DESCRIPTION

Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

FEATURES

• Short channel transistor with high

forward transfer admittance to input

capacitance ratio

• Low noise gain controlled amplifier

• Partly internal self-biasing circuit to

ensure good cross-modulation

performance during AGC and good

DC stabilization.

APPLICATIONS

• VHF and UHF applications with

3 to 9 V supply voltage, such as

digital and analogue television

tuners and professional

communications equipment.