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MBRS120T3G价格
参考价格:¥0.3162
型号:MBRS120T3G 品牌:ONSemi 备注:这里有MBRS120T3G多少钱,2025年最近7天走势,今日出价,今日竞价,MBRS120T3G批发/采购报价,MBRS120T3G行情走势销售排行榜,MBRS120T3G报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MBRS120T3G | Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectif | ONSEMI 安森美半导体 | ||
MBRS120T3G | Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectif | ONSEMI 安森美半导体 | ||
MBRS120T3G | Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | ||
MBRS120T3G | 封装/外壳:DO-214AA,SMB 包装:管件 描述:DIODE SCHOTTKY 20V 1A SMB 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | ||
Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectif | ONSEMI 安森美半导体 | |||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | |||
CHIP SCHOTTKY BARRIER DIODES FEATURES • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current. | TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd 泰迪斯电子深圳市泰迪斯电子科技有限公司 | |||
Chip Schottky Barrier Diodes - Silicon epitaxial planer type Silicon epitaxial planer type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current. | FORMOSA 美丽微半导体 |
MBRS120T3G产品属性
- 类型
描述
- 型号
MBRS120T3G
- 功能描述
肖特基二极管与整流器 1A 20V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
SMB |
56000 |
||||
ON/安森美 |
23+ |
SMB |
8215 |
原厂原装 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON |
DO-214AA |
7799 |
正品原装--自家现货-实单可谈 |
||||
ON |
08+ |
DO-214AA |
80000 |
绝对全新原装强调只做全新原装现 |
|||
ON |
23+ |
SMB |
5000 |
新到现货,只做原装进口 |
|||
ON |
24+/25+ |
9940 |
原装正品现货库存价优 |
||||
ONSEMI/安森美 |
25+ |
DO-214AA |
66000 |
ONSEMI/安森美全新特价MBRS120T3G即刻询购立享优惠#长期有货 |
|||
ON/安森美 |
22+ |
SMB |
39731 |
原装正品现货 |
|||
ON/安森美 |
1733+ |
SMB |
50155 |
MBRS120T3G规格书下载地址
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DdatasheetPDF页码索引
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