Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification, Complementary to 2SB1417 and 2SB1417A Features 1. High forward current transfer ratio hFEwhich has satisfactory linearity 2. Low collector to emitter saturation voltage VCE(sat) 3. Allowing supply with the r

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping

TO-220-3L Plastic-Encapsulate Transistors

FEATURES High Forward Current Transfer Ratio hFE which Has Satisfactory Linearity Low Collector to Emitter Saturation Voltage VCE(sat) Allowing Supply with the Radial Taping

晶体管

Plastic-Encapsulated Transistors

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TO-220 -3L Plastic-Encapsulate Transistors

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TRANSISTOR (NPN)

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TRANSISTOR (NPN)

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isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage VCEO: 80 V(Min) ·Low Collector Saturation Voltage : VCE(sat) = 1.2V(Max.)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applications

TO-220-3L Plastic-Encapsulate Transistors

FEATURES High DC Current Gain Low Collector to Emitter Saturation Voltage VCE(sat) Allowing Automatic Insertion with Radial Taping

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector to emitter saturation voltage VCE(sat) ● Allowing automatic insertion with radial taping

Silicon NPN triple diffusion planar type(For power amplification)

Silicon NPN triple diffusion planar type For power amplification, Complementary to 2SB1417 and 2SB1417A Features 1. High forward current transfer ratio hFEwhich has satisfactory linearity 2. Low collector to emitter saturation voltage VCE(sat) 3. Allowing supply with the r

TO-220-3L Plastic-Encapsulate Transistors

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80V,3A,Medium Power NPN Bipolar Transistor

晶体管

封装/外壳：3-SIP 包装：散装 描述：TRANS NPN 80V 3A MT-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个