ACTIVE / SYNCHRONOUS RECTIFIER

文件：672.35 Kbytes Page：15 Pages

Secondary Side Synchronous Rectification Controller

封装/外壳：22-VFDFN 裸露焊盘 包装：托盘 描述：ACTIVE RECTIFIER CONTROLLER V-DF 集成电路（IC） 电源控制器，监视器

ACTIVE / SYNCHRONOUS RECTIFIER

文件：672.35 Kbytes Page：15 Pages

BIDW30N60T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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