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型号 功能描述 生产厂家 企业 LOGO 操作
2SJ529L-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

2SJ529L-E产品属性

  • 类型

    描述

  • 型号

    2SJ529L-E

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) DPAK(L)-(2) T/R

更新时间:2026-3-18 20:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
20+
TO-252
36900
原装优势主营型号-可开原型号增税票
RNESASA
08+
TO-251
1228
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
24+
TO-252
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
RENES
23+
TO-251
7500
原厂授权代理,海外优势订货渠道。可提供大量库存,详
RENES
26+
TO-251
360000
进口原装现货
RENESAS
25+23+
TO251
72541
绝对原装正品现货,全新深圳原装进口现货
RENESAS/瑞萨
2223+
TO-252
26800
只做原装正品假一赔十为客户做到零风险
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
22+
TO-251
20000
公司只有原装 品质保证
RENESAS瑞萨/HITACHI日立
24+
TO-252
6550
新进库存/原装

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