GenX3 600V IGBT

High Speed PT IGBTs for 40-100kHz switching Features Optimized for low switching losses Square RBSOA International standard packages

PT 高频 IGBT

• 高电流处理能力\n• 国际标准包装\n• 针对低导通和开关损耗进行了优化\n• 超快反并联二极管（可选）\n• 雪崩评级\n• 方形RBSOA\n• 300V范围内MOSFET的低成本替代选择\n• MOS栅极开启简单便捷\n• 高频IGBT;

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 60A 220W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode

High Speed PT IGBTs for 40 - 100kHz Switching Features ● Optimized for Low Switching Losses ● Square RBSOA ● Anti-Parallel Schottky Diode ● International Standard Packages Advantages ● High Power Density ● Low Gate Drive Requirement Applications ● High Frequency Power Inverters ● UPS ●

PT 高频 IGBT

• 高电流处理能力\n• 国际标准包装\n• 针对低导通和开关损耗进行了优化\n• 超快反并联二极管（可选）\n• 雪崩评级\n• 方形RBSOA\n• 300V范围内MOSFET的低成本替代选择\n• MOS栅极开启简单便捷\n• 高频IGBT;

PT 高频 IGBT

• 高电流处理能力\n• 国际标准包装\n• 针对低导通和开关损耗进行了优化\n• 超快反并联二极管（可选）\n• 雪崩评级\n• 方形RBSOA\n• 300V范围内MOSFET的低成本替代选择\n• MOS栅极开启简单便捷\n• 高频IGBT;

GenX3 600V IGBT with Diode

High-Speed PT IGBTs for 40-100 kHz Switching Features • Optimized for Low Switching Losses • Square RBSOA • Anti-Parallel Ultra Fast Diode • International Standard Packages Advantages • High Power Density • Low Gate Drive Requirement Applications • High Frequency Power Inverters • UPS

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 60A 220W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

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63A, 600V, UFS Series N-Channel IGBT

The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Description The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies o

63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel

GenX3 600V IGBT

High Speed PT IGBTs for 40-100kHz switching Features Optimized for low switching losses Square RBSOA International standard packages