MBRS120T3价格

参考价格:¥0.3900

型号:MBRS120T3 品牌:ON 备注:这里有MBRS120T3多少钱,2026年最近7天走势,今日出价,今日竞价,MBRS120T3批发/采购报价,MBRS120T3行情走势销售排行榜,MBRS120T3报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBRS120T3

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectif

ONSEMI

安森美半导体

MBRS120T3

Schottky Barrier Rectifiers

EIC

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectif

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectif

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

ONSEMI

安森美半导体

封装/外壳:DO-214AA,SMB 包装:管件 描述:DIODE SCHOTTKY 20V 1A SMB 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

封装/外壳:DO-214AA,SMB 包装:散装 描述:DIODE SCHOTTKY 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

FORMOSA

美丽微半导体

CHIP SCHOTTKY BARRIER DIODES

FEATURES • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

TAYCHIPST

泰迪斯电子

MBRS120T3产品属性

  • 类型

    描述

  • 型号

    MBRS120T3

  • 功能描述

    肖特基二极管与整流器 1A 20V

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2026-1-2 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
标准封装
16948
全新原装正品/价格优惠/质量保障
47
ONSEMI/安森美
12
92
ON/安森美
2019+
SMB
36000
原盒原包装 可BOM配套
16+
SMBDO-214AA
10000
进口原装现货/价格优势!
ONSEMI/安森美
2025+
SMBDO-214AA
5000
原装进口价格优 请找坤融电子!
ON
24+
SMB
14950
ON/安森美
1733+
SMB
50155
ONSEMI/安森美
25+
DO-214AA
66000
ONSEMI/安森美全新特价MBRS120T3G即刻询购立享优惠#长期有货
ON
23+
SMB
56000
ON(安森美)
24+
SMB(DO-214AA)
5600
只做原装现货假一罚十!价格最低!只卖原装现货

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