DESCRIPTION

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA.

■ MEDIUM VOLTAGE CAPABILITY

■ NPN TRANSISTOR

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

■ VERY HIGH SWITCHING SPEED

APPLICATIONS:

■ COMPACT FLUORESCENT LAMP (CFL)

■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

■ SWITCH MODE POWER SUPPLIES