位置：首页 > IC中文资料第722页 > ST13003K
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ST13003K | High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ H | STMICROELECTRONICS 意法半导体 |   | |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | |
ST13003K产品属性
- 类型
描述
- 型号
ST13003K
- 制造商
STMicroelectronics
- 功能描述
Trans GP BJT NPN 400V 1.5A 3-Pin(3+Tab) SOT-32 Bag
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMICRO |
25+ |
N/A |
18746 |
样件支持,可原厂排单订货! |
|||
STMICRO |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST |
2016+ |
TO-126 |
7000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST/意法半导体 |
24+ |
SOT-32-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
STM |
24+/25+ |
SOT-32(TO-126) |
89000 |
原装正品现货库存价优 |
|||
ST/意法半导体 |
23+ |
SOT-32-3 |
12820 |
正规渠道,只有原装! |
|||
ST/意法 |
24+ |
SOT-32 |
3800 |
大批量供应优势库存热卖 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST原装 |
25+23+ |
TO-126 |
20469 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
2022+ |
SOT-32(T |
6600 |
只做原装,假一罚十,长期供货。 |
ST13003K规格书下载地址
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DdatasheetPDF页码索引
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