位置:首页 > IC中文资料 > MBRS1100

MBRS1100价格

参考价格:¥0.4372

型号:MBRS1100T3G 品牌:ON 备注:这里有MBRS1100多少钱,2026年最近7天走势,今日出价,今日竞价,MBRS1100批发/采购报价,MBRS1100行情走势销售排行榜,MBRS1100报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBRS1100

Schottky Power Rectifier(Surface Mount Power Package)

Schottky Barrier Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit

MOTOROLA

摩托罗拉

MBRS1100

丝印代码:K110;SCHOTTK Y BARRIER DIODE

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds,0.375”(9.5mm) lead l

SY

顺烨电子

MBRS1100

SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

SY

顺烨电子

MBRS1100

SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

SHUNYE

顺烨电子

MBRS1100

1.0A,100V肖特基功率整流器,表面贴装

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectif • Small Compact Surface Mountable Package with J-Bend Leads\n• Rectangular Package for Automated Handling\n• Highly Stable Oxide Passivated Junction\n• High Blocking Voltage - 100 Volts\n• 150°C Operating Junction Temperature\n• Guardring for Stress ProtectionMechanical Characteristics:\n• Case;

ONSEMI

安森美半导体

MBRS1100

1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

文件:77.54 Kbytes Page:2 Pages

ZSELEC

淄博圣诺

Schottky Power Rectifier(Surface Mount Power Package)

Schottky Barrier Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit

MOTOROLA

摩托罗拉

1 Amp Schottky Rectifier

● Uderwirters Laboratory Flammability Class 94V-0 ● Schottky Barrier Rectifier ● Guard Ring Protection ● 175°C Junction Temperature ● Surface mount package

MICROSEMI

美高森美

Schottky Power Rectifier

Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited

ONSEMI

安森美半导体

1.0A Surface Mount Schottky Power Rectifier

Features ● Pb−Free Packages are Available ● Small Compact Surface Mountable Package with J-Bend Leads ● Rectangular Package for Automated Handling ● Highly Stable Oxide Passivated Junction ● High Blocking Voltage − 100 Volts ● 175°C Operating Junction Temperature ● Guardring for Stress Prot

SUNMATE

森美特

丝印代码:B1C;Schottky Power Rectifier Surface Mount Power Package

Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or

ONSEMI

安森美半导体

Schottky Power Rectifier

Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited

ONSEMI

安森美半导体

Low power loss,high efficiency

文件:502.79 Kbytes Page:2 Pages

GXELECTRONICS

星合电子

Schottky Power Rectifier Surface Mount Power Package

文件:49.23 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Schottky Power Rectifier Surface Mount Power Package

文件:49.23 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Schottky Power Rectifier

文件:135.95 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Schottky Power Rectifier Surface Mount Power Package

文件:49.23 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Schottky Power Rectifier

文件:135.95 Kbytes Page:4 Pages

ONSEMI

安森美半导体

封装/外壳:DO-214AA,SMB 包装:散装 描述:DIODE SCHOTTKY 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

SCHOTTKY RECTIFIER

INFINEON

英飞凌

封装/外壳:DO-214AA,SMB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 100V 1A SMB 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

SCHOTTKY RECTIFIER

文件:103.36 Kbytes Page:6 Pages

IRF

SCHOTTKY RECTIFIER

文件:115.82 Kbytes Page:6 Pages

IRF

SCHOTTKY RECTIFIER

文件:115.82 Kbytes Page:6 Pages

IRF

Schottky Rectifier, 1.0 A

文件:97.04 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 1.0 A

文件:110.67 Kbytes Page:7 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 1.0 A

VISHAYVishay Siliconix

威世威世科技公司

ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS

SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • 20 mjoules Avalanche Energy Guaranteed • Excellent Prot

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

MOSPEC

统懋

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MBRS1100产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Configuration:

    Single

  • VRRM Min (V):

    100

  • VF Max (V):

    0.75

  • IRM Max (µA):

    500

  • IO(rec) Max (A):

    1

  • IFSM Max (A):

    50

  • Package Type:

    SMB-2

更新时间:2026-5-14 9:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
24+
DO-214AA
80000
专注原装正品!现货库存!
ON
23+
SMB
56000
ON
23+
SMB
5000
正规渠道,只有原装!
ON(安森美)
25+
SMB(DO-214AA)
18798
原装正品现货,原厂订货,可支持含税原型号开票。
ON(安森美)
23+
25900
新到现货,只有原装
INFINEON/英飞凌
25+
SMBDO-214AA
39465
INFINEON/英飞凌全新特价MBRS1100TRPBF即刻询购立享优惠#长期有货
ON/安森美
2025+
SMB
5000
原装进口价格优 请找坤融电子!
ON/安森美原装正品
26+
SMB
10000
全新原装正品,价格优势,长期供应,量大可订
ON
24+
N/A
12980
原装正品现货支持实单
ON/安森美
24+
SMB
1314
原装正品,现货库存,1小时内发货

MBRS1100数据表相关新闻