HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features • DC curr

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

• FULLY CHARACTERIZED AT 125 °C\n• VERY HIGH SWITCHING SPEED\n• IMPROVED SPECIFICATION: LOWER LEAKAGE CURRENTTIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTIONTIGHTER STORAGE TIME RANGE\n• NPN TRANSISTOR• HIGH VOLTAGE CAPABILITY\n• MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION\n• LARGE RBSOA\n• LOW ;

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ■ IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE

高压快速切换NPN功率晶体管

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. \n\n It uses a Cellular Emitter structure to enhance switching speeds. • FULLY CHARACTERIZED AT 125 °C \n• VERY HIGH SWITCHING SPEED \n• IMPROVED SPECIFICATION:LOWER LEAKAGE CURRENTTIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTIONTIGHTER STORAGE TIME RANGE \n• INTEGRATED FREE-WHEELING DIODE \n• HIGH VOLTAGE CAPABILITY \n• MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ;

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

• FULLY CHARACTERIZED AT 125 °C\n• VERY HIGH SWITCHING SPEED\n• FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING\n• IMPROVED SPECIFICATION:LOWER LEAKAGE CURRENT TIGHTER GAIN RANGE DC CURRENT GAIN PRESELECTIONTIGHTERSTORAGE TIME RANGE \n• INTEGRATED FREE-WHEELING DIODE• HIGH VOLTAGE CAPABIL;

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. ■ IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds. ■ HIGH VOLTAGE CAPABILITY ■ NPN TRANSISTOR ■ LOW SPREAD OF DYNAMIC PARAMETERS ■

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds ■ HIGH VOLTAGE CAPABILITY ■ NPN TRANSISTOR ■ LOW SPREAD OF DYNAMIC PARAMETERS ■

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds ■ HIGH VOLTAGE CAPABILITY ■ NPN TRANSISTOR ■ LOW SPREAD OF DYNAMIC PARAMETERS ■

封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS NPN 400V 8A TO-220FP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS

POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS The MJE/MJF13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Contr

POWER TRANSISTORS(8A,300-400V,80W)

8 AMPERE POWER TRANSISTORS 300 - 400 VOLTS 80 WATTS

POWER TRANSISTORS(8A,400V,80W)

SWIRCHMODE SERIES NPN POWER TRNASISTOR ... designed for use in high-voltage, high-speed, power switching in inductive circuit, they are particularly suited for 115 and 220 V switchmode applications such as switching requlators, inverters, DC-DC converter, Motor Controls, Solenoid drive and Deflec

POWER TRANSISTOR

The MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. • VCEO

Silicon Diffused Power Transistor

GENERAL DESCRIPTION The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.