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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ528 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 |   | |
2SJ528 | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | |
2SJ528 | Silicon P Channel MOS FET High Speed Power Switching | HITACHIHitachi Semiconductor 日立日立公司 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Hight Speed Power Switching Features • Low on-resistance • RDS(on) = 0.17 typ. • High speed switching • 4V gate drive devices. | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET 文件：114.42 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
P-Channel 4 0 V (D-S) MOSFET 文件：976.3 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | |
2SJ528产品属性
- 类型
描述
- 型号
2SJ528
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon P Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
22+ |
TO-252 |
28800 |
原装正品支持实单 |
|||
RENESAS/瑞萨 |
新年份 |
TO252 |
69850 |
一级代理原装正品现货,支持实单! |
|||
RENESAS |
24+ |
TO-252 |
35000 |
绝对原装正品现货假一罚十 |
|||
RENESAS |
25+ |
203 |
原厂原装,价格优势 |
||||
RENESAS |
26+ |
TO-251 |
360000 |
进口原装现货 |
|||
TOSHIBA |
24+ |
60000 |
|||||
RENESAS/瑞萨 |
2450+ |
TO252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
RENESAS |
24+ |
TO-251 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
HITACHI |
24+ |
TO-252 |
4200 |
只做原装正品现货 欢迎来电查询15919825718 |
2SJ528芯片相关品牌
2SJ528规格书下载地址
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2SJ528数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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