ST13003价格
参考价格：￥2.1574
型号：ST13003D-K 品牌：STMicroelectronics 备注：这里有ST13003多少钱，2026年最近7天走势，今日出价，今日竞价，ST13003批发/采购报价，ST13003行情走势销售排行榜，ST13003报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ST13003 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 |   | |
ST13003 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high vo | STMICROELECTRONICS 意法半导体 | | |
ST13003 | NPN Silicon Epitaxial Planar Transistor NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. | SEMTECH_ELEC 先之科半导体 | | |
ST13003 | 丝印代码：13003；High voltage fast-switching NPN power transistor Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for hig | STMICROELECTRONICS 意法半导体 | | |
ST13003 | 高压快速切换NPN功率晶体管 The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.\n\n It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. • High voltage capability \n• Low spread of dynamic parameters \n• Very high switching speed; | STMICROELECTRONICS 意法半导体 | | |
ST13003 | 封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 400V 1.5A SOT32 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high vo | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for hig | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：13003DN；High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ H | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：13003；High voltage fast-switching NPN power transistor Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for hig | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ H | STMICROELECTRONICS 意法半导体 | | ||
高压快速切换NPN功率晶体管 The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.\n\n It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. • High voltage capability \n• Low spread of dynamic parameters \n• Very high switching speed; | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High vol | STMICROELECTRONICS 意法半导体 | | ||
NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection | SEMTECH_ELEC 先之科半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 400V 1A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor 文件：240.1 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor 文件：240.1 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | |
ST13003产品属性
- 类型
描述
- Marketing Status：
Active
- Grade：
Industrial
- Transistor Polarity：
NPN
- Collector-Emitter Voltage_max(V)：
400
- Collector-Base Voltage_max(V)：
700
- Collector Current_max(A)：
1.5
- Dc Current Gain_min：
5
- Dc Current Gain_max：
25
- Test Condition for hFE (IC)：
1
- Test Condition for hFE (VCE)_spec(V)：
2
- VCE(sat)_max(V)：
1
- Test Condition for VCE(sat) - IC：
1
- Test Condition for VCE(sat) - IB_spec(mA)：
250
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
25+ |
SOT-32-3 |
12700 |
买原装认准中赛美 |
|||
ST/意法 |
2450+ |
SOT-32-3 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
STMICRO |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
ST |
25+ |
TO-126 |
20000 |
原装，请咨询 |
|||
ST/意法半导体 |
23+ |
SOT-32-3 |
12820 |
正规渠道,只有原装! |
|||
ST |
ROHS+Original |
NA |
110 |
专业电子元器件供应链/QQ 350053121 /正纳电子 |
|||
ST |
23+ |
TO-126 |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
ST/意法半导体 |
24+ |
SOT-32-3 |
16960 |
原装正品现货支持实单 |
|||
ST(意法) |
25+ |
SOT-32 |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ST |
25+23+ |
TO-126 |
33352 |
绝对原装正品全新进口深圳现货 |
ST13003芯片相关品牌
ST13003规格书下载地址
ST13003参数引脚图相关
- tda2030
- tda2003功放电路图
- tda16846
- t7272
- t680
- t5007
- t5006
- t4242
- t40
- t2222
- t2010
- t100k
- sw-262
- stm32f103
- stm32
- stk
- stc89c52rc
- stc12c5a60s2
- st70
- st18
- ST145D10
- ST145D00
- ST144D00
- ST143D00
- ST141D00
- ST141-A2
- ST141-A1
- ST1413A
- ST-1411
- ST140-A1
- ST140-1
- ST-140
- ST14
- ST13P10
- ST1394
- ST1355D
- ST1355
- ST1353
- ST-135
- ST1336D
- ST1336
- ST1335D
- ST1335
- ST1333
- ST1331
- ST1305B
- ST1305
- ST1300A
- ST13009
- ST13007DFP
- ST13007D
- ST13007
- ST13005
- ST13003N
- ST13003-K
- ST13003DN
- ST13003D-K
- ST13001
- ST1-2KMZQE
- ST1284-01A8RL
- ST1284-01A8
- ST1284
- ST125D00
- ST125C506MAJ10
- ST125C276MAJ05
- ST-125
- ST1240
- ST1230C
- ST121C226MAJ10
- ST121C126MAJ05
- ST12100
- ST1208
- ST1200C
- ST1200
- ST11-PC
- ST1-1L2S2V-1QE
- ST1-1L2S2A1BE
- ST11KMZQE
- ST11KMZQ
- ST11-H
- ST-116
- ST1155B
- ST1155A
- ST1153A
- ST1152B
- ST1152A
- ST1151A
- ST-1144
- ST-114
- ST-113
- ST-112
- S-T111B50MC
- S-T111B34MC
- ST1117C
- ST1117B
ST13003数据表相关新闻
ST16C2550IQ48TR-F 是一款由 MaxLinear 公司生产的高性能 UART（通用异步收发器）集成电路。
ST16C2550IQ48TR-F MaxLinear 800000PCS
2025-10-24ST16C550CQ
ST16C550CQ
2023-9-25ST16C2550IQ48-F
ST16C2550IQ48-F
2022-11-2ST10F275-4TX3
全新原装现货 支持第三方机构验证
2022-6-18ST1230C20K0
ST1230C20K0 ST1230C20KO 可控硅模块 现货热卖
2022-1-10ST10F269Z2Q6WTC6106原装正品，价格优势
原装正品，价格优势 量大可定
2020-1-11
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
