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BF1208D中文资料

厂家型号

BF1208D

文件大小

253.38Kbytes

页面数量

22

功能描述

Dual N-channel dual gate MOSFET

数据手册

原厂下载下载地址一下载地址二

生产厂商

PHI

BF1208D数据手册规格书PDF详情

General description

The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B.

The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT666 micro-miniature plastic package.

Features

■ Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with a partly integrated bias

■ Internal switch to save external components

■ Superior cross modulation performance during AGC

■ High forward transfer admittance

■ High forward transfer admittance to input capacitance ratio

Applications

■ Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage

◆ digital and analog television tuners

◆ professional communication equipment

更新时间:2025-11-1 13:21:00
供应商 型号 品牌 批号 封装 库存 备注 价格
恩XP
25+
SOT666
188600
全新原厂原装正品现货 欢迎咨询
恩XP
23+
SOT666
50000
全新原装正品现货,支持订货
恩XP
22+
SOT666
9000
原厂渠道,现货配单
恩XP
24+
NA/
500
优势代理渠道,原装正品,可全系列订货开增值税票
恩XP
23+
SOT666
8000
专注配单,只做原装进口现货
恩XP
23+
SOT666
7000
恩XP
25+
SOT-563 SOT-666
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
恩XP
25+
SOT666
500
原装正品,假一罚十!
Infineon
24+
SOT-323
57000
公司现货库存,支持实单
恩XP
24+
SOT666
60000
全新原装现货