2SJ52价格

参考价格:¥0.8450

型号:2SJ520 品牌:SANYO 备注:这里有2SJ52多少钱,2024年最近7天走势,今日出价,今日竞价,2SJ52批发/采购报价,2SJ52行情走势销售排行榜,2SJ52报价。
型号 功能描述 生产厂家&企业 LOGO 操作

LoadSwitchingApplications

LoadSwitchingApplications Features ·LowONresistance. ·2.5Vdrive.

SANYOSanyo

三洋三洋电机株式会社

SANYO

Ultrahigh-SpeedSwitchingApplications

Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance.

SANYOSanyo

三洋三洋电机株式会社

SANYO

PCHANNELNOSTYPE(HIGHSPEED,HIGHCURRENTSWITCHING,CHOPPERREGULATOR,DC-DCCONVERTERANDMOTORDRIVEAPPLICATIONS)

ChopperRegulator,DC−DCConverterandMotorDriveApplications ●4-Vgatedrive ●Lowdrain−sourceONresistance:RDS(ON)=0.1Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=4.5S(typ.) ●Lowleakagecurrent:IDSS=−100μA(max)(VDS=−30V) ●Enhancementmode:Vth=−0.8to−

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.11Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=0.11Ωtyp. •Lowdrivecurrent •4Vgetedrivedevices •Highspeedswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.11Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgetedrivedevices •Highspeedswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgetedrivedevices •Highspeedswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HightSpeedPowerSwitching

HightSpeedPowerSwitching Features Lowon-resistance RDS(on)=0.3typ. Lowdrivecurrent Highspeedswitching 4Vgatedrivedevices.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFETHighSpeedPowerSwitching

SiliconPChannelMOSFETHighSpeedPowerSwitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgetedrivedevices •Highspeedswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.3Ωtyp. •Lowdrivecurrent •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.17Ωtyp. •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=0.17Ωtyp. •4Vgetedrivedevices •Highspeedswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.17Ωtyp. •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=0.17Ωtyp. •4Vgetedrivedevices •Highspeedswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.17Ωtyp. •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.17Ωtyp. •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HightSpeedPowerSwitching

Features •Lowon-resistance •RDS(on)=0.17typ. •Highspeedswitching •4Vgatedrivedevices.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistanceRDS(on)=0.17Ωtyp. •4Vgetedrivedevices •Highspeedswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.17Ωtyp. •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=0.12Ωtyp. •4Vgetedrivedevices •Highspeedswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.12Ωtyp. •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=0.12Ωtyp. •4Vgetedrivedevices •Highspeedswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.12Ωtyp. •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.12Ωtyp. •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.12Ωtyp. •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

HightSpeedPowerSwitching

Features Lowon-resistance RDS(on)=0.12typ. Highspeedswitching 4Vgatedrivedevices.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SiliconPChannelMOSFETHighSpeedPowerSwitching

Features •Lowon-resistance RDS(on)=0.12Ωtyp. •4Vgetedrivedevices •Highspeedswitching

HitachiHitachi, Ltd.

日立公司

Hitachi

SiliconPChannelMOSFET

Description Highspeedpowerswitching Features •Lowon-resistance RDS(on)=0.12Ωtyp. •4Vgatedrivedevices •Highspeedswitching

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

P-Channel30-V(D-S)MOSFET

文件:1.01637 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

ChopperRegulator,DC?묭CConverterandMotorDrive

文件:142.97 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconPChannelMOSTypeChopperRegulator,DC−DCConverterandMotorDriveApplications

文件:158.24 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconPChannelMOSTypeChopperRegulator,DC−DCConverterandMotorDriveApplications

文件:158.24 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

ChopperRegulator,DC?묭CConverterandMotorDrive

文件:142.97 Kbytes Page:3 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

iscP-ChannelMOSFETTransistor

文件:298.69 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

P-Channel60-V(D-S)MOSFET

文件:1.58356 Mbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SiliconPChannelMOSFET

文件:110.36 Kbytes Page:10 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SiliconPChannelMOSFET

文件:113.42 Kbytes Page:11 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

P-Channel60-V(D-S)MOSFET

文件:988.52 Kbytes Page:8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SiliconPChannelMOSFET

文件:114.42 Kbytes Page:11 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

P-Channel40V(D-S)MOSFET

文件:976.3 Kbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

SiliconPChannelMOSFET

文件:114.08 Kbytes Page:11 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

P-Channel40V(D-S)MOSFET

文件:976.27 Kbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

iscP-ChannelMOSFETTransistor

文件:324.57 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

P-Channel60-V(D-S)MOSFET

文件:988.31 Kbytes Page:8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

P-Channel60-V(D-S)MOSFET

文件:988.34 Kbytes Page:8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

2SJ52产品属性

  • 类型

    描述

  • 型号

    2SJ52

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    Load Switching Applications

更新时间:2024-6-18 17:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANYO
21+
TO-252
35200
一级代理/放心采购
SANYO
2023+
TO-252
50000
原装现货
VBSEMI台湾微碧
23+
TO-252
22820
原装正品,支持实单
Sanyo
22+23+
To-252
29058
绝对原装正品全新进口深圳现货
SANYO/三洋
23+
NA/
3570
原装现货,当天可交货,原型号开票
SANYO
22+
SOT-252
6300
SANYO
2008++
TO-252
8768
新进库存/原装
SANYO/三洋
TO252
7906200
SANYO-三洋
24+25+/26+27+
TO-252-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
VBsemi
24+
TO252
9000
只做原装正品 有挂有货 假一赔十

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