Low VCE(sat) IGBT, High speed IGBT

Features International standard packages 2nd generation HDMOS™ process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C)

Low VCE(sat) IGBT High speed IGBT

Low VCE(sat) IGBT, High speed IGBT

Features International standard packages 2nd generation HDMOS™ process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C)

HiPerFASTTM IGBT

Features • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOS™ process • MOS Gate turn-on - drive simplicity

HiPerFAST IGBT

Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Features Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity

HiPerFAST IGBT

HiPerFAST™ IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Features ● Medium frequency IGBT ● Square RBSOA ● High current handling capability ● MOS Gate turn-on - drive simplicity Applications ● PFC circuits ● Uninterruptible power supplies (UPS) ● Switch

High-Gain IGBT

Medium-Speed PT Trench IGBT Features Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Package

HiPerFASTTM IGBT with Diode

Features • International standard package • Moderate frequency IGBT and antiparallel FRED in one package • High current handling capability • Newest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC

HiPerFAST IGBT with Diode

HiPerFASTTM IGBT with Diode Combi Pack Features • International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD • High frequency IGBT and antiparallel FRED in one package • High current handling capability • Newest generation HDMOSTM process • MOS Ga

HiPerFAST IGBT

C2-Class High Speed IGBTs Features Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity

HiPerFAST IGBT with Diode

C2-Class High Speed IGBTs Features • Very high frequency IGBT • Square RBSOA • High current handling capability • MOS Gate turn-on - drive simplicity Applications • PFC circuits • Uninterruptible power supplies (UPS) • Switched-mode and resonant-mode power supplies • AC motor spe

GenX3 600V IGBT

High Speed PT IGBTs for 40-100kHz switching Features Optimized for low switching losses Square RBSOA International standard packages

GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

High Speed PT IGBTs for 40 - 100kHz Switching Features ● Optimized for Low Switching Losses ● Square RBSOA ● Anti-Parallel Schottky Diode ● International Standard Packages Advantages ● High Power Density ● Low Gate Drive Requirement Applications ● High Frequency Power Inverters ● UPS ●

GenX3 600V IGBT with Diode

High-Speed PT IGBTs for 40-100 kHz Switching Features • Optimized for Low Switching Losses • Square RBSOA • Anti-Parallel Ultra Fast Diode • International Standard Packages Advantages • High Power Density • Low Gate Drive Requirement Applications • High Frequency Power Inverters • UPS

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 60A 200W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

PT 中频 IGBT

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 70A 190W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

PT 中频 IGBT

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

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BIDW30N60T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode

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ACTIVE / SYNCHRONOUS RECTIFIER

文件：672.35 Kbytes Page：15 Pages

N-Channel Enhancement Mode MOSFET

文件：281.61 Kbytes Page：4 Pages

N-Channel Enhancement Mode MOSFET

文件：264.01 Kbytes Page：4 Pages