位置：首页 > IC中文资料第12438页 > RJH60D0DPK
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RJH60D0DPK | Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = | RENESAS 瑞萨 |   | |
RJH60D0DPK | IGBT DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.2V@IC=22A · High Current Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC | ISC 无锡固电 | | |
RJH60D0DPK | IGBTs | RENESAS 瑞萨 | | |
Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT Application: Inverter 文件：88.45 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
600V - 22A - IGBT Application: Inverter 文件：106.4 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 45A 140W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ETC 知名厂家 | ETC | | |
Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf = | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching Silicon N Channel IGBT High Speed Power Switching Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat)= 1.6 V typ. (IC= 22 A, VGE= 15 V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead plating and | RENESAS 瑞萨 | | ||
Silicon N Channel IGBT High Speed Power Switching Silicon N Channel IGBT High Speed Power Switching Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat)= 1.6 V typ. (IC= 22 A, VGE= 15 V, Ta = 25°C) Gate to emitter voltage rating 30 V Pb-free lead plating an | RENESAS 瑞萨 | |
RJH60D0DPK产品属性
- 类型
描述
- 型号
RJH60D0DPK
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel IGBT
- Application
Inverter
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MIT |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
RENESAS |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
RENESAS |
/ROHS.original |
TO247 |
15120 |
集成电路供应 -正纳电子/ 原材料及元器件IC MOS MCU |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS/瑞萨 |
21+ |
TO-3P |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
RENESAS/瑞萨 |
25+ |
TO-3P |
860000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
2023+ |
TO-3P |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
瑞萨 |
24+ |
NA/ |
5138 |
原厂直销,现货供应,账期支持! |
|||
RENESAS/瑞萨 |
20+ |
TO-3P |
32500 |
现货很近!原厂很远!只做原装 |
|||
RENESAS/瑞萨 |
2450+ |
TO-3P |
9850 |
只做原装正品现货或订货假一赔十! |
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DdatasheetPDF页码索引
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