位置：首页 > IC中文资料第5644页 > 2SJ526
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ526 | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SJ526 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | |
2SJ526 | isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID=-12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= -10V DESCRIPTION · High fast switching Power Supply | ISC 无锡固电 | | |
2SJ526 | Power MOSFETs | RENESAS 瑞萨 | | |
2SJ526 | isc P-Channel MOSFET Transistor 文件：298.69 Kbytes Page：2 Pages | ISC 无锡固电 | | |
2SJ526 | P-Channel 60-V (D-S) MOSFET 文件：1.58356 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：110.36 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SJ526产品属性
- 类型
描述
- 型号
2SJ526
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon P Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
VBsemi |
24+ |
TO220F |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS/瑞萨 |
24+ |
TO-220 |
60000 |
||||
VBSEMI |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
RENESAS/瑞萨 |
25+ |
TO-251 |
8800 |
公司只做原装,详情请咨询 |
|||
RENESAS/瑞萨 |
24+ |
TO-251 |
16900 |
原装正品现货支持实单 |
|||
RENESAS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
恩XP |
24+ |
SOT-23 |
10000 |
专做原装现货 假一赔百ai |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
2SJ526规格书下载地址
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2019-10-30
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