位置：首页 > IC中文资料第8122页 > 2SJ528
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ528 | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SJ528 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | |
2SJ528 | Silicon P Channel MOS FET High Speed Power Switching | HitachiHitachi Semiconductor 日立日立公司 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Hight Speed Power Switching Features • Low on-resistance • RDS(on) = 0.17 typ. • High speed switching • 4V gate drive devices. | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET 文件：114.42 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
P-Channel 4 0 V (D-S) MOSFET 文件：976.3 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFETs | RENESAS 瑞萨 | |
2SJ528产品属性
- 类型
描述
- 型号
2SJ528
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon P Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
24+ |
TO-252 |
35000 |
绝对原装正品现货假一罚十 |
|||
VB |
2024 |
TO-251 |
13500 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
TOSHIBA |
24+ |
60000 |
|||||
RENESAS |
24+ |
TO-251 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
HITACHI/日立 |
23+ |
TO-252 |
7000 |
||||
RENESAS/瑞萨 |
24+ |
TO-252 |
16900 |
原装正品现货支持实单 |
|||
RENESAS/瑞萨 |
25+ |
TO-252 |
32360 |
RENESAS/瑞萨全新特价2SJ528STR0T-E即刻询购立享优惠#长期有货 |
|||
RENESAS/瑞萨 |
14+ |
TO-252 |
7673 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HITACHI/日立 |
2022+ |
TO-252 |
10600 |
原厂代理 终端免费提供样品 |
2SJ528规格书下载地址
2SJ528参数引脚图相关
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- 2SJ528(L)|2SJ528(S)
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2SJ528数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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