位置：首页 > IC中文资料 > 2SJ527(L)_15
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ527(L)_15 | Silicon P Channel MOS FET 文件：113.42 Kbytes Page：11 Pages | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
20+ |
TO-251 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS/瑞萨 |
2511 |
TO-252 |
1800 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
VBsemi |
24+ |
TO251 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS |
12+ |
TO-251 |
1718 |
发货1-2天 |
|||
NEC |
26+ |
ZIP |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS |
25+ |
TO-252 |
76000 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
RENESAS/瑞萨 |
22+ |
TO-252 |
20000 |
公司只有原装 品质保证 |
|||
RENESAS/瑞萨 |
24+ |
TO-252 |
16900 |
原装正品现货支持实单 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ON |
24+ |
SOT23 |
10000 |
专做原装现货 假一赔百ai |
2SJ527(L)_15芯片相关品牌
2SJ527(L)_15规格书下载地址
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2SJ527(L)_15数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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