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BF1202价格

参考价格:¥0.4550

型号:BF1202R 品牌:NXP/PHILIPS 备注:这里有BF1202多少钱,2026年最近7天走势,今日出价,今日竞价,BF1202批发/采购报价,BF1202行情走势销售排行榜,BF1202报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BF1202

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

PHILIPS

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BF1202

RF Manual 16th edition

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BF1202

N-channel dual-gate PoLo MOS-FETs

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BF1202

N-channel dual-gate PoLo MOS-FETs

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N-channel dual-gate MOSFET

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RF Manual 16th edition

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N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

PHILIPS

飞利浦

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

PHILIPS

飞利浦

RF Manual 16th edition

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N-channel dual-gate MOSFET

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N-channel dual-gate PoLo MOS-FETs

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N-channel dual-gate PoLo MOS-FETs

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N-channel dual-gate PoLo MOS-FETs

文件:129.289 Kbytes Page:16 Pages

JMNIC

锦美电子

N-channel dual-gate PoLo MOS-FETs

文件:129.289 Kbytes Page:16 Pages

JMNIC

锦美电子

N-channel dual-gate PoLo MOS-FETs

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N-channel dual-gate PoLo MOS-FETs

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封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:MOSFET 2N-CH 10V 30MA SOT143R 分立半导体产品 晶体管 - FET,MOSFET - 射频

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N-channel dual-gate PoLo MOS-FETs

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N-channel dual-gate PoLo MOS-FETs

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封装/外壳:SC-82A,SOT-343 包装:管件 描述:MOSFET 2N-CH 10V 30MA SOT343R 分立半导体产品 晶体管 - FET,MOSFET - 射频

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Transmissive Optical Sensor with Phototransistor Output

Description This device has a compact construction where the emitting-light sources and the detectors are located face-to-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Features ● Compact construction ● No setting efforts ● Polyc

VISHAYVishay Siliconix

威世威世科技公司

Battery power unit

文件:123.15 Kbytes Page:24 Pages

PHILIPS

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Battery power unit

文件:123.15 Kbytes Page:24 Pages

PHILIPS

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更新时间:2026-5-14 13:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
25+
500000
行业低价,代理渠道
恩XP
25+
N/A
20000
原装,请咨询
恩XP
22+
SOT143R
9000
原厂渠道,现货配单
PHI
26+
LGA16
86720
全新原装正品价格最实惠 假一赔百
恩XP
25+
SOT-343
90000
全新原装现货
PHI
24+
SOT343
3000
原装现货假一罚十
恩XP
24+
SOT343R
6000
真实库存/绝无虚假/支持送货
恩XP
23+24
SOD523
136800
专业经营原装MOS管,二极管.三极管TVS瞬变抑制
恩XP
23+
SOT343
8560
受权代理!全新原装现货特价热卖!
恩XP
25+
SOT343
13931
NXP/恩智浦原装特价BF1202WR即刻询购立享优惠#长期有货

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