型号 功能描述 生产厂家 企业 LOGO 操作
2SJ527L-E

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET High Speed Power Switching

Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

RENESAS

瑞萨

Silicon P Channel MOS FET

文件:113.42 Kbytes Page:11 Pages

RENESAS

瑞萨

2SJ527L-E产品属性

  • 类型

    描述

  • 型号

    2SJ527L-E

  • 制造商

    Renesas Electronics

  • 功能描述

    Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Box

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    P-channel MOSFET, 60V,5A,3ohm,DPAK-L

更新时间:2025-11-30 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
1710
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS
25+23+
TO252
33358
绝对原装正品全新进口深圳现货
RENESAS
24+
TO-251
9000
只做原装正品 有挂有货 假一赔十
RENESAS
25+
62
公司现货库存
RENESAS
23+
null
7000
RENESAS/瑞萨
2447
SOT252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
RENESAS
24+
TO-251
16900
原装正品现货支持实单
RENESAS
20+
TO-252
38900
原装优势主营型号-可开原型号增税票
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
21+
TO252
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力

2SJ527L-E数据表相关新闻