NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications

ST13002A

High voltage power transistor

NPN Silicon Power Transistors

These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. ​​​​​​​ They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. ​​​​​​​ The transistor is subdivided into one group according to its DC current gain.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high vo

High voltage fast-switching NPN power transistor

Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for hig

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high vo

High voltage fast-switching NPN power transistor

Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for hig

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ H

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ H

High voltage fast-switching NPN power transistor

Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for hig

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High vol

NPN Silicon Power Transistors

These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. ​​​​​​​ They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection

NPN Silicon Power Transistors

for high-voltage, high-speed power switching applications.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ MEDIUM VOLTAGE CAPABILITY ■ NPN TRANSISTORS ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED ■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

High voltage fast-switching NPN power transistor

Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ MEDIUM VOLTAGE CAPABILITY ■ NPN TRANSISTORS ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED ■ THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”) APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

High voltage fast-switching NPN power transistor

Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The devices are is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. ■ MEDIUM VOLT

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA. ■ MEDIUM VOL

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features • DC curr

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ■ IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ■ IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds. ■ HIGH VOLTAGE CAPABILITY ■ NPN TRANSISTOR ■ LOW SPREAD OF DYNAMIC PARAMETERS ■

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds ■ HIGH VOLTAGE CAPABILITY ■ NPN TRANSISTOR ■ LOW SPREAD OF DYNAMIC PARAMETERS ■

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds ■ HIGH VOLTAGE CAPABILITY ■ NPN TRANSISTOR ■ LOW SPREAD OF DYNAMIC PARAMETERS ■

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching speeds. Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lo

High voltage fast-switching NPN power transistor

Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology fo

SCHOTTKY RECTIFIER

Features  175 C TJ operation  Center tap configuration  Ultralow forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability 

High Endurance CMOS 192 bit EEPROM With Secure Logic Access Control

DESCRIPTION The ST1305 is a 192-bit EEPROM device with associated security logic to control memory access. The circuit includes counting capabilities and thus is very well adapted to prepaid card applications. ■ Single 5 V Supply Voltage ■ Programming Time: 5 ms ■ Memory Divided Into: – 1

Memory Micromodules General Information for D1, D2 and C Packaging

DESCRIPTION Memory Cards consist of two main parts: the plastic card, and the embedded Micromodule (which, in turn, carries the silicon chip). ■ Micromodules were developed specifically for embedding in Smartcards and Memory Cards ■ The Micromodule provides: – Support for the chi

Memory Card IC 192 bit High Endurance EEPROM With Secure Logic Access Control

DESCRIPTION The ST1305B is a 192-bit EEPROM device with associated security logic to control memory access. The circuit includes counting capabilities and thus is very well adapted to prepaid card applications. ■ Single Supply Voltage (5 V) ■ Memory Divided Into: – 16 bits of Circuit Ident

Memory Card IC 192 bit High Endurance EEPROM With Secure Logic Access Control

DESCRIPTION The ST1305B is a 192-bit EEPROM device with associated security logic to control memory access. The circuit includes counting capabilities and thus is very well adapted to prepaid card applications. ■ Single Supply Voltage (5 V) ■ Memory Divided Into: – 16 bits of Circuit Ident

Memory Card IC 192 bit High Endurance EEPROM With Secure Logic Access Control

DESCRIPTION The ST1305B is a 192-bit EEPROM device with associated security logic to control memory access. The circuit includes counting capabilities and thus is very well adapted to prepaid card applications. ■ Single Supply Voltage (5 V) ■ Memory Divided Into: – 16 bits of Circuit Ident

Memory Card IC 192 bit High Endurance EEPROM With Secure Logic Access Control

DESCRIPTION The ST1305B is a 192-bit EEPROM device with associated security logic to control memory access. The circuit includes counting capabilities and thus is very well adapted to prepaid card applications. ■ Single Supply Voltage (5 V) ■ Memory Divided Into: – 16 bits of Circuit Ident

High Endurance CMOS 192 bit EEPROM With Secure Logic Access Control

DESCRIPTION The ST1305 is a 192-bit EEPROM device with associated security logic to control memory access. The circuit includes counting capabilities and thus is very well adapted to prepaid card applications. ■ Single 5 V Supply Voltage ■ Programming Time: 5 ms ■ Memory Divided Into: – 1

High Endurance CMOS 192 bit EEPROM With Secure Logic Access Control

DESCRIPTION The ST1305 is a 192-bit EEPROM device with associated security logic to control memory access. The circuit includes counting capabilities and thus is very well adapted to prepaid card applications. ■ Single 5 V Supply Voltage ■ Programming Time: 5 ms ■ Memory Divided Into: – 1

控制和保护变压器

控制和隔离变压器

控制和隔离变压器

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 1.5A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-225AA，TO-126-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 400V 1A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High voltage fast-switching NPN power transistor

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High voltage fast-switching NPN power transistor

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High voltage fast-switching NPN power transistor

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High voltage fast-switching NPN power transistor

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SCHOTTKY RECTIFIER

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GAMMA SEALS

DESCRIPTION The BECA 130 profile is a gamma seal. Sealing happens when the axial force of the lip comes into contact with the housing. The metal part protects the rubber axial lip from external pollution. APPLICATIONS Axles Machine tools Electric motors Pumps Transmissions

1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

Screw connection

The plug connector 130-A series was developed according to “White Goods Standard RAST 5 (Plug-Connection-Technology with a pitch of 5 mm). Due to its diverse coding possibilities, it offers maximum safety against incorrect plugging. For the coded version, a corresponding drawing or description

THREADED INSERT, BLIND, REGULAR HEAD STYLE LIGHT DUTY

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THREE PHASE BRIDGE

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