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ST130价格
参考价格:¥2.1574
型号:ST13003D-K 品牌:STMicroelectronics 备注:这里有ST130多少钱,2024年最近7天走势,今日出价,今日竞价,ST130批发/采购报价,ST130行情走势销售排行榜,ST130报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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NPNSiliconEpitaxialPlanarTransistor NPNSiliconEpitaxialPlanarTransistor forhighvoltageandhighspeedswitchingapplications | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
ST13002A Highvoltagepowertransistor | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
NPNSiliconPowerTransistors Thesedevicesaredesignedforhigh-voltage,high-speedpowerswitchinginductivecircuitswherefalltimeiscritical. Theyareparticularlysuitedfor115and220VSWITCHMODEapplicationssuchasSwitchingRegulator’s,Inverters,MotorControls,Solenoid/RelaydriversandDeflection | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
NPNSiliconEpitaxialPlanarTransistor NPNSiliconEpitaxialPlanarTransistor forpowerswitchingandelectronrectifierapplications. ThetransistorissubdividedintoonegroupaccordingtoitsDCcurrentgain. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR ■MEDIUMVOLTAGECAPABILITY ■LOWSPREADOFDYNAMICPARAMETERS ■MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION ■VERYHIGHSWITCHINGSPEED APPLICATIONS: ■ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING ■SWITCHMODEPOWERSUPPLIES DESCRIPTION Thedeviceismanufacturedusinghighvo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR ■MEDIUMVOLTAGECAPABILITY ■LOWSPREADOFDYNAMICPARAMETERS ■MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION ■VERYHIGHSWITCHINGSPEED APPLICATIONS: ■ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING ■SWITCHMODEPOWERSUPPLIES DESCRIPTION Thedeviceismanufacturedusinghighvo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Highvoltagefast-switchingNPNpowertransistor Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Highvoltagefast-switchingNPNpowertransistor Description Thedeviceismanufacturedusinghighvoltagemultiepitaxialplanartechnologyforhighswitchingspeedsandhighvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features ■Highvolt | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Highvoltagefast-switchingNPNpowertransistor Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandhighvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features ■H | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Highvoltagefast-switchingNPNpowertransistor Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandhighvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features ■H | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Highvoltagefast-switchingNPNpowertransistor Description Thedeviceismanufacturedusinghighvoltagemultiepitaxialplanartechnologyforhighswitching speedsandhighvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features ■Highvol | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
NPNSiliconPowerTransistors Thesedevicesaredesignedforhigh-voltage,high-speedpowerswitchinginductivecircuitswherefalltimeiscritical. Theyareparticularlysuitedfor115and220VSWITCHMODEapplicationssuchasSwitchingRegulator’s,Inverters,MotorControls,Solenoid/RelaydriversandDeflection | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
Highvoltagefast-switchingNPNpowertransistor Features ■Lowspreadofdynamicparameters ■Minimumlot-to-lotspreadforreliableoperation ■Veryhighswitchingspeed Applications ■Electronicballastforfluorescentlighting ■Switchmodepowersupplies Description Thisdeviceismanufacturedusinghighvoltage multiepitaxial | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
NPNSiliconPowerTransistors forhigh-voltage,high-speedpowerswitchingapplications. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR ■MEDIUMVOLTAGECAPABILITY ■NPNTRANSISTORS ■LOWSPREADOFDYNAMICPARAMETERS ■MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION ■VERYHIGHSWITCHINGSPEED ■THROUGH-HOLEI2PAK(TO-262)POWER PACKAGEINTUBE(SUFFIX”-1”) APPLICATIONS: ■ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTORS DESCRIPTION ThedevicesareismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.TheyuseaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. ■MEDIUMVOLT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR ■MEDIUMVOLTAGECAPABILITY ■NPNTRANSISTORS ■LOWSPREADOFDYNAMICPARAMETERS ■MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION ■VERYHIGHSWITCHINGSPEED ■THROUGH-HOLEI2PAK(TO-262)POWER PACKAGEINTUBE(SUFFIX”-1”) APPLICATIONS: ■ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Highvoltagefast-switchingNPNpowertransistor Features ■Lowspreadofdynamicparameters ■Minimumlot-to-lotspreadforreliableoperation ■Veryhighswitchingspeed Applications ■Electronicballastforfluorescentlighting ■Switchmodepowersupplies Description Thisdeviceismanufacturedusinghighvoltage multiepitaxial | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTORS DESCRIPTION ThedevicesareismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.TheyuseaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. ■MEDIUMVOLT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingasatisfactoryRBSOA. ■MEDIUMVOL | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhigh switchingspeedsandhighvoltagecapability.Itusesacellularemitterstructurewithplanar edgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features •DCcurr | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability. ItusesaCellularEmitterstructuretoenhanceswitchingspeeds. ■IMPROVEDSPECIFICATION: -LOWERLEAKAGECURRENT -TIGHTERGAINRANGE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.ItusesaCellularEmitterstructuretoenhanceswitchingspeeds. ■IMPROVEDSPECIFICATION: -LOWERLEAKAGECURRENT -TIGHTERGAINRANGE | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.TheyuseaCellularEmitterstructuretoenhanceswitchingspeeds. ■HIGHVOLTAGECAPABILITY ■NPNTRANSISTOR ■LOWSPREADOFDYNAMICPARAMETERS ■ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTORS DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.TheyuseaCellularEmitterstructuretoenhanceswitchingspeeds ■HIGHVOLTAGECAPABILITY ■NPNTRANSISTOR ■LOWSPREADOFDYNAMICPARAMETERS ■ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTORS DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.TheyuseaCellularEmitterstructuretoenhanceswitchingspeeds ■HIGHVOLTAGECAPABILITY ■NPNTRANSISTOR ■LOWSPREADOFDYNAMICPARAMETERS ■ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Highvoltagefast-switchingNPNpowertransistor Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandhighvoltagecapability.Itusesahollowemitterstructuretoenhanceswitchingspeeds. Features ■Lowspreadofdynamicparameters ■Highvoltagecapability ■Minimumlo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SCHOTTKYRECTIFIER Features 175CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability | SMCDIODESMC Diode Solutions 桑德斯微电子器件(南京)有限公司 | |||
HighEnduranceCMOS192bitEEPROMWithSecureLogicAccessControl DESCRIPTION TheST1305isa192-bitEEPROMdevicewithassociatedsecuritylogictocontrolmemoryaccess.Thecircuitincludescountingcapabilitiesandthusisverywelladaptedtoprepaidcardapplications. ■Single5VSupplyVoltage ■ProgrammingTime:5ms ■MemoryDividedInto: –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
MemoryMicromodulesGeneralInformationforD1,D2andCPackaging DESCRIPTION MemoryCardsconsistoftwomainparts:theplasticcard,andtheembeddedMicromodule(which,inturn,carriesthesiliconchip). ■Micromodulesweredevelopedspecificallyfor embeddinginSmartcardsandMemoryCards ■TheMicromoduleprovides: –Supportforthechi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
MemoryCardIC192bitHighEnduranceEEPROMWithSecureLogicAccessControl DESCRIPTION TheST1305Bisa192-bitEEPROMdevicewithassociatedsecuritylogictocontrolmemoryaccess.Thecircuitincludescountingcapabilitiesandthusisverywelladaptedtoprepaidcardapplications. ■SingleSupplyVoltage(5V) ■MemoryDividedInto: –16bitsofCircuitIdent | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
MemoryCardIC192bitHighEnduranceEEPROMWithSecureLogicAccessControl DESCRIPTION TheST1305Bisa192-bitEEPROMdevicewithassociatedsecuritylogictocontrolmemoryaccess.Thecircuitincludescountingcapabilitiesandthusisverywelladaptedtoprepaidcardapplications. ■SingleSupplyVoltage(5V) ■MemoryDividedInto: –16bitsofCircuitIdent | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
MemoryCardIC192bitHighEnduranceEEPROMWithSecureLogicAccessControl DESCRIPTION TheST1305Bisa192-bitEEPROMdevicewithassociatedsecuritylogictocontrolmemoryaccess.Thecircuitincludescountingcapabilitiesandthusisverywelladaptedtoprepaidcardapplications. ■SingleSupplyVoltage(5V) ■MemoryDividedInto: –16bitsofCircuitIdent | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
MemoryCardIC192bitHighEnduranceEEPROMWithSecureLogicAccessControl DESCRIPTION TheST1305Bisa192-bitEEPROMdevicewithassociatedsecuritylogictocontrolmemoryaccess.Thecircuitincludescountingcapabilitiesandthusisverywelladaptedtoprepaidcardapplications. ■SingleSupplyVoltage(5V) ■MemoryDividedInto: –16bitsofCircuitIdent | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
HighEnduranceCMOS192bitEEPROMWithSecureLogicAccessControl DESCRIPTION TheST1305isa192-bitEEPROMdevicewithassociatedsecuritylogictocontrolmemoryaccess.Thecircuitincludescountingcapabilitiesandthusisverywelladaptedtoprepaidcardapplications. ■Single5VSupplyVoltage ■ProgrammingTime:5ms ■MemoryDividedInto: –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
HighEnduranceCMOS192bitEEPROMWithSecureLogicAccessControl DESCRIPTION TheST1305isa192-bitEEPROMdevicewithassociatedsecuritylogictocontrolmemoryaccess.Thecircuitincludescountingcapabilitiesandthusisverywelladaptedtoprepaidcardapplications. ■Single5VSupplyVoltage ■ProgrammingTime:5ms ■MemoryDividedInto: –1 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 400V 1.5A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
封装/外壳:TO-225AA,TO-126-3 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 400V 1A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Highvoltagefast-switchingNPNpowertransistor 文件:240.1 Kbytes Page:10 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Highvoltagefast-switchingNPNpowertransistor 文件:240.1 Kbytes Page:10 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Highvoltagefast-switchingNPNpowertransistor 文件:234.22 Kbytes Page:12 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
Highvoltagefast-switchingNPNpowertransistor 文件:234.22 Kbytes Page:12 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
SCHOTTKYRECTIFIER 文件:211.16 Kbytes Page:5 Pages | SMCSintered Metal Company 烧结金属烧结金属公司 | |||
1.3WattsAxialLeadedZenerDiodes VOLTAGERANGE:2.4-200VPOWER:1.3Watts Features ●CompleteVoltageRange2.4to200Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
Screwconnection Theplugconnector130-Aserieswasdevelopedaccordingto“WhiteGoods StandardRAST5(Plug-Connection-Technologywithapitchof5mm).Duetoits diversecodingpossibilities,itoffersmaximumsafetyagainstincorrectplugging. Forthecodedversion,acorrespondingdrawingordescription | WECOWECO Electrical Connectors Inc 威科电子深圳市威科电子连接器有限公司 | |||
THREADEDINSERT,BLIND,REGULARHEADSTYLELIGHTDUTY 文件:120.98 Kbytes Page:1 Pages | WITTEN Witten Company, Inc. | |||
THREEPHASEBRIDGE 文件:94.82 Kbytes Page:7 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
LinerlessRubberSplicingTape130C 文件:115.3 Kbytes Page:3 Pages | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 |
ST130产品属性
- 类型
描述
- 型号
ST130
- 功能描述
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 1.5A I(C) | SOT-32
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
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ST |
DIP-8 |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
XG |
1922+ |
DIP4P |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
原装 |
22+23+ |
18870 |
绝对原装正品全新进口深圳现货 |
||||
PERICOM |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
|||||
槽行光电 |
2023+ |
DIP |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
XG |
2020+ |
DIP-4 |
15422 |
代理品牌,全新原装现货超低价! |
|||
PERICOM |
20+ |
N/A |
8800 |
只做原装正品 |
|||
LONEON |
23+ |
NA/ |
17222 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST |
22+ |
DIP-8 |
16900 |
支持样品 原装现货 提供技术支持! |
|||
PERICOM |
17+ |
NA |
6200 |
100%原装正品现货 |
ST130规格书下载地址
ST130参数引脚图相关
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- ST13003
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- ST1-2KMZQE
- ST1284-01A8RL
- ST1284-01A8
- ST1284
- ST125D00
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- ST-125
- ST1240
- ST1230C
- ST121C226MAJ10
- ST121C126MAJ05
- ST12100
- ST1208
- ST1200C
- ST1200
- ST11-PC
- ST1-1L2S2V-1QE
- ST1-1L2S2A1BE
- ST11KMZQE
- ST11KMZQ
- ST11-H
- ST-116
- ST1155B
- ST1155A
- ST1153A
- ST1152B
- ST1152A
- ST1151A
- ST-1144
- ST-114
- ST-113
- ST-112
- S-T111B50MC
- S-T111B34MC
- ST1117C
- ST1117B
- ST1117A
ST130数据表相关新闻
ST16C550CQ
ST16C550CQ
2023-9-25ST16C2550IQ48-F
ST16C2550IQ48-F
2022-11-2ST10F275-4TX3
全新原装现货支持第三方机构验证
2022-6-18ST1230C20K0
ST1230C20K0ST1230C20KO可控硅模块现货热卖
2022-1-10ST10F269Z2Q6WTC6106原装正品,价格优势
原装正品,价格优势量大可定
2020-1-11ST16C654DCQ
ST16C654DCQ深圳市拓亿芯电子有限公司,本公司具备一般纳税人,可开16点增值税票,货源渠道保证原厂原装正品IC,诚信为本,薄利多销。
2019-3-7
DdatasheetPDF页码索引
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