ST13003价格
参考价格：￥2.1574
型号：ST13003D-K 品牌：STMicroelectronics 备注：这里有ST13003多少钱，2026年最近7天走势，今日出价，今日竞价，ST13003批发/采购报价，ST13003行情走势销售排行榜，ST13003报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ST13003 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 |   | |
ST13003 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high vo | STMICROELECTRONICS 意法半导体 | | |
ST13003 | NPN Silicon Epitaxial Planar Transistor NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. | SEMTECH_ELEC 先之科半导体 | | |
ST13003 | 丝印代码：13003；High voltage fast-switching NPN power transistor Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for hig | STMICROELECTRONICS 意法半导体 | | |
ST13003 | 高压快速切换NPN功率晶体管 The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.\n\n It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. • High voltage capability \n• Low spread of dynamic parameters \n• Very high switching speed; | STMICROELECTRONICS 意法半导体 | | |
ST13003 | 封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 400V 1.5A SOT32 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ MEDIUM VOLTAGE CAPABILITY ■ LOW SPREAD OF DYNAMIC PARAMETERS ■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ■ VERY HIGH SWITCHING SPEED APPLICATIONS: ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high vo | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for hig | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：13003DN；High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ H | STMICROELECTRONICS 意法半导体 | | ||
丝印代码：13003；High voltage fast-switching NPN power transistor Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for hig | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ H | STMICROELECTRONICS 意法半导体 | | ||
高压快速切换NPN功率晶体管 The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.\n\n It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. • High voltage capability \n• Low spread of dynamic parameters \n• Very high switching speed; | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High vol | STMICROELECTRONICS 意法半导体 | | ||
NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid / Relay drivers and Deflection | SEMTECH_ELEC 先之科半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 400V 1A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor 文件：240.1 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | ||
High voltage fast-switching NPN power transistor 文件：240.1 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | |
ST13003产品属性
- 类型
描述
- Marketing Status：
Active
- Grade：
Industrial
- Transistor Polarity：
NPN
- Collector-Emitter Voltage_max(V)：
400
- Collector-Base Voltage_max(V)：
700
- Collector Current_max(A)：
1.5
- Dc Current Gain_min：
5
- Dc Current Gain_max：
25
- Test Condition for hFE (IC)：
1
- Test Condition for hFE (VCE)_spec(V)：
2
- VCE(sat)_max(V)：
1
- Test Condition for VCE(sat) - IC：
1
- Test Condition for VCE(sat) - IB_spec(mA)：
250
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
2511 |
SOT-32-3 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ST |
TO-126 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST/意法半导体 |
21+ |
SOT-32-3 |
8860 |
只做原装,质量保证 |
|||
ST/意法半导体 |
24+ |
SOT-32-3 |
10000 |
十年沉淀唯有原装 |
|||
ST |
22+ |
TO126 |
12245 |
现货,原厂原装假一罚十! |
|||
ST |
23+ |
TO-126 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST/意法半导体 |
24+ |
SOT-32-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST/意法 |
25+ |
TO-126 |
32000 |
ST/意法全新特价ST13003-K即刻询购立享优惠#长期有货 |
|||
26+ |
N/A |
78000 |
一级代理-主营优势-实惠价格-不悔选择 |
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ST13003规格书下载地址
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DdatasheetPDF页码索引
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