DESCRIPTION

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

It uses a Cellular Emitter structure to enhance switching speeds.

■ IMPROVED SPECIFICATION:

- LOWER LEAKAGE CURRENT

- TIGHTER GAIN RANGE

- DC CURRENT GAIN PRESELECTION

- TIGHTER STORAGE TIME RANGE

■ HIGH VOLTAGE CAPABILITY

■ INTEGRATED FREE-WHEELING DIODE

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■ VERY HIGH SWITCHING SPEED

■ FULLY CHARACTERIZED AT 125 oC

■ LARGE RBSOA

APPLICATIONS

■ UP TO 120W ELECTRONIC

TRANSFORMERS FOR HALOGEN LAMPS

■ SWITCH MODE POWER SUPPLIES