2SJ527价格
参考价格：￥0.8450
型号：2SJ527STR 品牌：HITACHI 备注：这里有2SJ527多少钱，2026年最近7天走势，今日出价，今日竞价，2SJ527批发/采购报价，2SJ527行情走势销售排行榜，2SJ527报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ527 | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 |   | |
2SJ527 | Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | |
2SJ527 | Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching • Low on-resistance\n RDS(on)= 0.3 Ωtyp.\n• Low drive current\n• 4 V gete drive devices\n• High speed switching; | HITACHIHitachi Semiconductor 日立日立公司 | | |
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Hight Speed Power Switching Hight Speed Power Switching Features Low on-resistance RDS(on)=0.3 typ. Low drive current High speed switching 4V gate drive devices. | KEXIN 科信电子 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：113.42 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
Power switching MOSFET | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
P-Channel 60-V (D-S) MOSFET 文件：988.52 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | |
2SJ527产品属性
- 类型
描述
- 封装类型：
DPAK(L)-(1)/TO-251
- Nch/Pch：
Pch
- 通道数：
Single
- VDSS (V) 最大值：
-60
- ID (A)：
-5
- RDS (ON)(mΩ) 最大值@4V或4.5V：
800
- RDS (ON)(mΩ) 最大值@10V或8V：
400
- Ciss (pF) 典型值：
220
- Vgs (off) (V) 最大值：
-2
- VGSS (V)：
20
- Pch (W)：
20
- 应用：
Industrial
- 安装类型：
Through Hole
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
24+ |
标准封装 |
11048 |
支持大陆交货,美金交易。原装现货库存。 |
|||
RENESAS |
23+ |
SOT252 |
20000 |
全新原装假一赔十 |
|||
RENESAS |
24+ |
TO252 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
原装 |
25+ |
TO-252 |
20300 |
原装特价2SJ527STR-E即刻询购立享优惠#长期有货 |
|||
RENESAS/瑞萨 |
0734+ |
TO-252 |
1558 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HITACHI |
24+ |
TO252 |
8540 |
只做原装正品现货或订货假一赔十! |
|||
RENESAS |
03+ |
SOT252 |
4370 |
全新原装进口自己库存优势 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
25+ |
1300 |
公司现货库存 |
||||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
2SJ527芯片相关品牌
2SJ527规格书下载地址
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DdatasheetPDF页码索引
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