位置:BF1206F > BF1206F详情

BF1206F中文资料

厂家型号

BF1206F

文件大小

201.19Kbytes

页面数量

20

功能描述

Dual N-channel dual gate MOSFET

数据手册

下载地址一下载地址二

生产厂商

PHI

BF1206F数据手册规格书PDF详情

General description

The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads.

The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic package.

Features

■ Two low noise gain controlled amplifiers in a single package

■ Superior cross-modulation performance during AGC

■ High forward transfer admittance

■ High forward transfer admittance to input capacitance ratio

■ Suited for 3 volt applications

Applications

■ Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High Frequency (UHF) applications with 3 V supply voltage, such as digital and analog television tuners

更新时间:2026-1-2 14:14:00
供应商 型号 品牌 批号 封装 库存 备注 价格
PHI
25+
SOT-666
32000
PHILIPS/飞利浦全新特价BF1206F即刻询购立享优惠#长期有货
PHI
08+
SOT-666
16000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
PHI
2023+
SOT-666
8800
正品渠道现货 终端可提供BOM表配单。
恩XP
23+
SOT666
8000
专注配单,只做原装进口现货
恩XP
23+
SOT666
7000
恩XP
25+
SOT666
188600
全新原厂原装正品现货 欢迎咨询
恩XP
24+
SOT666
5000
全新原装正品,现货销售
恩XP
0705+PB
SOT363
4000
原装现货
恩XP
24+
SOT666
28347
只做全新原装进口现货
恩XP
25+
SOT666
350
原装正品,假一罚十!