. . . employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

• Compact Package with J–Bend Leads Ideal for Automated Handling

• Highly Stable Oxide Passivated Junction

• Guardring for Over–Voltage Protection

• Low Forward Voltage Drop

Peak Repetitive Reverse Voltage VRRM 40 Volts

Working Peak Reverse Voltage VRWM 40 Volts

DC Blocking Voltage VR 40 Volts

Average Rectified Forward Current (At Rated VR, TC = 110°C) IO 1.0 Amps

Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 110°C) IFRM 2.0 Amps