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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ526-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID=-12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= -10V DESCRIPTION · High fast switching Power Supply | ISC 无锡固电 | | ||
P-Channel 60-V (D-S) MOSFET 文件：1.58356 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
isc P-Channel MOSFET Transistor 文件：298.69 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SJ526-E产品属性
- 类型
描述
- 型号
2SJ526-E
- 制造商
Renesas Electronics
- 功能描述
Tray
- 制造商
Renesas Electronics Corporation
- 功能描述
Pch MOSFET,60V,12A,0.11ohm,TO-220FM
- 制造商
Renesas
- 功能描述
Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) TO-220FM Box
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
2511 |
TO-251 |
1218 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS |
20+ |
TO-251 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
VBsemi |
24+ |
TO251 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS/瑞萨 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS瑞萨/HITACHI日立 |
24+ |
TO-252 |
8658 |
新进库存/原装 |
|||
HITACHI |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
HITACHI |
24+ |
5000 |
全现原装公司现货 |
||||
HITACHI |
TO-251DPAK(L) |
22+ |
6000 |
十年配单,只做原装 |
|||
HITACHI |
24+ |
TO-252 |
6300 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
RENESAS |
23+ |
NA |
630 |
专做原装正品,假一罚百! |
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2SJ526-E规格书下载地址
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2019-10-30
DdatasheetPDF页码索引
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