2SD211晶体三极管资料datasheet下载批发供应采购-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

位置：首页 > IC中文资料第6038页 > 2SD211

2SD211晶体管资料

2SD211别名：2SD211三极管、2SD211晶体管、2SD211晶体三极管
2SD211生产厂家：日本三肯公司
2SD211制作材料：Si-NPN
2SD211性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SD211封装形式：贴片封装
2SD211极限工作电压：60V
2SD211最大电流允许值：10A
2SD211最大工作频率：<1MHZ或未知
2SD211引脚数：2
2SD211最大耗散功率：100W
2SD211放大倍数：
2SD211图片代号：E-44
2SD211vtest：60
2SD211htest：999900
2SD211atest：10
2SD211wtest：100

2SD211代换 2SD211用什么型号代替：BD130,BD311,BDW21A,BDX10,BDY20,BDY39,2N3055,2N5877,2N5878,3DA74A,

2SD211价格

参考价格：￥0.3857

型号：2SD2114KT146V 品牌：Rohm 备注：这里有2SD211多少钱，2025年最近7天走势，今日出价，今日竞价，2SD211批发/采购报价，2SD211行情走势销售排行榜，2SD211报价。

型号	功能描述	生产厂家企业	LOGO
2SD211	Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Large current capability ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications	ISC 无锡固电	ISC
2SD211	Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Large current capability ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications	SAVANTIC	SAVANTIC
2SD2110	isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A • High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V APPLICATIONS • Designed for low frequency power amplifier applications	ISC 无锡固电	ISC
2SD2111	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1.5A, VCE= 3V APPLICATIONS ·Designed for low frequency poweramplifier applications	ISC 无锡固电	ISC
2SD2112	isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A • High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V APPLICATIONS • Designed for low frequency power amplifier applications	ISC 无锡固电	ISC
2SD2113	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain: hFE= 1000(Min) @ IC= 1.5A, VCE= 3V APPLICATIONS ·Designed for low frequency poweramplifier applications	ISC 无锡固电	ISC
2SD2114	NPN Plastic Encapsulated Transistor FEATURE • High DC Current Gain. • High Emitter-Base Voltage. VEBO=12V (Min.)	SECOS 喜可士	SECOS
2SD2114	TRANSISTOR (NPN) FEATURES • High DC current gain. • High emitter-base voltage. • Low VCE (sat).	HTSEMI 金誉半导体	HTSEMI
2SD2114	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES • High DC current gain. • High emitter-base voltage. • Low VCE (sat).	JIANGSU 长电科技	JIANGSU
2SD2114K	High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE= 1200 (Typ.) 2) High emitter-base voltage. VEBO=12V (Min.) 3) Low VCE (sat). VCE (sat)= 0.18V (Typ.) (IC/ IB= 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
2SD2114K	High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114K	Power Transistor Features High DC current gain. High emitter-base voltage. Low VCE (sat).	KEXIN 科信电子	KEXIN
2SD2114K	High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114KS	High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE= 1200 (Typ.) 2) High emitter-base voltage. VEBO=12V (Min.) 3) Low VCE (sat). VCE (sat)= 0.18V (Typ.) (IC/ IB= 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
2SD2114KT146V	High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114KT146W	High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114KU	High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114KV	High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2114KW	High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)	ROHM 罗姆	ROHM
2SD2115	Silicon NPN Epitaxial Planar Application Low frequency power amplifier	RENESAS 瑞萨	RENESAS
2SD2115	Silicon NPN Epitaxial Planar(Low frequency power amplifier) Application Low frequency power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SD2115	Power Bipolar Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SD2115	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 150(Min)@ IC= 1.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD2115	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 150(Min)@ IC= 1.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD2115-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 150(Min)@ IC= 1.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD2115-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 150(Min)@ IC= 1.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD2115L	Silicon NPN Epitaxial Planar Application Low frequency power amplifier	RENESAS 瑞萨	RENESAS
2SD2115L	Silicon NPN Epitaxial Planar(Low frequency power amplifier) Application Low frequency power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SD2115S	Silicon NPN Epitaxial Planar(Low frequency power amplifier) Application Low frequency power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SD2115S	Silicon NPN Epitaxial Planar Application Low frequency power amplifier	RENESAS 瑞萨	RENESAS
2SD2115S	Silicon NPN Epitaxial Features ● Low frequency power amplifier.	KEXIN 科信电子	KEXIN
2SD2116	General Driver Applications??????? General Driver Applications Features • Darlington connection. • High DC current gain. • Large current capacity, wide ASO.	SANYO 三洋	SANYO
2SD2117	General Driver Applications????????? General Driver Applications Features • Darlington connection. • High DC current gain. • Large current capacity, wide ASO.	SANYO 三洋	SANYO
2SD2118	Low VCE(sat) Transistor(Strobe flash) Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
2SD2118	NPN Silicon General Purpose Transistor FEATURES Low VCE(sat). VCE(sat)= 0.25V(Typ.) (IC/IB= 4A / 0.1A) Excellent DC Current Gain Characteristics	SECOS 喜可士	SECOS
2SD2118	Low VCE(sat) Transistor Features Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor.	KEXIN 科信电子	KEXIN
2SD2118	Silicon NPN Power Transistor FEATURES · High current capacity · Low collector-to-emitter saturation voltage · Fast switching speed APPLICATIONS ·Strobes,voltage regulators,relay drivers,lamp drivers	ISC 无锡固电	ISC
2SD2118	Silicon NPN Power Transistor FEATURES · High current capacity · Low collector-to-emitter saturation voltage · Fast switching speed APPLICATIONS ·Strobes,voltage regulators,relay drivers,lamp drivers	ISC 无锡固电	ISC
2SD2118-251	Silicon NPN Power Transistor FEATURES · High current capacity · Low collector-to-emitter saturation voltage · Fast switching speed APPLICATIONS ·Strobes,voltage regulators,relay drivers,lamp drivers	ISC 无锡固电	ISC
2SD2118-252	Silicon NPN Power Transistor FEATURES · High current capacity · Low collector-to-emitter saturation voltage · Fast switching speed APPLICATIONS ·Strobes,voltage regulators,relay drivers,lamp drivers	ISC 无锡固电	ISC
2SD2118TLQ	Low VCE(sat) Transistor(Strobe flash) Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
2SD2118TLR	Low VCE(sat) Transistor(Strobe flash) Features 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. Structure Epitaxial planar type NPN silicon transistor	ROHM 罗姆	ROHM
2SD2114	20V,0.5A,General Purpose NPN Bipolar Transistor	GALAXY 银河微电	GALAXY
2SD2114	NPN Plastic-Encapsulate Transistor 文件：256.7 Kbytes Page：3 Pages	SECOS 喜可士	SECOS
2SD2114_11	NPN Plastic-Encapsulate Transistor 文件：256.7 Kbytes Page：3 Pages	SECOS 喜可士	SECOS
2SD2114_15	NPN Plastic-Encapsulate Transistor 文件：413.88 Kbytes Page：3 Pages	SECOS 喜可士	SECOS
2SD2114K	High-current Gain Medium Power Transistor 文件：164.02 Kbytes Page：4 Pages	ROHM 罗姆	ROHM
2SD2114K	High hFE&Muting Transistor	ROHM 罗姆	ROHM
2SD2114K	High-current Gain Medium Power Transistor (20V, 0.5A) 文件：99.44 Kbytes Page：5 Pages	ROHM 罗姆	ROHM
2SD2114K_1	High-current Gain Medium Power Transistor (20V, 0.5A) 文件：99.44 Kbytes Page：5 Pages	ROHM 罗姆	ROHM
2SD2114K_12	High-current Gain Medium Power Transistor 文件：164.02 Kbytes Page：4 Pages	ROHM 罗姆	ROHM
2SD2114KT146W	封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS NPN 20V 0.5A SMT3 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ROHM 罗姆	ROHM
2SD2114KV	TRANSISTOR	AITSEMI 创瑞科技	AITSEMI
2SD2118	Silicon NPN transistor in a TO-252 Plastic Package. 文件：1.16642 Mbytes Page：6 Pages	FOSHAN 蓝箭电子	FOSHAN
2SD2118	TRANSISTOR (NPN) 文件：130.24 Kbytes Page：2 Pages	WINNERJOIN 永而佳	WINNERJOIN
2SD2118	TO-251-3L Plastic-Encapsulate Transistors 文件：558.38 Kbytes Page：2 Pages	JIANGSU 长电科技	JIANGSU
2SD2118	isc Silicon NPN Power Transistor 文件：330.68 Kbytes Page：3 Pages	ISC 无锡固电	ISC
2SD2118	Plastic-Encapsulated Transistors 文件：106.88 Kbytes Page：2 Pages	TEL	TEL
2SD2118	Low VCE(sat) transistor (strobe flash) 文件：109.28 Kbytes Page：5 Pages	ROHM 罗姆	ROHM
2SD2118	Low VCE(sat) transistor (strobe flash) 文件：185.03 Kbytes Page：4 Pages	ROHM 罗姆	ROHM

2SD211产品属性

类型
描述
型号
2SD211
制造商
ISC
制造商全称
Inchange Semiconductor Company Limited
功能描述
Silicon NPN Power Transistors

2SD211供应商更多...

更新时间：2025-12-25 8:03:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市力仕科电子科技有限公司	2SD2114KT146W	ROHM(罗姆)	25	SC-59	801	QQ询价绝对原装正品	询价
深圳市华来深电子有限公司	2SD2118TLS	ROHM	25+	SMD	20000	专做罗姆，一系列可以订货排单，只做原装正品假一罚十	询价
深圳市益百分电子有限公司	2SD2114K	ROHM	08PB	SOT23/	6790	全新原装进口自己库存优势	询价
深圳市弘为电子有限公司	2SD2114K	罗姆	24+	SOT23	3000	原装现货假一罚十	询价
深圳市凌旭科技有限公司	2SD2114K	ROHM	2016+	SOT-23	4750	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市科芯源微电子有限公司	2SD2114K	ROHM/罗姆	23+	SOT-23	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
中天科工半导体（深圳）有限公司	2SD2110	HITACHI/日立	25+	TO-220F	45000	HITACHI/日立全新现货2SD2110即刻询购立享优惠#长期有排单订	询价
深圳市科恒伟业电子有限公司	2SD2114	CJ	2450+	SOT23	9850	只做原装正品现货或订货假一赔十!	询价
深圳市科翼源电子有限公司	2SD2114	CJ	23+	SOT23	8500	原厂原装正品	询价
深圳市诚利顺电子科技有限公司	2SD2114	CJ	22+	SOT23	30000	十七年VIP会员,诚信经营，一手货源，原装正品可零售！	询价

2SD211芯片相关品牌

2SD211规格书下载地址

2SD211参数引脚图相关

2SD211数据表相关新闻

2SD667L-TO92NLB-C-TG_UTC代理商
2SD667L-TO92NLB-C-TG_UTC代理商
2023-3-17
2SD1898G-SOT89R-Q-TG_UTC代理商
2SD1898G-SOT89R-Q-TG_UTC代理商
2023-2-23
2SD1857L-TO92NLB-R-TG_UTC代理商
2SD1857L-TO92NLB-R-TG_UTC代理商
2023-2-16
2SD669AL-TO126K-D-TG_UTC代理商
2SD669AL-TO126K-D-TG_UTC代理商
2023-2-13
2SD669AL-TO126T-D-TG_UTC代理商
2SD669AL-TO126T-D-TG_UTC代理商
2023-2-2
2SD1859TV2R中文资料
2SD1859TV2R中文资料
2019-2-15

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

2SD211晶体管资料

2SD211价格

2SD211产品属性

2SD211供应商更多...

2SD211芯片相关品牌

2SD211规格书下载地址

2SD211参数引脚图相关

2SD211数据表相关新闻

2SD667L-TO92NLB-C-TG_UTC代理商

2SD1898G-SOT89R-Q-TG_UTC代理商

2SD1857L-TO92NLB-R-TG_UTC代理商

2SD669AL-TO126K-D-TG_UTC代理商

2SD669AL-TO126T-D-TG_UTC代理商

2SD1859TV2R中文资料

DdatasheetPDF页码索引