ST130价格

参考价格:¥2.1574

型号:ST13003D-K 品牌:STMicroelectronics 备注:这里有ST130多少钱,2024年最近7天走势,今日出价,今日竞价,ST130批发/采购报价,ST130行情走势销售排行榜,ST130报价。
型号 功能描述 生产厂家&企业 LOGO 操作

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forhighvoltageandhighspeedswitchingapplications

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

ST13002A

Highvoltagepowertransistor

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

NPNSiliconPowerTransistors

Thesedevicesaredesignedforhigh-voltage,high-speedpowerswitchinginductivecircuitswherefalltimeiscritical. ​​​​​​​ Theyareparticularlysuitedfor115and220VSWITCHMODEapplicationssuchasSwitchingRegulator’s,Inverters,MotorControls,Solenoid/RelaydriversandDeflection

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forpowerswitchingandelectronrectifierapplications. ​​​​​​​ ThetransistorissubdividedintoonegroupaccordingtoitsDCcurrentgain.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

■MEDIUMVOLTAGECAPABILITY ■LOWSPREADOFDYNAMICPARAMETERS ■MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION ■VERYHIGHSWITCHINGSPEED APPLICATIONS: ■ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING ■SWITCHMODEPOWERSUPPLIES DESCRIPTION Thedeviceismanufacturedusinghighvo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

■MEDIUMVOLTAGECAPABILITY ■LOWSPREADOFDYNAMICPARAMETERS ■MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION ■VERYHIGHSWITCHINGSPEED APPLICATIONS: ■ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING ■SWITCHMODEPOWERSUPPLIES DESCRIPTION Thedeviceismanufacturedusinghighvo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Highvoltagefast-switchingNPNpowertransistor

Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandmediumvoltagecapability.ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA.Thedeviceisdesi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Highvoltagefast-switchingNPNpowertransistor

Description Thedeviceismanufacturedusinghighvoltagemultiepitaxialplanartechnologyforhighswitchingspeedsandhighvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features ■Highvolt

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Highvoltagefast-switchingNPNpowertransistor

Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandhighvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features ■H

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Highvoltagefast-switchingNPNpowertransistor

Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandhighvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features ■H

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Highvoltagefast-switchingNPNpowertransistor

Description Thedeviceismanufacturedusinghighvoltagemultiepitaxialplanartechnologyforhighswitching speedsandhighvoltagecapability.ItusesacellularemitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features ■Highvol

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

NPNSiliconPowerTransistors

Thesedevicesaredesignedforhigh-voltage,high-speedpowerswitchinginductivecircuitswherefalltimeiscritical. ​​​​​​​ Theyareparticularlysuitedfor115and220VSWITCHMODEapplicationssuchasSwitchingRegulator’s,Inverters,MotorControls,Solenoid/RelaydriversandDeflection

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

Highvoltagefast-switchingNPNpowertransistor

Features ■Lowspreadofdynamicparameters ■Minimumlot-to-lotspreadforreliableoperation ■Veryhighswitchingspeed Applications ■Electronicballastforfluorescentlighting ■Switchmodepowersupplies Description Thisdeviceismanufacturedusinghighvoltage multiepitaxial

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

NPNSiliconPowerTransistors

forhigh-voltage,high-speedpowerswitchingapplications.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

■MEDIUMVOLTAGECAPABILITY ■NPNTRANSISTORS ■LOWSPREADOFDYNAMICPARAMETERS ■MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION ■VERYHIGHSWITCHINGSPEED ■THROUGH-HOLEI2PAK(TO-262)POWER PACKAGEINTUBE(SUFFIX”-1”) APPLICATIONS: ■ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTORS

DESCRIPTION ThedevicesareismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.TheyuseaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. ■MEDIUMVOLT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

■MEDIUMVOLTAGECAPABILITY ■NPNTRANSISTORS ■LOWSPREADOFDYNAMICPARAMETERS ■MINIMUMLOT-TO-LOTSPREADFOR RELIABLEOPERATION ■VERYHIGHSWITCHINGSPEED ■THROUGH-HOLEI2PAK(TO-262)POWER PACKAGEINTUBE(SUFFIX”-1”) APPLICATIONS: ■ELECTRONICBALLASTSFOR FLUORESCENTLIGHTING

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Highvoltagefast-switchingNPNpowertransistor

Features ■Lowspreadofdynamicparameters ■Minimumlot-to-lotspreadforreliableoperation ■Veryhighswitchingspeed Applications ■Electronicballastforfluorescentlighting ■Switchmodepowersupplies Description Thisdeviceismanufacturedusinghighvoltage multiepitaxial

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTORS

DESCRIPTION ThedevicesareismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability.TheyuseaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. ■MEDIUMVOLT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingasatisfactoryRBSOA. ■MEDIUMVOL

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhigh switchingspeedsandhighvoltagecapability.Itusesacellularemitterstructurewithplanar edgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. Features •DCcurr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability. ItusesaCellularEmitterstructuretoenhanceswitchingspeeds. ■IMPROVEDSPECIFICATION: -LOWERLEAKAGECURRENT -TIGHTERGAINRANGE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.ItusesaCellularEmitterstructuretoenhanceswitchingspeeds. ■IMPROVEDSPECIFICATION: -LOWERLEAKAGECURRENT -TIGHTERGAINRANGE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.TheyuseaCellularEmitterstructuretoenhanceswitchingspeeds. ■HIGHVOLTAGECAPABILITY ■NPNTRANSISTOR ■LOWSPREADOFDYNAMICPARAMETERS ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTORS

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.TheyuseaCellularEmitterstructuretoenhanceswitchingspeeds ■HIGHVOLTAGECAPABILITY ■NPNTRANSISTOR ■LOWSPREADOFDYNAMICPARAMETERS ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTORS

DESCRIPTION ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandhighvoltagecapability.TheyuseaCellularEmitterstructuretoenhanceswitchingspeeds ■HIGHVOLTAGECAPABILITY ■NPNTRANSISTOR ■LOWSPREADOFDYNAMICPARAMETERS ■

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Highvoltagefast-switchingNPNpowertransistor

Description Thedeviceismanufacturedusinghighvoltagemulti-epitaxialplanartechnologyforhighswitchingspeedsandhighvoltagecapability.Itusesahollowemitterstructuretoenhanceswitchingspeeds. Features ■Lowspreadofdynamicparameters ■Highvoltagecapability ■Minimumlo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

SCHOTTKYRECTIFIER

Features 175CTJoperation Centertapconfiguration Ultralowforwardvoltagedrop Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance Highfrequencyoperation Guardringforenhancedruggednessandlongtermreliability 

SMCDIODESMC Diode Solutions

桑德斯微电子器件(南京)有限公司

SMCDIODE

HighEnduranceCMOS192bitEEPROMWithSecureLogicAccessControl

DESCRIPTION TheST1305isa192-bitEEPROMdevicewithassociatedsecuritylogictocontrolmemoryaccess.Thecircuitincludescountingcapabilitiesandthusisverywelladaptedtoprepaidcardapplications. ■Single5VSupplyVoltage ■ProgrammingTime:5ms ■MemoryDividedInto: –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

MemoryMicromodulesGeneralInformationforD1,D2andCPackaging

DESCRIPTION MemoryCardsconsistoftwomainparts:theplasticcard,andtheembeddedMicromodule(which,inturn,carriesthesiliconchip). ■Micromodulesweredevelopedspecificallyfor embeddinginSmartcardsandMemoryCards ■TheMicromoduleprovides: –Supportforthechi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

MemoryCardIC192bitHighEnduranceEEPROMWithSecureLogicAccessControl

DESCRIPTION TheST1305Bisa192-bitEEPROMdevicewithassociatedsecuritylogictocontrolmemoryaccess.Thecircuitincludescountingcapabilitiesandthusisverywelladaptedtoprepaidcardapplications. ■SingleSupplyVoltage(5V) ■MemoryDividedInto: –16bitsofCircuitIdent

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

MemoryCardIC192bitHighEnduranceEEPROMWithSecureLogicAccessControl

DESCRIPTION TheST1305Bisa192-bitEEPROMdevicewithassociatedsecuritylogictocontrolmemoryaccess.Thecircuitincludescountingcapabilitiesandthusisverywelladaptedtoprepaidcardapplications. ■SingleSupplyVoltage(5V) ■MemoryDividedInto: –16bitsofCircuitIdent

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

MemoryCardIC192bitHighEnduranceEEPROMWithSecureLogicAccessControl

DESCRIPTION TheST1305Bisa192-bitEEPROMdevicewithassociatedsecuritylogictocontrolmemoryaccess.Thecircuitincludescountingcapabilitiesandthusisverywelladaptedtoprepaidcardapplications. ■SingleSupplyVoltage(5V) ■MemoryDividedInto: –16bitsofCircuitIdent

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

MemoryCardIC192bitHighEnduranceEEPROMWithSecureLogicAccessControl

DESCRIPTION TheST1305Bisa192-bitEEPROMdevicewithassociatedsecuritylogictocontrolmemoryaccess.Thecircuitincludescountingcapabilitiesandthusisverywelladaptedtoprepaidcardapplications. ■SingleSupplyVoltage(5V) ■MemoryDividedInto: –16bitsofCircuitIdent

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HighEnduranceCMOS192bitEEPROMWithSecureLogicAccessControl

DESCRIPTION TheST1305isa192-bitEEPROMdevicewithassociatedsecuritylogictocontrolmemoryaccess.Thecircuitincludescountingcapabilitiesandthusisverywelladaptedtoprepaidcardapplications. ■Single5VSupplyVoltage ■ProgrammingTime:5ms ■MemoryDividedInto: –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

HighEnduranceCMOS192bitEEPROMWithSecureLogicAccessControl

DESCRIPTION TheST1305isa192-bitEEPROMdevicewithassociatedsecuritylogictocontrolmemoryaccess.Thecircuitincludescountingcapabilitiesandthusisverywelladaptedtoprepaidcardapplications. ■Single5VSupplyVoltage ■ProgrammingTime:5ms ■MemoryDividedInto: –1

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 400V 1.5A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

封装/外壳:TO-225AA,TO-126-3 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 400V 1A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Highvoltagefast-switchingNPNpowertransistor

文件:240.1 Kbytes Page:10 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Highvoltagefast-switchingNPNpowertransistor

文件:240.1 Kbytes Page:10 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Highvoltagefast-switchingNPNpowertransistor

文件:234.22 Kbytes Page:12 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

Highvoltagefast-switchingNPNpowertransistor

文件:234.22 Kbytes Page:12 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

SCHOTTKYRECTIFIER

文件:211.16 Kbytes Page:5 Pages

SMCSintered Metal Company

烧结金属烧结金属公司

SMC

1.3WattsAxialLeadedZenerDiodes

VOLTAGERANGE:2.4-200VPOWER:1.3Watts Features ●CompleteVoltageRange2.4to200Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

Screwconnection

Theplugconnector130-Aserieswasdevelopedaccordingto“WhiteGoods StandardRAST5(Plug-Connection-Technologywithapitchof5mm).Duetoits diversecodingpossibilities,itoffersmaximumsafetyagainstincorrectplugging. Forthecodedversion,acorrespondingdrawingordescription

WECOWECO Electrical Connectors Inc

威科电子深圳市威科电子连接器有限公司

WECO

THREADEDINSERT,BLIND,REGULARHEADSTYLELIGHTDUTY

文件:120.98 Kbytes Page:1 Pages

WITTEN

Witten Company, Inc.

WITTEN

THREEPHASEBRIDGE

文件:94.82 Kbytes Page:7 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

LinerlessRubberSplicingTape130C

文件:115.3 Kbytes Page:3 Pages

3MMinnesota Mining and Manufacturing

明尼苏达矿务明尼苏达矿务及制造业公司

3M

ST130产品属性

  • 类型

    描述

  • 型号

    ST130

  • 功能描述

    TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 1.5A I(C) | SOT-32

更新时间:2024-6-4 17:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
DIP-8
36900
集团化配单-有更多数量-免费送样-原包装正品现货-正规
XG
1922+
DIP4P
6852
只做原装正品现货!或订货假一赔十!
原装
22+23+
18870
绝对原装正品全新进口深圳现货
PERICOM
589220
16余年资质 绝对原盒原盘 更多数量
槽行光电
2023+
DIP
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
XG
2020+
DIP-4
15422
代理品牌,全新原装现货超低价!
PERICOM
20+
N/A
8800
只做原装正品
LONEON
23+
NA/
17222
优势代理渠道,原装正品,可全系列订货开增值税票
ST
22+
DIP-8
16900
支持样品 原装现货 提供技术支持!
PERICOM
17+
NA
6200
100%原装正品现货

ST130芯片相关品牌

  • ASM-SENSOR
  • Central
  • GENESIC
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  • IRCTT
  • KSS
  • Marktech
  • PROTEC
  • RFMD
  • SOURCE
  • TAIYO-YUDEN
  • WEITRON

ST130数据表相关新闻