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2SD2114晶体管资料
2SD2114K别名：2SD2114K三极管、2SD2114K晶体管、2SD2114K晶体三极管
2SD2114K生产厂家：TOY
2SD2114K制作材料：Si-NPN
2SD2114K性质：表面帖装型 （SMD）
2SD2114K封装形式：贴片封装
2SD2114K极限工作电压：25V
2SD2114K最大电流允许值：0.5A
2SD2114K最大工作频率：<1MHZ或未知
2SD2114K引脚数：3
2SD2114K最大耗散功率：
2SD2114K放大倍数：β>560
2SD2114K图片代号：H-15
2SD2114Kvtest：25
2SD2114Khtest：999900
- 2SD2114Katest：0.5
2SD2114Kwtest：0
2SD2114K代换 2SD2114K用什么型号代替：2SC3326,2SC3440,2SC3661,2SD596,2SD1328,
2SD2114价格
参考价格：￥0.3857
型号：2SD2114KT146V 品牌：Rohm 备注：这里有2SD2114多少钱，2025年最近7天走势，今日出价，今日竞价，2SD2114批发/采购报价，2SD2114行情走势销售排行榜，2SD2114报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SD2114 | NPN Plastic Encapsulated Transistor FEATURE • High DC Current Gain. • High Emitter-Base Voltage. VEBO=12V (Min.) | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 |   | |
2SD2114 | TRANSISTOR (NPN) FEATURES • High DC current gain. • High emitter-base voltage. • Low VCE (sat). | HTSEMI 金誉半导体 | | |
2SD2114 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES • High DC current gain. • High emitter-base voltage. • Low VCE (sat). | JIANGSU 长电科技 | | |
2SD2114 | NPN Plastic-Encapsulate Transistor 文件：256.7 Kbytes Page：3 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | |
High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) | ROHM 罗姆 | | ||
High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE= 1200 (Typ.) 2) High emitter-base voltage. VEBO=12V (Min.) 3) Low VCE (sat). VCE (sat)= 0.18V (Typ.) (IC/ IB= 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor | ROHM 罗姆 | | ||
Power Transistor Features High DC current gain. High emitter-base voltage. Low VCE (sat). | KEXIN 科信电子 | | ||
High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) | ROHM 罗姆 | | ||
High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE= 1200 (Typ.) 2) High emitter-base voltage. VEBO=12V (Min.) 3) Low VCE (sat). VCE (sat)= 0.18V (Typ.) (IC/ IB= 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor | ROHM 罗姆 | | ||
High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) | ROHM 罗姆 | | ||
High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) | ROHM 罗姆 | | ||
High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) | ROHM 罗姆 | | ||
High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) | ROHM 罗姆 | | ||
High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) | ROHM 罗姆 | | ||
NPN Plastic-Encapsulate Transistor 文件：256.7 Kbytes Page：3 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | ||
NPN Plastic-Encapsulate Transistor 文件：413.88 Kbytes Page：3 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | | ||
High-current Gain Medium Power Transistor 文件：164.02 Kbytes Page：4 Pages | ROHM 罗姆 | | ||
High-current Gain Medium Power Transistor (20V, 0.5A) 文件：99.44 Kbytes Page：5 Pages | ROHM 罗姆 | | ||
High-current Gain Medium Power Transistor (20V, 0.5A) 文件：99.44 Kbytes Page：5 Pages | ROHM 罗姆 | | ||
High-current Gain Medium Power Transistor 文件：164.02 Kbytes Page：4 Pages | ROHM 罗姆 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 0.5A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 0.5A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | |
2SD2114产品属性
- 类型
描述
- 型号
2SD2114
- 制造商
HTSEMI
- 制造商全称
Shenzhen Jin Yu Semiconductor Co., Ltd.
- 功能描述
TRANSISTOR(NPN)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
2407+ |
30098 |
全新原装!仓库现货,大胆开价! |
||||
ROHM |
22+23+ |
SOT23 |
8000 |
新到现货，只做原装进口 |
|||
ROHM/罗姆 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
|||
ROHM/罗姆 |
15+ |
SOT23 |
600 |
原装正品现货,可开发票,假一赔十 |
|||
24+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ROHM/罗姆 |
25+ |
SOT23 |
32000 |
ROHM/罗姆全新特价2SD2114KT146V即刻询购立享优惠#长期有货 |
|||
ROHM |
2023+ |
SOT23 |
58000 |
进口原装,现货热卖 |
|||
ROHM/罗姆 |
24+ |
SOT-323 |
20000 |
只做正品原装现货 |
|||
ROHM |
21+ |
15000 |
SMT3 (SOT-346) (SC-59) |
||||
ROHM |
24+ |
SOT-23 |
65200 |
一级代理/放心采购 |
2SD2114规格书下载地址
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2019-2-15
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