位置：首页 > IC中文资料第1934页 > 2SJ526-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ526-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
isc P-Channel MOSFET Transistor 文件：298.69 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
P-Channel 60-V (D-S) MOSFET 文件：1.58356 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | |
2SJ526-E产品属性
- 类型
描述
- 型号
2SJ526-E
- 制造商
Renesas Electronics
- 功能描述
Tray
- 制造商
Renesas Electronics Corporation
- 功能描述
Pch MOSFET,60V,12A,0.11ohm,TO-220FM
- 制造商
Renesas
- 功能描述
Trans MOSFET P-CH 60V 12A 3-Pin(3+Tab) TO-220FM Box
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Panasonic |
20+ |
SOT323 |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
PANASONIC/松下 |
23+ |
SOT-323 |
50000 |
原装正品 支持实单 |
|||
24+/25+ |
3000 |
原装正品现货库存价优 |
|||||
RENESAS |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
RENESAS |
23+ |
NA |
630 |
专做原装正品,假一罚百! |
|||
PANASONIC/松下 |
2450+ |
S3-G1 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
Panasonic-SSG |
24+ |
Mini3P |
7500 |
||||
PANASONIC/松下 |
22+ |
SOT-323 |
20000 |
只做原装 |
|||
SING |
25+ |
100 |
公司优势库存 热卖中! |
||||
PANASONIC/松下 |
22+ |
SOT323 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
2SJ526-E规格书下载地址
2SJ526-E参数引脚图相关
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- 2SJ527S
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- 2SJ527-L(E)
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- 2SJ518
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- 2SJ517YYTL-E
- 2SJ517YYTL
- 2SJ517
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- 2SJ516
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- 2SJ512(F)
- 2SJ512
- 2SJ511
- 2SJ509
- 2SJ508
- 2SJ507
- 2SJ506S
- 2SJ506L
- 2SJ506
- 2SJ505S
- 2SJ505L
- 2SJ505
- 2SJ504
- 2SJ503
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2019-10-30
DdatasheetPDF页码索引
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