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型号：MBRS1100T3G 品牌：ON 备注：这里有MBRS多少钱，2025年最近7天走势，今日出价，今日竞价，MBRS批发/采购报价，MBRS行情走势销售排行榜，MBRS报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Schottky Power Rectifier(Surface Mount Power Package) SchottkyBarrierRectifier SurfaceMountPowerPackage SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuit | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  |   | |
SCHOTTK Y BARRIER DIODE Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 |  | | |
SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Forsurfacemountedapplications Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Built-instrainrelief,idealforautomatedplacement Highforwardsurgecurrentc | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | | | |
Schottky Power Rectifier SchottkyPowerRectifier SurfaceMountPowerPackage SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuited | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
1.0A Surface Mount Schottky Power Rectifier Features ●Pb−FreePackagesareAvailable ●SmallCompactSurfaceMountablePackagewithJ-BendLeads ●RectangularPackageforAutomatedHandling ●HighlyStableOxidePassivatedJunction ●HighBlockingVoltage−100Volts ●175°COperatingJunctionTemperature ●GuardringforStressProt | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 |  | | |
Schottky Power Rectifier(Surface Mount Power Package) SchottkyBarrierRectifier SurfaceMountPowerPackage SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuit | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
1 Amp Schottky Rectifier ●UderwirtersLaboratoryFlammabilityClass94V-0 ●SchottkyBarrierRectifier ●GuardRingProtection ●175°CJunctionTemperature ●Surfacemountpackage | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | | |
Schottky Power Rectifier SchottkyPowerRectifier SurfaceMountPowerPackage SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuited | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Schottky Power Rectifier Surface Mount Power Package SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrier principleinalargeareametal-to-siliconpowerdiode.State-of-the-art geometryfeaturesepitaxialconstructionwithoxidepassivationand metaloverlaycontact.Ideallysuitedforlowvoltage,highfrequency rectification,or | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SCHOTTKY RECTIFIER 1 Amp Description/Features TheMBRS120surface-mountSchottkyrectifierhasbeendesignedforapplicationsrequiringlowforwarddropandsmallfootprintsonPCboards.Typicalapplicationsareindiskdrives,switchingpowersupplies,converters,free-wheelingdiodes,batterycharging,andreverseba | IRF International Rectifier |  | | |
SCHOTTK Y BARRIER DIODE Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | | | |
SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Forsurfacemountedapplications Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Built-instrainrelief,idealforautomatedplacement Highforwardsurgecurrentc | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | | | |
SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Forsurfacemountedapplications Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Built-instrainrelief,idealforautomatedplacement Highforwardsurgecurrentc | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | | | |
Surface Mount Schottky Power Rectifier SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectif | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Surface Mount Schottky Power Rectifier SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectif | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Surface Mount Schottky Power Rectifier SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectif | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Surface Mount Schottky Power Rectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Surface Mount Schottky Power Rectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SCHOTTKY RECTIFIER 1 Amp Description/Features TheMBRS120surface-mountSchottkyrectifierhasbeendesignedforapplicationsrequiringlowforwarddropandsmallfootprintsonPCboards.Typicalapplicationsareindiskdrives,switchingpowersupplies,converters,free-wheelingdiodes,batterycharging,andreverseba | IRF International Rectifier | | | |
Schottky Power Rectifier(Surface Mount Power Package) ...EmploystheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolarityprot | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
1.0 Ampere Schottky Power Rectifiers Features •CompactsurfacemountpackagewithJ-bendleads. •1.5WattPowerDissipationpackage. •1.0Ampere,forwardvoltagelessthan395mv. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
3A, 23V, 340KHz Synchronous Rectified Step-Down Converter DESCRIPTION TheMP1570isamonolithicsynchronousbuckregulator.Thedeviceintegrates100mΩMOSFETSthatprovide3Acontinuousloadcurrentoverawideoperatinginputvoltageof4.75Vto23V.Currentmodecontrolprovidesfasttransientresponseandcycle-by-cyclecurrentlimit. FEATURES • | MPSMonolithic Power Systems Inc. 美国芯源美国芯源系统有限公司 |  | | |
3A, 23V, 340KHz Synchronous Rectified Step-Down Converter DESCRIPTION TheMP2307isamonolithicsynchronousbuck regulator.Thedeviceintegrates100mΩ MOSFETSthatprovide3Aofcontinuousload currentoverawideoperatinginputvoltageof 4.75Vto23V.Currentmodecontrolprovides fasttransientresponseandcycle-by-cycle currentlimit. An | MPSMonolithic Power Systems Inc. 美国芯源美国芯源系统有限公司 | | | |
SCHOTTK Y BARRIER DIODE Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | | | |
SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Forsurfacemountedapplications Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Built-instrainrelief,idealforautomatedplacement Highforwardsurgecurrentc | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | | | |
1.0 Ampere Schottky Power Rectifiers Features •CompactsurfacemountpackagewithJ-bendleads. •1.5WattPowerDissipationpackage. •1.0Ampere,forwardvoltagelessthan395mv. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
SCHOTTKY RECTIFIER IF(AV)=1.0Amp VR=30V Description TheMBRS130LTRsurface-mountSchottkyrectifierhasbeendesignedforapplicationsrequiringlowforwarddropandsmallfootprintsonPCboards.Typicalapplicationsareindiskdrives,switchingpowersupplies,converters,free-wheelingdiodes,batterychar | IRF International Rectifier | | | |
Schottky Power Rectifier(Surface Mount Power Package) ...EmploystheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolarityprot | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
Schottky Power Rectifier SchottkyPowerRectifier SurfaceMountPowerPackage ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage, | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Schottky Power Rectifier Surface Mount Power Package ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification, orasfreewheelingandpol | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Schottky Power Rectifier Surface Mount Power Package ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification, orasfreewheelingandpol | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SCHOTTKY RECTIFIER IF(AV)=1.0Amp VR=30V Description TheMBRS130LTRsurface-mountSchottkyrectifierhasbeendesignedforapplicationsrequiringlowforwarddropandsmallfootprintsonPCboards.Typicalapplicationsareindiskdrives,switchingpowersupplies,converters,free-wheelingdiodes,batterychar | IRF International Rectifier | | | |
Schottky Rectifier, 1.0 A FEATURES •Smallfootprint,surfacemountable •Verylowforwardvoltagedrop •Highfrequencyoperation •Guardringforenhancedruggednessandlongtermreliability •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof260°C •Designedandqualifiedforindustriallevel | VishayVishay Siliconix 威世科技威世科技半导体 |  | | |
1 Amp Schottky Rectifier 1AmpSchottkyRectifier •UnderwritersLaboratoryFlammabilityClass94V-0 •SchottkyBarrierRectifier •Guardringprotection •Lowforwardvoltage •Lowthermalresistancerating | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
Surface Mount Schottky Power Rectifier SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyre | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Surface Mount Schottky Power Rectifier SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyre | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Surface Mount hottky Power Rectifier SurfaceMountSchottkyPowerRectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargeareametal-to-siliconpowerdiode.State-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyre | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Surface Mount Schottky Power Rectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Surface Mount Schottky Power Rectifier ThisdeviceemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures epitaxialconstructionwithoxidepassivationandmetaloverlay contact.Ideallysuitedforlowvoltage,highfrequencyrectification,or asfreewheelingandpol | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SCHOTTKY RECTIFIER Description/Features TheMBRS130TRsurface-mountSchottkyrectifierhasbeendesignedforapplicationsrequiringlowforwarddropandsmallfootprintsonPCboards.Typicalapplicationsareindiskdrives,switchingpowersupplies,converters,free-wheelingdiodes,batterycharging,andreverse | IRF International Rectifier | | | |
SCHOTTKY RECTIFIER Description/Features TheMBRS130TRPbFsurface-mountSchottkyrectifierhasbeendesignedforapplicationsrequiringlowforwarddropandsmallfootprintsonPCboards.Typicalapplicationsareindiskdrives,switchingpowersupplies,converters,free-wheelingdiodes,batterycharging,andreve | IRF International Rectifier | | | |
SCHOTTKY POWER RECTIFIER Features •CompactSurfaceMountwithJ-bendLeads(SMB) •1.5WattPowerDissipationPackage •1.0Ampere,ForwardVoltageLessthan600mV | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
SCHOTTK Y BARRIER DIODE Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | | | |
SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Forsurfacemountedapplications Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Built-instrainrelief,idealforautomatedplacement Highforwardsurgecurrentc | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | | | |
Surface Mount Schottky Power Rectifier(SMB Power Mount Power Package) ...employingtheSchottkyBarrierprincipleinametal–to–siliconpowerrectifier.Featuresepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyswitchingpowersupplies;freewheelingdiodesandpolarityprotectiondiodes. •C | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
Surface Mount Schottky Power Rectifier SCHOTTKYBARRIERRECTIFIER1.0AMPERE−40VOLTS ThisdeviceemploystheSchottkyBarrierprincipleinametal−to−siliconpowerrectifier.Featuresepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyswitchingpowersupplies;fre | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Surface Mount Schottky Power Rectifier SCHOTTKYBARRIERRECTIFIER1.0AMPERE−40VOLTS ThisdeviceemploystheSchottkyBarrierprincipleinametal−to−siliconpowerrectifier.Featuresepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyswitchingpowersupplies;fre | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Surface Mount Schottky Power Rectifier SCHOTTKYBARRIERRECTIFIER1.0AMPERE−40VOLTS ThisdeviceemploystheSchottkyBarrierprincipleinametal−to−siliconpowerrectifier.Featuresepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyswitchingpowersupplies;fre | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Surface Mount Schottky Power Rectifier ...employingtheSchottkyBarrierprincipleinalargeareametal–to–siliconpowerdiode.State–of–the–artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingandpolaritypr | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
Surface Mount Schottky Power Rectifier SCHOTTKYBARRIERRECTIFIER1.0AMPERE,40VOLTS SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Surface Mount Schottky Power Rectifier SCHOTTKYBARRIERRECTIFIER1.0AMPERE,40VOLTS SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Surface Mount Schottky Power Rectifier SCHOTTKYBARRIERRECTIFIER1.0AMPERE,40VOLTS SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Surface Mount Schottky Power Rectifier SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrier principleinalargeareametal−to−siliconpowerdiode. State−of−the−artgeometryfeaturesepitaxialconstructionwithoxide passivationandmetaloverlaycontact.Ideallysuitedforlowvoltage, highfrequencyrectification,or | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Surface Mount Schottky Power Rectifier SchottkyPowerRectifiersemploytheuseoftheSchottkyBarrier principleinalargeareametal−to−siliconpowerdiode. State−of−the−artgeometryfeaturesepitaxialconstructionwithoxide passivationandmetaloverlaycontact.Ideallysuitedforlowvoltage, highfrequencyrectification,or | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SCHOTTKY RECTIFIER Description TheMBRS140TRPbFsurface-mountSchottkyrectifierhasbeendesignedforapplicationsrequiringlowforwarddropandverysmallfootprintsonPCboards.Typicalapplicationsareindiskdrives,switchingpowersupplies,converters,free-wheelingdiodes,batterycharging,andreverseba | IRF International Rectifier | | | |
1 Amp Schottky Rectifier 1AmpSchottkyRectifier •LowForwardVoltage •SchottkyBarrierRectifier •GuardRingProtection •150°CJunctionTemperature •VRRM40to50Volts | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
SCHOTTKY RECTIFIER Description TheMBRS140TRPbFsurface-mountSchottkyrectifierhasbeendesignedforapplicationsrequiringlowforwarddropandverysmallfootprintsonPCboards.Typicalapplicationsareindiskdrives,switchingpowersupplies,converters,free-wheelingdiodes,batterycharging,andreverseba | IRF International Rectifier | | | |
Schottky Rectifier, 1.0 A IF(AV)1.0A VR40V DESCRIPTION TheVS-MBRS140TRPbFsurfacemountSchottkyrectifierhasbeendesignedforapplicationsrequiringlowforwarddropandverysmallfootprintsonPCboards.Typicalapplicationsareindiskdrives,switchingpowersupplies,converters,freewheelingdiodes,batter | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Forsurfacemountedapplications Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Built-instrainrelief,idealforautomatedplacement Highforwardsurgecurrentc | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | | | |
SCHOTTK Y BARRIER DIODE Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadl | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | | |
MBRS产品属性
- 类型
描述
- 型号
MBRS
- 制造商
Taiwan Semiconductor
- 功能描述
Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay(威世) |
24+ |
标准封装 |
12048 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
ON/安森美 |
24+ |
SMB |
1314 |
原装正品,现货库存,1小时内发货 |
|||
ON/安森美 |
24+ |
SMBDO-214AA |
45000 |
热卖优势现货 |
|||
ON(安森美) |
23+ |
11251 |
公司只做原装正品,假一赔十 |
||||
ON/安森美 |
/ROHS.original |
SMB |
215000 |
原装现货特价/供应元器件代理经销。在线咨询 |
|||
ON/安森美 |
22+ |
DO-214AA |
6136 |
全新原装正品 现货 优势供应 |
|||
ON/安森美 |
11+ |
SMB |
46 |
深圳原装进口无铅现货 |
|||
ON/安森美 |
23+ |
SMB |
25000 |
只做进口原装假一罚百 |
|||
ON |
21+ |
DO-214AA |
850000 |
全新原装鄙视假货 |
|||
ON |
14+ |
DO214 |
9600 |
原装进口现货,一站式服务,可开17%增票18916238831 |
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- MBRP3045NTU
- MBRP3010NTU
- MBRP2045NTU
- MBRP1-030-01
- MBRM760
- MBRM560
- MBRM5100H-13-F
- MBRM5100-13
- MBRM360-13
- MBRM360
- MBRM3100-13-F
- MBRM2H100T3G
- MBRM1H100T3G
- MBRM140T3G
- MBRM140T1G
- MBRM140T
- MBRM140ET3
- MBRM140
- MBRM130LT3G
- MBRM130LT1G-CUTTAPE
- MBRM130LT1G
- MBRM130LT
- MBRM120LT3G
- MBRM10L
- MBRM10E
- MBRM10
- MBRF880
- MBRF860
- MBRF850
- MBRF845
- MBRF840
- MBRF835
- MBRF830
- MBRF820
- MBRF7xx
- MBRF790
- MBRF760
- MBRF750
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