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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRS120T3G_V01 | Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 |   |
更新时间：2025-12-20 18:12:00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
SMBDO-214AA |
18800 |
绝对原装进口现货 假一赔十 价格优势! |
|||
ON/安森美 |
12 |
47 |
|||||
INTERNAT |
23+ |
65480 |
|||||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
IR |
23+ |
SMB |
8000 |
只做原装现货 |
|||
IR |
22+ |
SMA |
12000 |
进口原装 |
|||
24+ |
3000 |
公司现货 |
|||||
VISHAY |
19+ |
SMB |
200000 |
||||
三年内 |
1983 |
只做原装正品 |
|||||
IR |
20+ |
DO-214AA |
36800 |
原装优势主营型号-可开原型号增税票 |
MBRS120T3G_V01规格书下载地址
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DdatasheetPDF页码索引
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