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BF12晶体管资料
BF120别名：BF120三极管、BF120晶体管、BF120晶体三极管
BF120生产厂家：德国椤茨标准电器公司
BF120制作材料：Si-NPN
BF120性质：电视 （TV）_行输出 （HA）_振荡级 （O）
BF120封装形式：直插封装
BF120极限工作电压：220V
BF120最大电流允许值：0.05A
BF120最大工作频率：<1MHZ或未知
BF120引脚数：3
BF120最大耗散功率：0.3W
BF120放大倍数：
BF120图片代号：D-8
BF120vtest：220
BF120htest：999900
- BF120atest：0.05
BF120wtest：0.3
BF120代换 BF120用什么型号代替：BF298,BF299,BF258,BF259,BF337,BF422,BF658,3DG170J,
BF12价格
参考价格：￥0.2860
型号：BF1201R 品牌：NXP/PHILIPS 备注：这里有BF12多少钱，2025年最近7天走势，今日出价，今日竞价，BF12批发/采购报价，BF12行情走势销售排行榜，BF12报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BF12 | Mounting flange 文件：253.32 Kbytes Page：1 Pages | PF 倍加福 |   | |
BF12 | 包装：盒 描述：M12 DIA MOUNTING FLANGE 传感器，变送器 配件 | ETC 知名厂家 | ETC | |
N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Dual N-channel dual gate MOS-FET DESCRIPTION The BF1203 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes betwe | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Dual N-channel dual gate MOS-FET DESCRIPTION The BF1204 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between t | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Dual N-channel dual gate MOS-FET DESCRIPTION The BF1205 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circuits enable DC stabil | Philips 飞利浦 | | ||
Dual N-channel dual gate MOS-FET General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circuits enable DC st | Philips 飞利浦 | | ||
Dual N-channel dual-gate MOS-FET DESCRIPTION The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Dual N-channel dual gate MOSFET General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Autom | Philips 飞利浦 | | ||
Dual N-channel dual gate MOSFET General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. Features ■ Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with partly integrated bias ■ Intern | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Dual N-channel dual gate MOSFET General description The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabil | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Dual N-channel dual gate MOSFET General description The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabi | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
Dual N-channel dual gate MOSFET General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between th | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1211, BF1211R and BF1211WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1212, BF1212R and BF1212WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1212, BF1212R and BF1212WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual-gate MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1212, BF1212R and BF1212WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飞利浦 | | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
N-channel dual gate MOSFET | ETC 知名厂家 | ETC | | |
RF Manual 16th edition | ETC 知名厂家 | ETC | | |
2.0mm Pitch Pin Header Dual Row, Surface Mount 文件：116.1 Kbytes Page：1 Pages | GCT | | ||
中频滤波器 | SHOULDER 好达电子 | | ||
N-channel dual-gate PoLo MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs 文件：127.23 Kbytes Page：16 Pages | JMNIC 锦美电子 | | ||
N-channel dual-gate PoLo MOS-FETs 文件：127.23 Kbytes Page：16 Pages | JMNIC 锦美电子 | | ||
波导负载 | ETC 知名厂家 | ETC | | |
封装/外壳：SOT-143R 包装：卷带（TR） 描述：MOSFET 2N-CH 10V 30MA SOT143R 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs | ETC 知名厂家 | ETC | | |
N-channel dual-gate PoLo MOS-FETs 文件：129.289 Kbytes Page：16 Pages | JMNIC 锦美电子 | |
BF12产品属性
- 类型
描述
- 型号
BF12
- 制造商
PEPPERL+FUCHS
- 功能描述
Mounting Bracket, Adjustable, 12mm Diameter
- 制造商
Burndy
- 功能描述
1X BRAID 12 1.50 C-C 36
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
SOT343 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
PHI |
19+ |
SOT-343 |
23000 |
||||
MOT/PHI |
专业铁帽 |
TO-39 |
6890 |
原装铁帽专营,代理渠道量大可订货 |
|||
恩XP |
08+ |
SOT-343 |
23400 |
原装正品 可含税交易 |
|||
PHI |
1922+ |
SOT143 |
90000 |
原装进口现货库存专业工厂研究所配单供货 |
|||
PHI |
23+ |
SOT143 |
50000 |
全新原装正品现货,支持订货 |
|||
PHI |
24+ |
NA |
9000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
恩XP |
22+ |
SOT143 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
恩XP |
24+ |
标准封装 |
17048 |
全新原装正品/价格优惠/质量保障 |
|||
恩XP |
23+ |
SOT-343 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
BF12规格书下载地址
BF12参数引脚图相关
- c901
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BF153
- BF152
- BF140S
- BF140R
- BF140D
- BF140A
- BF140
- BF138
- BF137
- BF136
- BF134
- BF133
- BF132
- BF131
- BF130
- BF127
- BF125
- BF123
- BF1215
- BF1214
- BF1212R
- BF1212
- BF1211R
- BF1211
- BF1210
- BF121
- BF1208D
- BF1208
- BF1207
- BF1206F
- BF1206
- BF1205C
- BF1205
- BF1204
- BF1203
- BF1202R
- BF1202
- BF1201R
- BF1201
- BF120
- BF119
- BF118
- BF117
- BF115
- BF114
- BF1118W
- BF1118R
- BF1118
- BF111
- BF1109R
- BF1109
- BF1108W
- BF1108R
- BF1108
- BF1107W
- BF1107
- BF1105R
- BF1105
- BF1102R
- BF1102
- BF1101R
- BF1101
- BF1100R
- BF1100
- BF110
- BF10S
- BF109
- BF108
- BF1
- BDY99
- BDY98
- BDY97
- BDY96
- BDY95
- BDY94
- BDY93
- BDY92
- BDY91
- BDY90
BF12数据表相关新闻
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2020-6-9
DdatasheetPDF页码索引
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