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ST13003价格

参考价格:¥2.1574

型号:ST13003D-K 品牌:STMicroelectronics 备注:这里有ST13003多少钱,2026年最近7天走势,今日出价,今日竞价,ST13003批发/采购报价,ST13003行情走势销售排行榜,ST13003报价。
型号 功能描述 生产厂家 企业 LOGO 操作
ST13003

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

ST13003

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high vo

STMICROELECTRONICS

意法半导体

ST13003

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. ​​​​​​​ The transistor is subdivided into one group according to its DC current gain.

SEMTECH_ELEC

先之科半导体

ST13003

丝印代码:13003;High voltage fast-switching NPN power transistor

Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for hig

STMICROELECTRONICS

意法半导体

ST13003

高压快速切换NPN功率晶体管

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.\n\n It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. • High voltage capability \n• Low spread of dynamic parameters \n• Very high switching speed;

STMICROELECTRONICS

意法半导体

ST13003

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN 400V 1.5A SOT32 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high vo

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for hig

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

丝印代码:13003DN;High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ H

STMICROELECTRONICS

意法半导体

丝印代码:13003;High voltage fast-switching NPN power transistor

Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for hig

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ H

STMICROELECTRONICS

意法半导体

高压快速切换NPN功率晶体管

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.\n\n It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. • High voltage capability \n• Low spread of dynamic parameters \n• Very high switching speed;

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High vol

STMICROELECTRONICS

意法半导体

NPN Silicon Power Transistors

These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. ​​​​​​​ They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection

SEMTECH_ELEC

先之科半导体

封装/外壳:TO-225AA,TO-126-3 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 400V 1A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

文件:240.1 Kbytes Page:10 Pages

STMICROELECTRONICS

意法半导体

High voltage fast-switching NPN power transistor

文件:240.1 Kbytes Page:10 Pages

STMICROELECTRONICS

意法半导体

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHILIPS

飞利浦

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

STMICROELECTRONICS

意法半导体

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt

STMICROELECTRONICS

意法半导体

ST13003产品属性

  • 类型

    描述

  • Marketing Status:

    Active

  • Grade:

    Industrial

  • Transistor Polarity:

    NPN

  • Collector-Emitter Voltage_max(V):

    400

  • Collector-Base Voltage_max(V):

    700

  • Collector Current_max(A):

    1.5

  • Dc Current Gain_min:

    5

  • Dc Current Gain_max:

    25

  • Test Condition for hFE (IC):

    1

  • Test Condition for hFE (VCE)_spec(V):

    2

  • VCE(sat)_max(V):

    1

  • Test Condition for VCE(sat) - IC:

    1

  • Test Condition for VCE(sat) - IB_spec(mA):

    250

更新时间:2026-5-14 12:00:00
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2511
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ST
2025+
N/A
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柒号只做原装 现货价秒杀全网
ST
TO-126
68500
一级代理 原装正品假一罚十价格优势长期供货
ST/意法半导体
21+
SOT-32-3
8860
只做原装,质量保证
ST/意法半导体
24+
SOT-32-3
10000
十年沉淀唯有原装
ST
22+
TO126
12245
现货,原厂原装假一罚十!
ST
23+
TO-126
8560
受权代理!全新原装现货特价热卖!
ST/意法半导体
24+
SOT-32-3
6000
全新原装深圳仓库现货有单必成
ST/意法
25+
TO-126
32000
ST/意法全新特价ST13003-K即刻询购立享优惠#长期有货
26+
N/A
78000
一级代理-主营优势-实惠价格-不悔选择

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