Dual N-channel dual gate MOSFET

General description The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabi

RF Manual 16th edition

Dual N-channel dual gate MOSFET

Dual N-channel dual gate MOSFET

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Dual N-channel dual gate MOSFET

封装/外壳：SOT-563，SOT-666 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH DUAL GATE SOD666 分立半导体产品 晶体管 - FET，MOSFET - 射频

Dual N-channel dual gate MOSFET

文件：262.25 Kbytes Page：22 Pages

Dual N-channel dual gate MOSFET

文件：262.25 Kbytes Page：22 Pages

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Operating Voltage= 250 / 480 VAC 3 PH Wye OperatingCurrentMax= 80, 100amp

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