| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ528 | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ528 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | |
2SJ528 | Silicon P Channel MOS FET High Speed Power Switching | HITACHIHitachi Semiconductor 日立日立公司 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.17 Ω typ. • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Hight Speed Power Switching Features • Low on-resistance • RDS(on) = 0.17 typ. • High speed switching • 4V gate drive devices. | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.17 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET 文件：114.42 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
P-Channel 4 0 V (D-S) MOSFET 文件：976.3 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFETs | RENESAS 瑞萨 | |
2SJ528产品属性
- 类型
描述
- 封装类型：
DPAK(L)-(2)/TO-251
- Nch/Pch：
Pch
- 通道数：
Single
- VDSS (V) 最大值：
-60
- ID (A)：
-7
- RDS (ON)(mΩ) 最大值@4V或4.5V：
370
- RDS (ON)(mΩ) 最大值@10V或8V：
220
- Ciss (pF) 典型值：
400
- Vgs (off) (V) 最大值：
-2
- VGSS (V)：
20
- Pch (W)：
20
- 应用：
Industrial
- 安装类型：
Through Hole
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
24+ |
60000 |
|||||
RENESAS/瑞萨 |
新年份 |
TO252 |
69850 |
一级代理原装正品现货,支持实单! |
|||
RENESAS |
25+ |
TO-251 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS |
23+ |
TO-252 |
558 |
全新 发货1-2天 |
|||
RENESAS/瑞萨 |
24+ |
TO252 |
27950 |
郑重承诺只做原装进口现货 |
|||
RENESAS/瑞萨 |
22+ |
TO-252 |
20000 |
公司只有原装 品质保证 |
|||
HITACHI |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
RENESAS/瑞萨 |
25+ |
TO-252 |
32360 |
RENESAS/瑞萨全新特价2SJ528STR0T-E即刻询购立享优惠#长期有货 |
|||
RENESAS/瑞萨 |
25+ |
TO-252 |
20000 |
原装 |
|||
RENESAS |
2023+ |
null |
5911 |
专注配单,只做原装进口现货 |
2SJ528规格书下载地址
2SJ528参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
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- 2SJ533
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- 2SJ531
- 2SJ530S
- 2SJ530L
- 2SJ530
- 2SJ529STR-E
- 2SJ529STL-E
- 2SJ529S-E
- 2SJ529S
- 2SJ529L-E
- 2SJ529L
- 2SJ529(S)
- 2SJ529(L)|2SJ529(S)
- 2SJ529(L)
- 2SJ529
- 2SJ528STL-E
- 2SJ528S-E
- 2SJ528S(TL-E)
- 2SJ528S
- 2SJ528L-E
- 2SJ528-L(E)
- 2SJ528L
- 2SJ528(L)|2SJ528(S)
- 2SJ527STR-E
- 2SJ527STL-E
- 2SJ527S-E
- 2SJ527S
- 2SJ527L-E
- 2SJ527-L(E)
- 2SJ527L
- 2SJ527
- 2SJ526-E
- 2SJ526
- 2SJ525_09
- 2SJ525_06
- 2SJ525
- 2SJ522
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- 2SJ518AZTR-E
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- 2SJ517YYTR-E
- 2SJ517
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- 2SJ512
- 2SJ511
- 2SJ509
- 2SJ508
- 2SJ507
- 2SJ506S
- 2SJ506L
- 2SJ506
- 2SJ505S
- 2SJ505L
2SJ528数据表相关新闻
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2SJ652-1E 原装正品 现货供应
2024-3-232SD669AL-TO92NLB-C-TG_UTC代理商
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2SD669AL-TO126T-D-TG_UTC代理商
2023-2-22SK1485-T1
2SK1485-T1，当天发货0755-82732291全新原装现货或门市自取.
2020-9-122SK1985
2SK1985，全新原装当天发货或门市自取0755-82732291.
2019-10-30
DdatasheetPDF页码索引
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