DESCRIPTION

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds.

■ HIGH VOLTAGE CAPABILITY

■ NPN TRANSISTOR

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

■ VERY HIGH SWITCHING SPEED

■ FULLY CHARACTERIZED AT 125 oC

■ LARGE RBSOA

APPLICATIONS

■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING

■ SWITCH MODE POWER SUPPLIES