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2SJ529价格
参考价格：￥0.8450
型号：2SJ529STL 品牌：HITACHI 备注：这里有2SJ529多少钱，2025年最近7天走势，今日出价，今日竞价，2SJ529批发/采购报价，2SJ529行情走势销售排行榜，2SJ529报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ529 | Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SJ529 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | |
2SJ529 | Silicon P Channel MOS FET High Speed Power Switching | HitachiHitachi Semiconductor 日立日立公司 | | |
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Hight Speed Power Switching Features Low on-resistance RDS(on) = 0.12 typ. High speed switching 4V gate drive devices. | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P-Channel MOS FET | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET 文件：114.08 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
P-Channel 4 0 V (D-S) MOSFET 文件：976.27 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
isc P-Channel MOSFET Transistor 文件：324.57 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
P-Channel 60-V (D-S) MOSFET 文件：988.31 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
P-Channel 60-V (D-S) MOSFET 文件：988.34 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | |
2SJ529产品属性
- 类型
描述
- 型号
2SJ529
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
3261 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
RENESAS/瑞萨 |
22+ |
TO-251 |
100000 |
代理渠道/只做原装/可含税 |
|||
HITACHI/日立 |
24+ |
TO 220 |
158130 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
24+ |
TO-252 |
35000 |
绝对原装正品现货假一罚十 |
|||
VB |
2024 |
TO-251 |
13500 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
RENESAS |
25+23+ |
TO-252 |
41682 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS/瑞萨 |
24+ |
TO-252 |
2800 |
只做原厂渠道 可追溯货源 |
|||
TOSHIBA |
24+ |
66000 |
|||||
RENESAS |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
2SJ529规格书下载地址
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2019-10-30
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