Description

The device is manufactured using high voltage multi-epitaxial planar technology for high

switching speeds and high voltage capability. It uses a cellular emitter structure with planar

edge termination to enhance switching speeds while maintaining the wide RBSOA.

Features

• DC current gainclassification

• High voltage capability

• Low spread of dynamic parameters

• Very high switching speed

Applications

• Electronic ballast for fluorescent lighting

• Switch mode power supplies