High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ H

丝印代码：13003；High voltage fast-switching NPN power transistor

Features • High voltage capability • Low spread of dynamic parameters • Very high switching speed Applications • Electronic ballast for fluorescent lighting (CFL) • SMPS for battery charger Description The device is manufactured using high voltage multi-epitaxial planar technology for hig

高压快速切换NPN功率晶体管

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.\n\n It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. • High voltage capability \n• Low spread of dynamic parameters \n• Very high switching speed;

High voltage fast-switching NPN power transistor

文件：240.1 Kbytes Page：10 Pages

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 1.5A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High voltage fast-switching NPN power transistor

文件：240.1 Kbytes Page：10 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt