型号 功能描述 生产厂家 企业 LOGO 操作
2SJ527L-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:113.42 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ527L-E产品属性

  • 类型

    描述

  • 型号

    2SJ527L-E

  • 制造商

    Renesas Electronics

  • 功能描述

    Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Box

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    P-channel MOSFET, 60V,5A,3ohm,DPAK-L

更新时间:2026-3-3 8:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
2023+
TO-251
8800
正品渠道现货 终端可提供BOM表配单。
RENESAS
21+
TO252
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
20+
TO-252
38900
原装优势主营型号-可开原型号增税票
RENESAS
25+
62
公司现货库存
RENESAS
25+23+
TO252
33358
绝对原装正品全新进口深圳现货
RENESAS/瑞萨
新年份
TO-252
33288
原装正品现货,实单带TP来谈!
RENESAS
24+
TO-251
9000
只做原装正品 有挂有货 假一赔十
RENESAS
12+
TO-251
1718
NEC
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
RENESAS
2511
TO-251
10
电子元器件采购降本30%!原厂直采,砍掉中间差价

2SJ527L-E数据表相关新闻