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2SD21晶体管资料

2SD21别名：2SD21三极管、2SD21晶体管、2SD21晶体三极管
2SD21生产厂家：日本日电公司
2SD21制作材料：Ge-NPN
2SD21性质：低频或音频放大（LF）_TR_输出极（E）
2SD21封装形式：直插封装
2SD21极限工作电压：25V
2SD21最大电流允许值：0.3A
2SD21最大工作频率：<1MHZ或未知
2SD21引脚数：3
2SD21最大耗散功率：0.15W
2SD21放大倍数：β=72
2SD21图片代号：D-9
2SD21vtest：25
2SD21htest：999900
2SD21atest：0.3
2SD21wtest：0.15

2SD21代换 2SD21用什么型号代替：AC127,AC176,AC187,2N1302,2SD72,2SD352,3BX81B,

2SD21价格

参考价格：￥0.3857

型号：2SD2114KT146V 品牌：Rohm 备注：这里有2SD21多少钱，2026年最近7天走势，今日出价，今日竞价，2SD21批发/采购报价，2SD21行情走势销售排行榜，2SD21报价。

型号	功能描述	生产厂家企业	LOGO
2SD2137	丝印代码：2SD2137；TO-220-3L Plastic-Encapsulate Transistors FEATURES High Forward Current Transfer Ratio hFE which Has Satisfactory Linearity Low Collector to Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping	DGNJDZ 南晶电子	DGNJDZ
2SD2100	Compact Motor Driver Applications??? Features • Low saturation voltage. • Contains diode between collector and emitter. • Contains bias resistance between base and emitter. • Large current capacity. • Small-sized package making it easy to provide high density, small-sized hybrid ICs.	SANYO 三洋	SANYO
2SD2101	Silicon NPN Triple Diffused Application Low frequency power amplifier	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD2101	Silicon NPN Triple Diffused Application Low frequency power amplifier	RENESAS 瑞萨	RENESAS
2SD2101	Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • DARLINGTON APPLICATIONS • Low frequency power amplifier	ISC 无锡固电	ISC
2SD2101	Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • DARLINGTON APPLICATIONS • Low frequency power amplifier	JMNIC 锦美电子	JMNIC
2SD2101	Silicon NPN Power Transistors DESCRIPTION • With TO-220Fa package • DARLINGTON APPLICATIONS • Low frequency power amplifier	SAVANTIC	SAVANTIC
2SD2102	SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMFPLIFIER D2102 Hitachi 2SD2102 Datasheet PDF	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD2103	Silicon NPN Triple Diffused Application Low frequency power amplifier	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD2104	Silicon NPN Triple Diffused Application Low frequency power amplifier	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD2104	isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A • High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V APPLICATIONS • Designed for low frequency power amplifier applications	ISC 无锡固电	ISC
2SD2105	isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 5A • High DC Current Gain : hFE= 1000(Min) @ IC= 5A, VCE= 3V APPLICATIONS • Designed for low frequency power amplifier applications	ISC 无锡固电	ISC
2SD2106	isc Silicon NPN Darlington Power Transistor Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V APPLICATIONS ·Design	ISC 无锡固电	ISC
2SD2106	Silicon NPN Epitaxial Silicon NPN Epitaxial Application Low frequency power amplifier	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD2106	Silicon NPN Epitaxial Silicon NPN Epitaxial Application Low frequency power amplifier	RENESAS 瑞萨	RENESAS
2SD2107	Silicon NPN Triple Diffused Applications Low frequency power amplifier	RENESAS 瑞萨	RENESAS
2SD2108	SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD2108	isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 4A • High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V APPLICATIONS • Designed for low frequency power amplifier applications	ISC 无锡固电	ISC
2SD211	Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Large current capability ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications	ISC 无锡固电	ISC
2SD211	Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Large current capability ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications	SAVANTIC	SAVANTIC
2SD2110	isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A • High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V APPLICATIONS • Designed for low frequency power amplifier applications	ISC 无锡固电	ISC
2SD2111	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1.5A, VCE= 3V APPLICATIONS ·Designed for low frequency poweramplifier applications	ISC 无锡固电	ISC
2SD2112	isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A • High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V APPLICATIONS • Designed for low frequency power amplifier applications	ISC 无锡固电	ISC
2SD2113	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain: hFE= 1000(Min) @ IC= 1.5A, VCE= 3V APPLICATIONS ·Designed for low frequency poweramplifier applications	ISC 无锡固电	ISC
2SD2114	TRANSISTOR (NPN) FEATURES • High DC current gain. • High emitter-base voltage. • Low VCE (sat).	HTSEMI 金誉半导体	HTSEMI
2SD2114	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES • High DC current gain. • High emitter-base voltage. • Low VCE (sat).	JIANGSU 长电科技	JIANGSU
2SD2114	丝印代码：BBV；NPN Plastic Encapsulated Transistor FEATURE • High DC Current Gain. • High Emitter-Base Voltage. VEBO=12V (Min.)	SECOS 喜可士	SECOS
2SD2114K	Power Transistor Features High DC current gain. High emitter-base voltage. Low VCE (sat).	KEXIN 科信电子	KEXIN
2SD2114K	High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE= 1200 (Typ.) 2) High emitter-base voltage. VEBO=12V (Min.) 3) Low VCE (sat). VCE (sat)= 0.18V (Typ.) (IC/ IB= 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
2SD2114K	High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114K	High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114KS	High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE= 1200 (Typ.) 2) High emitter-base voltage. VEBO=12V (Min.) 3) Low VCE (sat). VCE (sat)= 0.18V (Typ.) (IC/ IB= 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
2SD2114KT146V	High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114KT146W	High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114KU	High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114KV	High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114KW	High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2115	Power Bipolar Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SD2115	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 150(Min)@ IC= 1.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD2115	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 150(Min)@ IC= 1.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD2115	Silicon NPN Epitaxial Planar Application Low frequency power amplifier	RENESAS 瑞萨	RENESAS
2SD2115	Silicon NPN Epitaxial Planar(Low frequency power amplifier) Application Low frequency power amplifier	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD2115-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 150(Min)@ IC= 1.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD2115-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 150(Min)@ IC= 1.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD2115L	Silicon NPN Epitaxial Planar(Low frequency power amplifier) Application Low frequency power amplifier	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD2115L	Silicon NPN Epitaxial Planar Application Low frequency power amplifier	RENESAS 瑞萨	RENESAS
2SD2115S	Silicon NPN Epitaxial Planar Application Low frequency power amplifier	RENESAS 瑞萨	RENESAS
2SD2115S	Silicon NPN Epitaxial Planar(Low frequency power amplifier) Application Low frequency power amplifier	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD2115S	Silicon NPN Epitaxial Features ● Low frequency power amplifier.	KEXIN 科信电子	KEXIN
2SD2116	General Driver Applications??????? General Driver Applications Features • Darlington connection. • High DC current gain. • Large current capacity, wide ASO.	SANYO 三洋	SANYO
2SD2117	General Driver Applications????????? General Driver Applications Features • Darlington connection. • High DC current gain. • Large current capacity, wide ASO.	SANYO 三洋	SANYO
2SD2118	丝印代码：D2118；Low VCE(sat) Transistor(Strobe flash) Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
2SD2118	Low VCE(sat) Transistor Features Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor.	KEXIN 科信电子	KEXIN
2SD2118	Silicon NPN Power Transistor FEATURES · High current capacity · Low collector-to-emitter saturation voltage · Fast switching speed APPLICATIONS ·Strobes,voltage regulators,relay drivers,lamp drivers	ISC 无锡固电	ISC
2SD2118	Silicon NPN Power Transistor FEATURES · High current capacity · Low collector-to-emitter saturation voltage · Fast switching speed APPLICATIONS ·Strobes,voltage regulators,relay drivers,lamp drivers	ISC 无锡固电	ISC
2SD2118	NPN Silicon General Purpose Transistor FEATURES Low VCE(sat). VCE(sat)= 0.25V(Typ.) (IC/IB= 4A / 0.1A) Excellent DC Current Gain Characteristics	SECOS 喜可士	SECOS
2SD2118-251	Silicon NPN Power Transistor FEATURES · High current capacity · Low collector-to-emitter saturation voltage · Fast switching speed APPLICATIONS ·Strobes,voltage regulators,relay drivers,lamp drivers	ISC 无锡固电	ISC
2SD2118-252	Silicon NPN Power Transistor FEATURES · High current capacity · Low collector-to-emitter saturation voltage · Fast switching speed APPLICATIONS ·Strobes,voltage regulators,relay drivers,lamp drivers	ISC 无锡固电	ISC
2SD2118TLQ	Low VCE(sat) Transistor(Strobe flash) Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
2SD2118TLR	Low VCE(sat) Transistor(Strobe flash) Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM

2SD21产品属性

类型
描述
VCEO (V)：
60
Production Status：
EOL

2SD21供应商更多...

更新时间：2026-5-14 15:15:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	2SD2137	CJ/长电	2026+	TO220-3L	54648	百分百原装现货实单必成欢迎询价	询价
深圳市诺美思科技有限公司	2SD2137-Q	PANASONIC		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市卓越微芯电子有限公司	2SD2137-P	Panason	25+	TO220FL	1250	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市明嘉莱科技有限公司	2SD2137	N/A	25+	TO-220F	880000	明嘉莱只做原装正品现货	询价
艾睿（深圳）半导体有限公司	2SD2137-P(TA)+	PANASONIC/松下	2447	TO220	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市安富世纪电子有限公司	2SD2137A-Q	PANASONIC/松下	23+	8	6500	专注配单,只做原装进口现货	询价
天津市博通航睿技术有限公司	2SD2137-P(TA)	PANASONIC/松下	23+	TO-220F	7000		询价
洪芯国际半导体（深圳）有限公司	2SD2137ADPT	PANASONIC	26+	原厂原封装	86720	全新原装正品价格最实惠假一赔百	询价
深圳市华斯顿科技有限公司	2SD2137-P(TA)+	PANASONI	25+23+	TO220	24916	绝对原装正品全新进口深圳现货	询价
深圳市科翼源电子有限公司	2SD2137-P	Panasonic	23+	TO220FL	3700	原厂原装正品	询价

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找IC，尽在114IC

2SD21晶体管资料

2SD21价格

2SD21产品属性

2SD21供应商更多...

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2SD21规格书下载地址

2SD21参数引脚图相关

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2SD669AL-TO126K-D-TG_UTC代理商

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DdatasheetPDF页码索引