HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features • DC curr

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ■ IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ■ IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds. ■ HIGH VOLTAGE CAPABILITY ■ NPN TRANSISTOR ■ LOW SPREAD OF DYNAMIC PARAMETERS ■

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds ■ HIGH VOLTAGE CAPABILITY ■ NPN TRANSISTOR ■ LOW SPREAD OF DYNAMIC PARAMETERS ■

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds ■ HIGH VOLTAGE CAPABILITY ■ NPN TRANSISTOR ■ LOW SPREAD OF DYNAMIC PARAMETERS ■

高压快速切换NPN功率晶体管

封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 400V 8A TO-220FP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Series 8 Elevator Socket w/Collet Contacts & Solder Pin Tails

Series 8 Elevator Socket w/Collet Contacts & Solder Pin Tails FEATURES • Ideal for Elevating Devices (Displays, Switches, etc.) to Desired Level with 0.260 to 1.250 [6.60 to 31.75] Height Extension

NPN Silicon Transistor

NPN Silicon Transistor for high voltage, high-speed power switching application

Plastic-Encapsulate Transistors

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 8 A Collector-base voltage V(BR)CBO: 700 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 Computer Switch Power Supply

POWER TRANSISTORS(8A,400V,80W)

SWIRCHMODE SERIES NPN POWER TRNASISTOR ... designed for use in high-voltage, high-speed, power switching in inductive circuit, they are particularly suited for 115 and 220 V switchmode applications such as switching requlators, inverters, DC-DC converter, Motor Controls, Solenoid drive and Deflec