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型号 功能描述 生产厂家 企业 LOGO 操作
BF1206

Dual N-channel dual-gate MOS-FET

DESCRIPTION The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between

PHILIPS

飞利浦

BF1206

RF Manual 16th edition

ETC

知名厂家

BF1206

Dual N-channel dual-gate MOS-FET

ETC

知名厂家

Dual N-channel dual gate MOSFET

General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Autom

PHILIPS

飞利浦

封装/外壳:6-TSSOP,SC-88,SOT-363 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:FET RF 6V 400MHZ 6TSSOP 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

Dual N-channel dual-gate MOS-FET

文件:192.03 Kbytes Page:21 Pages

JMNIC

锦美电子

Dual N-channel dual-gate MOS-FET

文件:192.03 Kbytes Page:21 Pages

JMNIC

锦美电子

Dual N-channel dual gate MOSFET

ETC

知名厂家

Dual N-channel dual gate MOSFET

文件:213.36 Kbytes Page:17 Pages

JMNIC

锦美电子

Dual N-channel dual gate MOSFET

文件:213.36 Kbytes Page:17 Pages

JMNIC

锦美电子

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

POLYFET

Integrated Circuit Phase Lock Loop (PLL) Stereo Decoder

Features: ● Requires No Inductors ● Low External Part Count ● Only Oscillator Frequency Adjustment Necessary ● Integral Stereo/Monaural Switch 75mA Lamp Driving Capability ● Wide Dynamic Range: Typically up to 1.3V(RMS) Composite Input Signal ● Wide Supply Voltage: 8V to 16V ● Excellent Cha

NTE

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH, family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all “freewheel mode” operations and is particularly suitable and efficient in motor control freewheel applications and in booster diode applications in power factor control ci

STMICROELECTRONICS

意法半导体

High efficiency DC/DC converter

文件:78.42 Kbytes Page:16 Pages

PHILIPS

飞利浦

High efficiency DC/DC converter

文件:78.42 Kbytes Page:16 Pages

PHILIPS

飞利浦

更新时间:2026-5-25 9:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
24+
SOT-666
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
恩XP
0705+PB
SOT363
4000
原装现货
恩XP
24+
SOT666-6
64580
原装现货假一赔十
恩XP
25+
SOT-363
880000
明嘉莱只做原装正品现货
恩XP
24+
SC70-6
8000
新到现货,只做全新原装正品
恩XP
2023+
SOT363
12000
全新正品旗舰店,价格绝对优势
PHI
25+
SOT-666
32000
PHILIPS/飞利浦全新特价BF1206F即刻询购立享优惠#长期有货
恩XP
2025+
SOT-363
5000
原装进口价格优 请找坤融电子!
恩XP
25+
90000
全新原装现货
恩XP
25+
SOT363
10000
全新原装现货库存

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