IXGH30N60C3价格

参考价格:¥13.7526

型号:IXGH30N60C3 品牌:Ixys 备注:这里有IXGH30N60C3多少钱,2024年最近7天走势,今日出价,今日竞价,IXGH30N60C3批发/采购报价,IXGH30N60C3行情走势销售排行榜,IXGH30N60C3报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IXGH30N60C3

GenX3600VIGBT

HighSpeedPTIGBTsfor40-100kHzswitching Features Optimizedforlowswitchinglosses SquareRBSOA Internationalstandardpackages

IXYS

IXYS Integrated Circuits Division

IXYS
IXGH30N60C3

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 60A 220W TO247AD 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

IXYS Integrated Circuits Division

IXYS

GenX3TM600VIGBTw/SiCAnti-ParallelDiode

HighSpeedPTIGBTsfor40-100kHzSwitching Features ●OptimizedforLowSwitchingLosses ●SquareRBSOA ●Anti-ParallelSchottkyDiode ●InternationalStandardPackages Advantages ●HighPowerDensity ●LowGateDriveRequirement Applications ●HighFrequencyPowerInverters ●UPS ●

IXYS

IXYS Integrated Circuits Division

IXYS

GenX3600VIGBTwithDiode

High-SpeedPTIGBTsfor40-100kHzSwitching Features •OptimizedforLowSwitchingLosses •SquareRBSOA •Anti-ParallelUltraFastDiode •InternationalStandardPackages Advantages •HighPowerDensity •LowGateDriveRequirement Applications •HighFrequencyPowerInverters •UPS

IXYS

IXYS Integrated Circuits Division

IXYS

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 60A 220W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IXYS

IXYS Integrated Circuits Division

IXYS

600VGenX3IGBTsnextgeneration600VIGBTsforpowerconversionapplications

文件:839.36 Kbytes Page:4 Pages

IXYS

IXYS Integrated Circuits Division

IXYS

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

Features •63A,600VatTC=25oC •TypicalFallTime...............230nsatTJ=150oC •ShortCircuitRating •LowConductionLoss •HyperfastAnti-ParallelDiode Packaging JEDECSTYLETO-247

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

63A,600V,UFSSeriesN-ChannelIGBT

TheHGTG30N60C3isaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderately

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode

Description TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarieso

HARRIS

HARRIS corporation

HARRIS

63A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTG30N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

IXGH30N60C3产品属性

  • 类型

    描述

  • 型号

    IXGH30N60C3

  • 功能描述

    MOSFET 30 Amps 600V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-5-16 19:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
23+
Module
1262
原厂原装正品现货,代理渠道,支持订货!!!
IXYS(艾赛斯)
23+
N/A
7500
IXYS(艾赛斯)全系列在售
IXYS
23+
TO247AD (IXGH)
9000
原装正品,支持实单
IXYS
21+
TO247AD (IXGH)
13880
公司只售原装,支持实单
IXYS/艾赛斯
23+
NA/
5425
优势代理渠道,原装正品,可全系列订货开增值税票
IXYS/艾赛斯
22+21+
TO-247
5425
16年电子元件现货供应商 终端BOM表可配单提供样品
IXYS/艾赛斯
TO-247
265209
假一罚十原包原标签常备现货!
IXYS-艾赛斯
24+25+/26+27+
TO-247-3
6328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
IXYS
22+
TO247AD (IXGH)
9000
原厂渠道,现货配单
IXYS
24+
TO-247
12300
独立分销商,公司只做原装,诚心经营,免费试样正品保证

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