N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

RF Manual 16th edition

N-channel dual-gate PoLo MOS-FETs

N-channel dual-gate PoLo MOS-FETs

N-channel dual-gate MOSFET

封装/外壳：SC-82A，SOT-343 包装：管件 描述：MOSFET 2N-CH 10V 30MA SOT343R 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：SC-82A，SOT-343 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH DUAL GATE 4DFP 分立半导体产品 晶体管 - FET，MOSFET - 射频

ROTARY MOTION | PRECISION SENSOR

Features • Bushing mount / Sleeve Bearing • 7/8” to 3” diameter bushing mount • Wirewound single-turn precision potentiometers

1202 Series Hardwired AC Hybrid Surge Protective Device (H-SPD)

Features Hybrid protection technology Extremely low leakage current Heavy duty surge protection LED indicators Compact form factor Indoor or outdoor installation Applications Service entrance, branch and OEM panels Electrical infrastructures Equipment and systems Protection from light

Original Strain Relief Bushings

文件：91.01 Kbytes Page：1 Pages

Bulk Metal® Foil Technology Precision Trimming Potentiometers, 1 1/4 Inch Rectilinear, RJ12 Style, Designed to Meet or Exceed The Requirements of MIL-PRF-22097, Char. F

文件：137.03 Kbytes Page：6 Pages

RF Coated Chokes (Axial Leads)

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