Silicon N Channel IGBT Application: Inverter

Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =

IGBTs

600V - 22A - IGBT Application: Inverter

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封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 45A 40W TO3PFM 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Silicon N Channel IGBT Application: Inverter

Features • Short circuit withstand time (5 μs typ.) • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode (100 ns typ.) in one package • Trench gate and thin wafer technology • High speed switching tf =

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.2V@IC=22A · High Current Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC

Silicon N Channel IGBT High Speed Power Switching

Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat)= 1.6 V typ. (IC= 22 A, VGE= 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating and

Silicon N Channel IGBT High Speed Power Switching

Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat)= 1.6 V typ. (IC= 22 A, VGE= 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free lead plating an