位置：首页 > IC中文资料第2089页 > 2SJ529L-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ529L-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12 Ω typ. • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.12 Ω typ. • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：114.08 Kbytes Page：11 Pages | RENESAS 瑞萨 | |
2SJ529L-E产品属性
- 类型
描述
- 型号
2SJ529L-E
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) DPAK(L)-(2) T/R
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
24+ |
TO-252 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
RENESAS |
25+23+ |
TO251 |
72541 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
RENES |
26+ |
TO-251 |
360000 |
进口原装现货 |
|||
RENESAS/瑞萨 |
2223+ |
TO-252 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
RENESAS瑞萨/HITACHI日立 |
24+ |
TO-252 |
6550 |
新进库存/原装 |
|||
RENESAS |
19+ |
TO-252 |
13467 |
||||
RENESAS |
17+ |
TO-252 |
6200 |
100%原装正品现货 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
Renesas(瑞萨) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
RENESAS |
22+ |
TO-251 |
20000 |
公司只有原装 品质保证 |
2SJ529L-E芯片相关品牌
2SJ529L-E规格书下载地址
2SJ529L-E参数引脚图相关
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2SJ529L-E数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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