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RJH60D价格

参考价格：￥6.1324

型号：RJH60D2DPE-00#J3 品牌：Renesas 备注：这里有RJH60D多少钱，2026年最近7天走势，今日出价，今日竞价，RJH60D批发/采购报价，RJH60D行情走势销售排行榜，RJH60D报价。

型号	功能描述	生产厂家企业	LOGO
RJH60D0DPK	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =	RENESAS 瑞萨	RENESAS
RJH60D0DPK	IGBT DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.2V@IC=22A · High Current Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC	ISC 无锡固电	ISC
RJH60D0DPK-00-T0	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =	RENESAS 瑞萨	RENESAS
RJH60D0DPM	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =	RENESAS 瑞萨	RENESAS
RJH60D0DPQ-A0	600 V - 22 A - IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =	RENESAS 瑞萨	RENESAS
RJH60D0DPQ-E0	600V - 22A - IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed swi	RENESAS 瑞萨	RENESAS
RJH60D0DPQ-E0-T2	600V - 22A - IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed swi	RENESAS 瑞萨	RENESAS
RJH60D1DPE	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =	RENESAS 瑞萨	RENESAS
RJH60D1DPE-00-J3	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =	RENESAS 瑞萨	RENESAS
RJH60D1DPP-E0	600V - 10A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (70 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 75 ns	RENESAS 瑞萨	RENESAS
RJH60D1DPP-M0	Silicon N Channel IGBT Application: Inverter Features ● Short circuit withstand time (5 s typ.) ● Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C) ● Built in fast recovery diode (70 ns typ.) in one package ● Trench gate and thin wafer technology ● High speed switching	RENESAS 瑞萨	RENESAS
RJH60D1DPP-M0-T2	Silicon N Channel IGBT Application: Inverter Features ● Short circuit withstand time (5 s typ.) ● Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C) ● Built in fast recovery diode (70 ns typ.) in one package ● Trench gate and thin wafer technology ● High speed switching	RENESAS 瑞萨	RENESAS
RJH60D2DPE	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =	RENESAS 瑞萨	RENESAS
RJH60D2DPE-00-J3	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =	RENESAS 瑞萨	RENESAS
RJH60D2DPP-E0	600V - 12A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 80 ns	RENESAS 瑞萨	RENESAS
RJH60D2DPP-M0	Silicon N Channel IGBT cation: Inverter Silicon N Channel IGBT Application: Inverter Features Short circuit withstand time (5µs typ.) Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ. (at IC= 12 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wa	RENESAS 瑞萨	RENESAS
RJH60D2DPP-M0-T2	Silicon N Channel IGBT cation: Inverter Silicon N Channel IGBT Application: Inverter Features Short circuit withstand time (5µs typ.) Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ. (at IC= 12 A, VGE= 15 V, Ta = 25°C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wa	RENESAS 瑞萨	RENESAS
RJH60D3DPE	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =	RENESAS 瑞萨	RENESAS
RJH60D3DPE-00-J3	Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 17 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =	RENESAS 瑞萨	RENESAS
RJH60D7BDPQ-E0	600V - 50A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 50 ns	RENESAS 瑞萨	RENESAS
RJH60D0DPK_10	Silicon N Channel IGBT Application: Inverter 文件：88.45 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60D0DPK_15	600V - 22A - IGBT Application: Inverter 文件：106.4 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D0DPM	IGBTs	RENESAS 瑞萨	RENESAS
RJH60D0DPM_15	600V - 22A - IGBT Application: Inverter 文件：106.24 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D0DPM-00#T1	封装/外壳：TO-220-3 整包包装：管件描述：IGBT 600V 45A 40W TO3PFM 分立半导体产品晶体管 - UGBT、MOSFET - 单	ETC 知名厂家	ETC
RJH60D0DPQ-A0	600 V - 22 A - IGBT Application: Inverter	RENESAS 瑞萨	RENESAS
RJH60D0DPQ-E0	600V - 22A - IGBT Application: Inverter	RENESAS 瑞萨	RENESAS
RJH60D1DPE_11	Silicon N Channel IGBT Application: Inverter 文件：86.98 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60D1DPE_15	600V - 10A - IGBT Application: Inverter 文件：111.47 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D1DPE-00#J3	封装/外壳：SC-83 包装：管件描述：IGBT 600V 20A 52W LDPAK 分立半导体产品晶体管 - UGBT、MOSFET - 单	ETC 知名厂家	ETC
RJH60D1DPP-E0_15	600V - 10A - IGBT Application: Inverter 文件：122.19 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D1DPP-M0_10	Silicon N Channel IGBT Application: Inverter 文件：88.32 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60D1DPP-M0_15	600V - 10A - IGBT Application: Inverter 文件：107.4 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D2DPE_10	Silicon N Channel IGBT Application: Inverter 文件：88.78 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60D2DPE_15	600V - 12A - IGBT Application: Inverter 文件：107.82 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D2DPP-E0_15	600V - 12A - IGBT Application: Inverter 文件：120.82 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D2DPP-M0_10	Silicon N Channel IGBT Application: Inverter 文件：88.4 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60D2DPP-M0_15	600V - 12A - IGBT Application: Inverter 文件：108.44 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D3DPE_10	Silicon N Channel IGBT Application: Inverter 文件：87.98 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60D3DPE_15	600V - 17A - IGBT Application: Inverter 文件：107.74 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D3DPP-M0	Silicon N Channel IGBT Application: Inverter 文件：88.66 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60D3DPP-M0	600V - 17A - IGBT Application: Inverter 文件：108.02 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D3DPP-M0_15	600V - 17A - IGBT Application: Inverter 文件：108.02 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D5BDPQ-E0	600V - 37A - IGBT Application: Inverter 文件：111.8 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D5BDPQ-E0_15	600V - 37A - IGBT Application: Inverter 文件：111.8 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D5DPK	Silicon N Channel IGBT Application: Inverter 文件：171.79 Kbytes Page：4 Pages	RENESAS 瑞萨	RENESAS
RJH60D5DPK	Silicon N Channel IGBT Application: Inverter 文件：88.49 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60D5DPK_10	Silicon N Channel IGBT Application: Inverter 文件：88.49 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60D5DPK_15	600V - 37A - IGBT Application: Inverter 文件：107.22 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D5DPK-00-T0	Silicon N Channel IGBT Application: Inverter 文件：171.79 Kbytes Page：4 Pages	RENESAS 瑞萨	RENESAS
RJH60D5DPK-00-T0	Silicon N Channel IGBT Application: Inverter 文件：88.49 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60D5DPM	Silicon N Channel IGBT Application: Inverter 文件：88.52 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60D5DPM_15	600V - 37A - IGBT Application: Inverter 文件：107.68 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D5DPQ-A0	600 V - 37 A - IGBT Application: Inverter 文件：91.02 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60D5DPQ-E0	600V - 37A - IGBT Application: Inverter 文件：118.3 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D5DPQ-E0-T2	600V - 37A - IGBT Application: Inverter 文件：118.3 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D6DPK	Silicon N Channel IGBT Application: Inverter 文件：171.49 Kbytes Page：4 Pages	RENESAS 瑞萨	RENESAS
RJH60D6DPK_10	Silicon N Channel IGBT Application: Inverter 文件：89.4 Kbytes Page：8 Pages	RENESAS 瑞萨	RENESAS
RJH60D6DPK_15	600V - 40A - IGBT Application: Inverter 文件：107.64 Kbytes Page：10 Pages	RENESAS 瑞萨	RENESAS
RJH60D6DPK-00-T0	Silicon N Channel IGBT Application: Inverter 文件：171.49 Kbytes Page：4 Pages	RENESAS 瑞萨	RENESAS

RJH60D产品属性

类型
描述
型号
RJH60D
制造商
RENESAS
制造商全称
Renesas Technology Corp
功能描述
Silicon N Channel IGBT
Application
Inverter

RJH60D供应商更多...

更新时间：2026-1-3 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	RJH60D0DPK	瑞萨	24+	NA/	5138	原厂直销,现货供应,账期支持!	询价
深圳市亿联芯电子科技有限公司	RJH60D0DPK	RENESAS/瑞萨	2023+	TO-3P	7868	十五年行业诚信经营,专注全新正品	询价
深圳市科恒伟业电子有限公司	RJH60D0DPK	RENESAS/瑞萨	2450+	TO-3P	9850	只做原装正品现货或订货假一赔十!	询价
洪芯国际半导体（深圳）有限公司	RJH60D0DPK-00#T0	MIT	25+	原厂原封装	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
深圳市明嘉莱科技有限公司	RJH60D0DPK	RENESAS/瑞萨	25+	TO-3P	860000	明嘉莱只做原装正品现货	询价
深圳市赛美科科技有限公司	RJH60D0DPK-00-T0	RENESAS		TO3P	56520	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市宏捷佳电子科技有限公司	RJH60D0DPK	RENESAS	24+	TO247	39500	进口原装现货支持实单价优	询价
深圳市安富世纪电子有限公司	RJH60D0DPK-00#TO	RENESAS/瑞萨	20+	TO-3P	32500	现货很近!原厂很远!只做原装	询价
深圳市莱克讯科技有限公司	RJH60D0DPK	原装	1923+	TO-3P	8900	公司库存原装低价格欢迎实单议价	询价
深圳市凌旭科技有限公司	RJH60D0DPK	RENESAS/瑞萨	21+	TO-3P	1062	只做原装正品,不止网上数量,欢迎电话微信查询!	询价

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RJH60D价格

RJH60D产品属性

RJH60D供应商更多...

RJH60D芯片相关品牌

RJH60D规格书下载地址

RJH60D参数引脚图相关

RJH60D数据表相关新闻

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RJH60F5DPQ-A0#T0 晶体管 IGBT

RJ45网口连接器,8p8c,

RJ12电话座连接器

RJH60F7DPQ-A0

RJH60F7DPQ

DdatasheetPDF页码索引