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2SD21晶体管资料

2SD21别名：2SD21三极管、2SD21晶体管、2SD21晶体三极管
2SD21生产厂家：日本日电公司
2SD21制作材料：Ge-NPN
2SD21性质：低频或音频放大（LF）_TR_输出极（E）
2SD21封装形式：直插封装
2SD21极限工作电压：25V
2SD21最大电流允许值：0.3A
2SD21最大工作频率：<1MHZ或未知
2SD21引脚数：3
2SD21最大耗散功率：0.15W
2SD21放大倍数：β=72
2SD21图片代号：D-9
2SD21vtest：25
2SD21htest：999900
2SD21atest：0.3
2SD21wtest：0.15

2SD21代换 2SD21用什么型号代替：AC127,AC176,AC187,2N1302,2SD72,2SD352,3BX81B,

2SD21价格

参考价格：￥0.3857

型号：2SD2114KT146V 品牌：Rohm 备注：这里有2SD21多少钱，2025年最近7天走势，今日出价，今日竞价，2SD21批发/采购报价，2SD21行情走势销售排行榜，2SD21报价。

型号	功能描述	生产厂家企业	LOGO
2SD2100	Compact Motor Driver Applications??? Features • Low saturation voltage. • Contains diode between collector and emitter. • Contains bias resistance between base and emitter. • Large current capacity. • Small-sized package making it easy to provide high density, small-sized hybrid ICs.	SANYO 三洋	SANYO
2SD2101	Silicon NPN Triple Diffused Application Low frequency power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SD2101	Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • DARLINGTON APPLICATIONS • Low frequency power amplifier	SAVANTIC	SAVANTIC
2SD2101	Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • DARLINGTON APPLICATIONS • Low frequency power amplifier	JMNIC 锦美电子	JMNIC
2SD2101	Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • DARLINGTON APPLICATIONS • Low frequency power amplifier	ISC 无锡固电	ISC
2SD2101	Silicon NPN Triple Diffused Application Low frequency power amplifier	RENESAS 瑞萨	RENESAS
2SD2102	SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMFPLIFIER D2102 Hitachi 2SD2102 Datasheet PDF	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SD2103	Silicon NPN Triple Diffused Application Low frequency power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SD2104	Silicon NPN Triple Diffused Application Low frequency power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SD2104	isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A • High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V APPLICATIONS • Designed for low frequency power amplifier applications	ISC 无锡固电	ISC
2SD2105	isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 5A • High DC Current Gain : hFE= 1000(Min) @ IC= 5A, VCE= 3V APPLICATIONS • Designed for low frequency power amplifier applications	ISC 无锡固电	ISC
2SD2106	isc Silicon NPN Darlington Power Transistor Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V APPLICATIONS ·Design	ISC 无锡固电	ISC
2SD2106	Silicon NPN Epitaxial Silicon NPN Epitaxial Application Low frequency power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SD2106	Silicon NPN Epitaxial Silicon NPN Epitaxial Application Low frequency power amplifier	RENESAS 瑞萨	RENESAS
2SD2107	Silicon NPN Triple Diffused Applications Low frequency power amplifier	RENESAS 瑞萨	RENESAS
2SD2108	SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SD2108	isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A • High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V APPLICATIONS • Designed for low frequency power amplifier applications	ISC 无锡固电	ISC
2SD211	Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Large current capability ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications	ISC 无锡固电	ISC
2SD211	Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Large current capability ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications	SAVANTIC	SAVANTIC
2SD2110	isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A • High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V APPLICATIONS • Designed for low frequency power amplifier applications	ISC 无锡固电	ISC
2SD2111	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1.5A, VCE= 3V APPLICATIONS ·Designed for low frequency poweramplifier applications	ISC 无锡固电	ISC
2SD2112	isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A • High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V APPLICATIONS • Designed for low frequency power amplifier applications	ISC 无锡固电	ISC
2SD2113	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain: hFE= 1000(Min) @ IC= 1.5A, VCE= 3V APPLICATIONS ·Designed for low frequency poweramplifier applications	ISC 无锡固电	ISC
2SD2114	NPN Plastic Encapsulated Transistor FEATURE • High DC Current Gain. • High Emitter-Base Voltage. VEBO=12V (Min.)	SECOS 喜可士	SECOS
2SD2114	TRANSISTOR (NPN) FEATURES • High DC current gain. • High emitter-base voltage. • Low VCE (sat).	HTSEMI 金誉半导体	HTSEMI
2SD2114	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES • High DC current gain. • High emitter-base voltage. • Low VCE (sat).	JIANGSU 长电科技	JIANGSU
2SD2114K	Power Transistor Features High DC current gain. High emitter-base voltage. Low VCE (sat).	KEXIN 科信电子	KEXIN
2SD2114K	High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114K	High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE= 1200 (Typ.) 2) High emitter-base voltage. VEBO=12V (Min.) 3) Low VCE (sat). VCE (sat)= 0.18V (Typ.) (IC/ IB= 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
2SD2114K	High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114KS	High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE= 1200 (Typ.) 2) High emitter-base voltage. VEBO=12V (Min.) 3) Low VCE (sat). VCE (sat)= 0.18V (Typ.) (IC/ IB= 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
2SD2114KT146V	High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114KT146W	High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114KU	High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114KV	High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114KW	High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2115	Power Bipolar Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SD2115	Silicon NPN Epitaxial Planar(Low frequency power amplifier) Application Low frequency power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SD2115	Silicon NPN Epitaxial Planar Application Low frequency power amplifier	RENESAS 瑞萨	RENESAS
2SD2115	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 150(Min)@ IC= 1.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD2115	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 150(Min)@ IC= 1.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD2115-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 150(Min)@ IC= 1.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD2115-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 150(Min)@ IC= 1.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD2115L	Silicon NPN Epitaxial Planar Application Low frequency power amplifier	RENESAS 瑞萨	RENESAS
2SD2115L	Silicon NPN Epitaxial Planar(Low frequency power amplifier) Application Low frequency power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SD2115S	Silicon NPN Epitaxial Planar(Low frequency power amplifier) Application Low frequency power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SD2115S	Silicon NPN Epitaxial Features ● Low frequency power amplifier.	KEXIN 科信电子	KEXIN
2SD2115S	Silicon NPN Epitaxial Planar Application Low frequency power amplifier	RENESAS 瑞萨	RENESAS
2SD2116	General Driver Applications??????? General Driver Applications Features • Darlington connection. • High DC current gain. • Large current capacity, wide ASO.	SANYO 三洋	SANYO
2SD2117	General Driver Applications????????? General Driver Applications Features • Darlington connection. • High DC current gain. • Large current capacity, wide ASO.	SANYO 三洋	SANYO
2SD2118	Low VCE(sat) Transistor(Strobe flash) Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
2SD2118	NPN Silicon General Purpose Transistor FEATURES Low VCE(sat). VCE(sat)= 0.25V(Typ.) (IC/IB= 4A / 0.1A) Excellent DC Current Gain Characteristics	SECOS 喜可士	SECOS
2SD2118	Low VCE(sat) Transistor Features Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor.	KEXIN 科信电子	KEXIN
2SD2118	Silicon NPN Power Transistor FEATURES · High current capacity · Low collector-to-emitter saturation voltage · Fast switching speed APPLICATIONS ·Strobes,voltage regulators,relay drivers,lamp drivers	ISC 无锡固电	ISC
2SD2118	Silicon NPN Power Transistor FEATURES · High current capacity · Low collector-to-emitter saturation voltage · Fast switching speed APPLICATIONS ·Strobes,voltage regulators,relay drivers,lamp drivers	ISC 无锡固电	ISC
2SD2118-251	Silicon NPN Power Transistor FEATURES · High current capacity · Low collector-to-emitter saturation voltage · Fast switching speed APPLICATIONS ·Strobes,voltage regulators,relay drivers,lamp drivers	ISC 无锡固电	ISC
2SD2118-252	Silicon NPN Power Transistor FEATURES · High current capacity · Low collector-to-emitter saturation voltage · Fast switching speed APPLICATIONS ·Strobes,voltage regulators,relay drivers,lamp drivers	ISC 无锡固电	ISC
2SD2118TLQ	Low VCE(sat) Transistor(Strobe flash) Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
2SD2118TLR	Low VCE(sat) Transistor(Strobe flash) Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
2SD2120	General Driver Applications????????? General Driver Applications * Darlington connection ( Contains bias resistance, damper diode) * High DC current gain * Less dependence of DC current gain on temperature	SANYO 三洋	SANYO

2SD21产品属性

类型
描述
型号
2SD21
制造商
SANYO
制造商全称
Sanyo Semicon Device
功能描述
Compact Motor Driver Applications

2SD21供应商更多...

更新时间：2025-12-24 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SD2185	PANASON/松下	24+	NA/	5050	原装现货,当天可交货,原型号开票	询价
深圳市金芯世纪电子有限公司	2SD2178	PANASONIC/松下	22+	MT-3-A1	100000	代理渠道/只做原装/可含税	询价
深圳市科芯源微电子有限公司	2SD2185	PANASONIC/松下	25+	SOT-89	54648	百分百原装现货实单必成	询价
中天科工半导体（深圳）有限公司	2SD218	NEC	专业铁帽	TO-3	67500	铁帽原装主营-可开原型号增税票	询价
深圳市拓亿芯电子有限公司	2SD2185	PANASONIC	25+	SOT89	30000	代理全新原装现货,价格优势	询价
深圳市诺美思科技有限公司	2SD2185	PANASONIC		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市振宏微科技有限公司	2SD2185	SOT-89	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市一线半导体有限公司	2SD2177A0A	Panasonic-SSG	24+	MT-2	7500		询价
深圳市昊创电子有限公司	2SD218	NEC	专业铁帽	TO-3	1	原装铁帽专营,代理渠道量大可订货	询价
深圳市佳鑫美电子科技有限公司	2SD2185	PANASONIC	25+	SOT89	2987	只售原装自家现货!诚信经营!欢迎来电	询价

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2SD21晶体管资料

2SD21价格

2SD21产品属性

2SD21供应商更多...

2SD21芯片相关品牌

2SD21规格书下载地址

2SD21参数引脚图相关

2SD21数据表相关新闻

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2SD669AL-TO126K-D-TG_UTC代理商

2SD669AL-TO126T-D-TG_UTC代理商

2SD1859TV2R中文资料

DdatasheetPDF页码索引