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2SJ52价格

参考价格:¥0.8450

型号:2SJ520 品牌:SANYO 备注:这里有2SJ52多少钱,2026年最近7天走势,今日出价,今日竞价,2SJ52批发/采购报价,2SJ52行情走势销售排行榜,2SJ52报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Load Switching Applications

Load Switching Applications Features · Low ON resistance. · 2.5V drive.

SANYO

三洋

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance.

SANYO

三洋

P CHANNEL NOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 0.1 Ω (typ.) ● High forward transfer admittance : |Yfs| = 4.5 S (typ.) ● Low leakage current : IDSS = −100 μA (max) (VDS = −30 V) ● Enhancement mode : Vth = −0.8 to −

TOSHIBA

东芝

Power MOSFET (P-ch single)

Polarity:P-ch\nGeneration:L²-π-MOSⅤ\nRoHS Compatible Product(s) (#):Available Drain current ID -5 A \nPower Dissipation PD 1.3 W \nDrain-Source voltage VDSS -30 V ;

TOSHIBA

东芝

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID=-12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= -10V DESCRIPTION · High fast switching Power Supply

ISC

无锡固电

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Hight Speed Power Switching

Hight Speed Power Switching Features Low on-resistance RDS(on)=0.3 typ. Low drive current High speed switching 4V gate drive devices.

KEXIN

科信电子

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Hight Speed Power Switching

Features • Low on-resistance • RDS(on) = 0.17 typ. • High speed switching • 4V gate drive devices.

KEXIN

科信电子

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Hight Speed Power Switching

Features Low on-resistance RDS(on) = 0.12 typ. High speed switching 4V gate drive devices.

KEXIN

科信电子

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

P-Channel 30-V (D-S) MOSFET

文件:1.01637 Mbytes Page:9 Pages

VBSEMI

微碧半导体

P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

ONSEMI

安森美半导体

Silicon P Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件:158.24 Kbytes Page:3 Pages

TOSHIBA

东芝

Chopper Regulator, DC?묭C Converter and Motor Drive

文件:142.97 Kbytes Page:3 Pages

TOSHIBA

东芝

Silicon P Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件:158.24 Kbytes Page:3 Pages

TOSHIBA

东芝

Chopper Regulator, DC?묭C Converter and Motor Drive

文件:142.97 Kbytes Page:3 Pages

TOSHIBA

东芝

isc P-Channel MOSFET Transistor

文件:298.69 Kbytes Page:2 Pages

ISC

无锡固电

P-Channel 60-V (D-S) MOSFET

文件:1.58356 Mbytes Page:7 Pages

VBSEMI

微碧半导体

Power MOSFETs

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:110.36 Kbytes Page:10 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:113.42 Kbytes Page:11 Pages

RENESAS

瑞萨

P-Channel 60-V (D-S) MOSFET

文件:988.52 Kbytes Page:8 Pages

VBSEMI

微碧半导体

Silicon P Channel MOS FET

文件:114.42 Kbytes Page:11 Pages

RENESAS

瑞萨

P-Channel 4 0 V (D-S) MOSFET

文件:976.3 Kbytes Page:7 Pages

VBSEMI

微碧半导体

Silicon P Channel MOS FET

文件:114.08 Kbytes Page:11 Pages

RENESAS

瑞萨

P-Channel 4 0 V (D-S) MOSFET

文件:976.27 Kbytes Page:7 Pages

VBSEMI

微碧半导体

丝印代码:DPAK;isc P-Channel MOSFET Transistor

文件:324.57 Kbytes Page:2 Pages

ISC

无锡固电

P-Channel 60-V (D-S) MOSFET

文件:988.31 Kbytes Page:8 Pages

VBSEMI

微碧半导体

P-Channel 60-V (D-S) MOSFET

文件:988.34 Kbytes Page:8 Pages

VBSEMI

微碧半导体

2SJ52产品属性

  • 类型

    描述

  • Product Category:

    Power MOSFET (P-ch single)

  • Package name(Toshiba):

    TPS

更新时间:2026-5-25 11:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENES
23+
TO-251
7500
原厂授权代理,海外优势订货渠道。可提供大量库存,详
RENESAS/瑞萨
23+
TO-251
50000
全新原装正品现货,支持订货
RENESAS
25+23+
TO251
72541
绝对原装正品现货,全新深圳原装进口现货
RENESAS
25+
TO-251
66880
原装正品,欢迎询价
NEC
26+
ZIP
86720
全新原装正品价格最实惠 假一赔百
RENESAS
22+
TO-251
20000
公司只有原装 品质保证
RENESAS
25+
TO-252
9000
只做原装正品 有挂有货 假一赔十
RENESAS
24+
TO-252
16900
原装正品现货支持实单
RENESAS
26+
TO-252
360000
进口原装现货
RENESAS
23+
TO-251
6082
原厂原装正品

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