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2SJ52价格
参考价格:¥0.8450
型号:2SJ520 品牌:SANYO 备注:这里有2SJ52多少钱,2024年最近7天走势,今日出价,今日竞价,2SJ52批发/采购报价,2SJ52行情走势销售排行榜,2SJ52报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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LoadSwitchingApplications LoadSwitchingApplications Features ·LowONresistance. ·2.5Vdrive. | SANYOSanyo 三洋三洋电机株式会社 | |||
Ultrahigh-SpeedSwitchingApplications Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance. | SANYOSanyo 三洋三洋电机株式会社 | |||
PCHANNELNOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS) ChopperRegulator,DC−DCConverterandMotorDriveApplications ●4-Vgatedrive ●Lowdrain−sourceONresistance:RDS(ON)=0.1Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=4.5S(typ.) ●Lowleakagecurrent:IDSS=−100μA(max)(VDS=−30V) ●Enhancementmode:Vth=−0.8to− | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.11Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=0.11Ωtyp. •Lowdrivecurrent •4Vgetedrivedevices •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.11Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPChannelMOSFETHighSpeedPowerSwitching SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgetedrivedevices •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPChannelMOSFETHighSpeedPowerSwitching SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgetedrivedevices •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
HightSpeedPowerSwitching HightSpeedPowerSwitching Features Lowon-resistance RDS(on)=0.3typ. Lowdrivecurrent Highspeedswitching 4Vgatedrivedevices. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPChannelMOSFETHighSpeedPowerSwitching SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgetedrivedevices •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.17Ωtyp. •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=0.17Ωtyp. •4Vgetedrivedevices •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.17Ωtyp. •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=0.17Ωtyp. •4Vgetedrivedevices •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.17Ωtyp. •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.17Ωtyp. •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
HightSpeedPowerSwitching Features •Lowon-resistance •RDS(on)=0.17typ. •Highspeedswitching •4Vgatedrivedevices. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistanceRDS(on)=0.17Ωtyp. •4Vgetedrivedevices •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.17Ωtyp. •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.12Ωtyp. •4Vgetedrivedevices •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.12Ωtyp. •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.12Ωtyp. •4Vgetedrivedevices •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.12Ωtyp. •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.12Ωtyp. •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.12Ωtyp. •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
HightSpeedPowerSwitching Features Lowon-resistance RDS(on)=0.12typ. Highspeedswitching 4Vgatedrivedevices. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.12Ωtyp. •4Vgetedrivedevices •Highspeedswitching | HitachiHitachi, Ltd. 日立公司 | |||
SiliconPChannelMOSFET Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.12Ωtyp. •4Vgatedrivedevices •Highspeedswitching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
P-Channel30-V(D-S)MOSFET 文件:1.01637 Mbytes Page:9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
ChopperRegulator,DC?묭CConverterandMotorDrive 文件:142.97 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconPChannelMOSTypeChopperRegulator,DC−DCConverterandMotorDriveApplications 文件:158.24 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
SiliconPChannelMOSTypeChopperRegulator,DC−DCConverterandMotorDriveApplications 文件:158.24 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
ChopperRegulator,DC?묭CConverterandMotorDrive 文件:142.97 Kbytes Page:3 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | |||
iscP-ChannelMOSFETTransistor 文件:298.69 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
P-Channel60-V(D-S)MOSFET 文件:1.58356 Mbytes Page:7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
SiliconPChannelMOSFET 文件:110.36 Kbytes Page:10 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SiliconPChannelMOSFET 文件:113.42 Kbytes Page:11 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
P-Channel60-V(D-S)MOSFET 文件:988.52 Kbytes Page:8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
SiliconPChannelMOSFET 文件:114.42 Kbytes Page:11 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
P-Channel40V(D-S)MOSFET 文件:976.3 Kbytes Page:7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
SiliconPChannelMOSFET 文件:114.08 Kbytes Page:11 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
P-Channel40V(D-S)MOSFET 文件:976.27 Kbytes Page:7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
iscP-ChannelMOSFETTransistor 文件:324.57 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
P-Channel60-V(D-S)MOSFET 文件:988.31 Kbytes Page:8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
P-Channel60-V(D-S)MOSFET 文件:988.34 Kbytes Page:8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 |
2SJ52产品属性
- 类型
描述
- 型号
2SJ52
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
Load Switching Applications
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SANYO |
21+ |
TO-252 |
35200 |
一级代理/放心采购 |
|||
SANYO |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
VBSEMI台湾微碧 |
23+ |
TO-252 |
22820 |
原装正品,支持实单 |
|||
Sanyo |
22+23+ |
To-252 |
29058 |
绝对原装正品全新进口深圳现货 |
|||
SANYO/三洋 |
23+ |
NA/ |
3570 |
原装现货,当天可交货,原型号开票 |
|||
SANYO |
22+ |
SOT-252 |
6300 |
||||
SANYO |
2008++ |
TO-252 |
8768 |
新进库存/原装 |
|||
SANYO/三洋 |
TO252 |
7906200 |
|||||
SANYO-三洋 |
24+25+/26+27+ |
TO-252-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
VBsemi |
24+ |
TO252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
2SJ52规格书下载地址
2SJ52参数引脚图相关
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2SJ52数据表相关新闻
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2019-10-30
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