RF Manual 16th edition

Dual N-channel dual-gate MOS-FET

DESCRIPTION The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between

Dual N-channel dual-gate MOS-FET

Dual N-channel dual gate MOSFET

General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Autom

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 6V 400MHZ 6TSSOP 分立半导体产品 晶体管 - FET，MOSFET - 射频

Dual N-channel dual-gate MOS-FET

文件：192.03 Kbytes Page：21 Pages

Dual N-channel dual-gate MOS-FET

文件：192.03 Kbytes Page：21 Pages

Dual N-channel dual gate MOSFET

Dual N-channel dual gate MOSFET

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Dual N-channel dual gate MOSFET

文件：213.36 Kbytes Page：17 Pages

Type CRG Series

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USB 2.0 Common Mode Choke

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POLYPROPYLENE and FOIL

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P-V SERIES, THERMAL SENSITIVE CHIP ATTENUATORS

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RF Coated Chokes (Axial Leads)

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