位置：首页 > IC中文资料第12438页 > RJH60D0DPK
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RJH60D0DPK | SiliconNChannelIGBTApplication:Inverter Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
SiliconNChannelIGBTApplication:Inverter Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTApplication:Inverter 文件：88.45 Kbytes Page：8 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
600V-22A-IGBTApplication:Inverter 文件：106.4 Kbytes Page：10 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 45A 140W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTApplication:Inverter Features •Shortcircuitwithstandtime(5μstyp.) •Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(atIC=22A,VGE=15V,Ta=25°C) •Builtinfastrecoverydiode(100nstyp.)inonepackage •Trenchgateandthinwafertechnology •Highspeedswitching tf= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighSpeedPowerSwitching SiliconNChannelIGBTHighSpeedPowerSwitching Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) Gatetoemittervoltagerating30V Pb-freeleadplatingand | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighSpeedPowerSwitching SiliconNChannelIGBTHighSpeedPowerSwitching Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) Gatetoemittervoltagerating30V Pb-freeleadplatingan | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SiliconNChannelIGBTHighSpeedPowerSwitching SiliconNChannelIGBTHighSpeedPowerSwitching Features Shortcircuitwithstandtime(5styp.) Lowcollectortoemittersaturationvoltage VCE(sat)=1.6Vtyp.(IC=22A,VGE=15V,Ta=25°C) Gatetoemittervoltagerating30V Pb-freeleadplatingan | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
RJH60D0DPK产品属性
- 类型
描述
- 型号
RJH60D0DPK
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT
- Application
Inverter
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
22+ |
TO-3P |
518000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
2023+ |
TO-3P |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
瑞萨 |
24+ |
TO3P |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
RENESAS/瑞萨 |
23+ |
TO3P |
6000 |
原装正品，支持实单 |
|||
23+ |
N/A |
38160 |
正品授权货源可靠 |
||||
瑞萨 |
23+ |
NA/ |
5138 |
原厂直销,现货供应,账期支持! |
|||
RENESAS/瑞萨 |
2024+实力库存 |
TO-3P |
12 |
只做原厂渠道 可追溯货源 |
|||
原装 |
1923+ |
TO-3P |
8900 |
公司库存原装低价格欢迎实单议价 |
|||
瑞萨 |
23+ |
TO3P |
50000 |
全新原装正品现货,支持订货 |
|||
Renesas |
2018+ |
TO-3P |
6528 |
承若只做进口原装正品假一赔十! |
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RJH60D0DPK规格书下载地址
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RJH60F7DPQ-A0，全新原装当天发货或门市自取0755-82732291.
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DdatasheetPDF页码索引
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