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2SJ527价格
参考价格：￥0.8450
型号：2SJ527STR 品牌：HITACHI 备注：这里有2SJ527多少钱，2025年最近7天走势，今日出价，今日竞价，2SJ527批发/采购报价，2SJ527行情走势销售排行榜，2SJ527报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ527 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 |   | |
2SJ527 | Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | |
2SJ527 | Silicon P Channel MOS FET High Speed Power Switching | HitachiHitachi Semiconductor 日立日立公司 | | |
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Hight Speed Power Switching Hight Speed Power Switching Features Low on-resistance RDS(on)=0.3 typ. Low drive current High speed switching 4V gate drive devices. | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：113.42 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
Power switching MOSFET | HitachiHitachi Semiconductor 日立日立公司 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
P-Channel 60-V (D-S) MOSFET 文件：988.52 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | |
2SJ527产品属性
- 类型
描述
- 型号
2SJ527
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
TO-251 |
1218 |
全新原装正品现货,支持订货 |
|||
RENESAS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
RENESAS/瑞萨 |
2511 |
TO-251 |
1218 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
VBsemi |
24+ |
TO251 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS/瑞萨 |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS |
24+ |
TO-252 |
35000 |
绝对原装正品现货假一罚十 |
|||
RENESAS瑞萨/HITACHI日立 |
24+ |
TO-252 |
8658 |
新进库存/原装 |
|||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
11048 |
支持大陆交货,美金交易。原装现货库存。 |
|||
HITACHI |
24+ |
TO-252 |
6300 |
只做原装正品现货 欢迎来电查询15919825718 |
2SJ527规格书下载地址
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