Silicon N Channel IGBT Application: Inverter

Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =

IGBTs

Silicon N Channel IGBT Application: Inverter

Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =

Silicon N Channel IGBT Application: Inverter

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600V - 12A - IGBT Application: Inverter

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封装/外壳：SC-83 包装：管件 描述：IGBT 600V 25A 63W LDPAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free

SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

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SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

文件：78.26 Kbytes Page：4 Pages

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

文件：61.72 Kbytes Page：4 Pages