiodesbetwe | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Dual N-channel dual gate MOS-FET DESCRIPTION TheBF1204isacombinationoftwoequaldualgateMOS-FETamplifierswithsharedsourceandgate2leads.Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabilizationandaverygoodcross-modulationperformanceduringAGC.Integrateddiodesbetweent | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Dual N-channel dual gate MOS-FET DESCRIPTION TheBF1205isacombinationoftwoequaldualgateMOS-FETamplifierswithsharedsourceandgate2leadsandanintegratedswitch.Theintegratedswitchisoperatedbythegate1biasofamplifierb.Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabil | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
Dual N-channel dual gate MOS-FET Generaldescription TheBF1205CisacombinationoftwodualgateMOS-FETamplifierswithsharedsourceandgate2leadsandanintegratedswitch.Theintegratedswitchisoperatedbythegate1biasofamplifierb. Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCst | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
Dual N-channel dual-gate MOS-FET DESCRIPTION TheBF1206isacombinationoftwodifferentdualgateMOS-FETamplifierswithsharedsourceandgate2leads.Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabilizationandaverygoodcross-modulationperformanceduringAGC.Integrateddiodesbetween | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Dual N-channel dual gate MOSFET Generaldescription TheBF1206FisacombinationoftwodifferentdualgateMOSFETamplifierswithsharedsourceandgate2leads. Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDirectCurrent(DC)stabilizationandaverygoodcross-modulationperformanceduringAutom | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
Dual N-channel dual gate MOSFET Generaldescription TheBF1207isacombinationoftwodualgateMOSFETamplifierswithsharedsourceandgate2leadsandanintegratedswitch. Features ■Twolownoisegaincontrolledamplifiersinasinglepackage.Onewithafullyintegratedbiasandonewithpartlyintegratedbias ■Intern | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Dual N-channel dual gate MOSFET Generaldescription TheBF1208isacombinationoftwodualgateMOSFETamplifierswithsharedsourceandgate2leadsandanintegratedswitch.Theintegratedswitchisoperatedbythegate1biasofamplifierB. Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabil | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Dual N-channel dual gate MOSFET Generaldescription TheBF1208DisacombinationoftwodualgateMOSFETamplifierswithsharedsourceandgate2leadsandanintegratedswitch.Theintegratedswitchisoperatedbythegate1biasofamplifierB. Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabi | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Dual N-channel dual gate MOSFET Generaldescription TheBF1210isacombinationoftwodualgateMOSFETamplifierswithsharedsourceandgate2leads. Thesourceandsubstrateareinterconnected.InternalbiascircuitsenableDCstabilizationandaverygoodcrossmodulationperformanceduringAGC.Integrateddiodesbetweenth | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1211,BF1211RandBF1211WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1211,BF1211RandBF1211WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1211,BF1211RandBF1211WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1212,BF1212RandBF1212WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1212,BF1212RandBF1212WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1212,BF1212RandBF1212WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual gate MOSFET | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
2.0mm Pitch Pin Header Dual Row, Surface Mount 文件：116.1 Kbytes Page：1 Pages | GCT Global Connector Technology |  | | |
N-channel dual-gate PoLo MOS-FETs 文件：127.23 Kbytes Page：16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 |  | | |
N-channel dual-gate PoLo MOS-FETs 文件：127.23 Kbytes Page：16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | | | |
封装/外壳：SOT-143R 包装：卷带（TR） 描述：MOSFET 2N-CH 10V 30MA SOT143R 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs 文件：129.289 Kbytes Page：16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | | | |
N-channel dual-gate PoLo MOS-FETs 文件：129.289 Kbytes Page：16 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | | | |
N-channel dual-gate PoLo MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs | ETC 知名厂家 | ETC | |
BF12产品属性
- 类型
描述
- 型号
BF12
- 制造商
PEPPERL+FUCHS
- 功能描述
Mounting Bracket, Adjustable, 12mm Diameter
- 制造商
Burndy
- 功能描述
1X BRAID 12 1.50 C-C 36
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA |
05+ |
SOT143B |
6000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
23+ |
SOT-343 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
恩XP |
24+ |
SOT-343 |
33500 |
全新进口原装现货,假一罚十 |
|||
恩XP |
23+ |
SC70-6 |
3000 |
只做原装全系列供应价格优势 |
|||
恩XP |
24+ |
SOT363 |
8950 |
BOM配单专家,发货快,价格低 |
|||
恩XP |
24+ |
6000 |
|||||
恩XP |
2025+ |
SOT-343 |
32560 |
原装优势绝对有货 |
|||
恩XP |
2430+ |
SOT363 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
PHI |
19+ |
SOT-343 |
23000 |
||||
AME |
23+ |
SOT143 |
5000 |
原装正品,假一罚十 |
BF12芯片相关品牌
BF12规格书下载地址
BF12参数引脚图相关
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
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- bul128a
- bul128
- bu406
- bq5
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- bga
- bf419
- BF153
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- BF140S
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- BF140D
- BF140A
- BF140
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- BF134
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- BF130
- BF127
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- BF123
- BF1215
- BF1214
- BF1212R
- BF1212
- BF1211R
- BF1211
- BF1210
- BF121
- BF1208D
- BF1208
- BF1207
- BF1206F
- BF1206
- BF1205C
- BF1205
- BF1204
- BF1203
- BF1202R
- BF1202
- BF1201R
- BF1201
- BF120
- BF119
- BF118
- BF117
- BF115
- BF114
- BF1118W
- BF1118R
- BF1118
- BF111
- BF1109R
- BF1109
- BF1108W
- BF1108R
- BF1108
- BF1107W
- BF1107
- BF1105R
- BF1105
- BF1102R
- BF1102
- BF1101R
- BF1101
- BF1100R
- BF1100
- BF110
- BF10S
- BF109
- BF108
- BF1
- BDY99
- BDY98
- BDY97
- BDY96
- BDY95
- BDY94
- BDY93
- BDY92
- BDY91
- BDY90
BF12数据表相关新闻
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进口代理
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BE-A301
2022-3-15BF7612CM28，40k现货，批次21+
BF7612CM28，40k现货，批次21+
2021-11-18BF7612CM28，BYD，40K，21+
BF7612CM28，BYD，40K，21+
2021-11-10BF862215
JFET-25V射频结栅场效应晶体管(RFJFET)晶体管,SMD/SMT射频结栅场效应晶体管(RFJFET)晶体管,JFET射频结栅场效应晶体管(RFJFET)晶体管,GaNSiCSMD/SMT射频结栅场效应晶体管(RFJFET)晶体管,JFETN-Channel射频结栅场效应晶体管(RFJFET)晶体管,MESFET射
2020-8-5BD9F800 DC / DC降压开关稳压器BD9F800MUX-ZE2
ROHMSemiconductors的BD9F800是具有高速响应的恒定导通时间控制的DC/DC转换器
2020-6-9
DdatasheetPDF页码索引
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