型号 功能描述 生产厂家 企业 LOGO 操作
2SJ527L

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching

HitachiHitachi Semiconductor

日立日立公司

2SJ527L

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

2SJ527L

Power MOSFETs

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:113.42 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ527L产品属性

  • 类型

    描述

  • 型号

    2SJ527L

  • 制造商

    Renesas Electronics

  • 功能描述

    Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Box

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    P-channel MOSFET, 60V,5A,3ohm,DPAK-L

更新时间:2025-12-2 11:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
2511
TO-252
10
电子元器件采购降本30%!原厂直采,砍掉中间差价
RENESAS
25+23+
TO252
33358
绝对原装正品全新进口深圳现货
VBSEMI/台湾微碧
23+
TO251
50000
全新原装正品现货,支持订货
RENESAS
ROHS+Original
NA
2198
专业电子元器件供应链/QQ 350053121 /正纳电子
VBsemi
24+
TO251
9000
只做原装正品 有挂有货 假一赔十
RENESAS
24+
TO-252
5000
只做原装公司现货
RENESAS/瑞萨
2022+
TO-251
50000
原厂代理 终端免费提供样品
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
23+
TO-252
10
全新原装正品现货,支持订货
NK/南科功率
2025+
TO-263
986966
国产

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