Dual N-channel dual gate MOSFET

General description The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabi

RF Manual 16th edition

Dual N-channel dual gate MOSFET

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Dual N-channel dual gate MOSFET

Dual N-channel dual gate MOSFET

封装/外壳：SOT-563，SOT-666 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH DUAL GATE SOD666 分立半导体产品 晶体管 - FET，MOSFET - 射频

Dual N-channel dual gate MOSFET

文件：262.25 Kbytes Page：22 Pages

Dual N-channel dual gate MOSFET

文件：262.25 Kbytes Page：22 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

40Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,

12-Bit, uP Compatible, Double-Buffered D to A Converters

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12-Bit, uP Compatible, Double-Buffered D to A Converters

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130 MHz/85 MHz RGB Video Amplifier System with Blanking

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130 MHz/85 MHz RGB Video Amplifier System with Blanking

文件：917.6 Kbytes Page：23 Pages