Mobile/Low Voltage SDR SDRAM

·Synchronous SDRAM interface\n·Multiple Supply Voltage options: 1.8V, 2.5V, 3.3V\n·Full features of standard SDRAM plus mobile:- Partial Array Self Refresh (PASR)- Temperature Compensated Self Refresh- Selectable Output Driver Strength- Deep Power Down\n·Long term support

Mobile/Low Voltage SDR SDRAM

·Synchronous SDRAM interface\n·Multiple Supply Voltage options: 1.8V, 2.5V, 3.3V\n·Full features of standard SDRAM plus mobile:- Partial Array Self Refresh (PASR)- Temperature Compensated Self Refresh- Selectable Output Driver Strength- Deep Power Down\n·Long term support

Mobile/Low Voltage SDR SDRAM

·Synchronous SDRAM interface\n·Multiple Supply Voltage options: 1.8V, 2.5V, 3.3V\n·Full features of standard SDRAM plus mobile:- Partial Array Self Refresh (PASR)- Temperature Compensated Self Refresh- Selectable Output Driver Strength- Deep Power Down\n·Long term support

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM

DESCRIPTION The ISSI IS42G32256 is a high-speed 16-Mbit CMOS Synchronous Graphics RAM organized as 256K words x 32 bits x 2 banks. With SGRAM, all input and output signals are synchronized with the rising edge of the system clock. Programmable Mode Register and Special Registers provide a choice

256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM

DESCRIPTION The ISSI IS42G32256 is a high-speed 16-Mbit CMOS Synchronous Graphics RAM organized as 256K words x 32 bits x 2 banks. With SGRAM, all input and output signals are synchronized with the rising edge of the system clock. Programmable Mode Register and Special Registers provide a choice

256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM

DESCRIPTION The ISSI IS42G32256 is a high-speed 16-Mbit CMOS Synchronous Graphics RAM organized as 256K words x 32 bits x 2 banks. With SGRAM, all input and output signals are synchronized with the rising edge of the system clock. Programmable Mode Register and Special Registers provide a choice

256K x 32 x 2 (16-Mbit) SYNCHRONOUS GRAPHICS RAM

DESCRIPTION The ISSI IS42G32256 is a high-speed 16-Mbit CMOS Synchronous Graphics RAM organized as 256K words x 32 bits x 2 banks. With SGRAM, all input and output signals are synchronized with the rising edge of the system clock. Programmable Mode Register and Special Registers provide a choice

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

16Mx32, 32Mx16, 64Mx8 512Mb SDRAM

FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Prog

4M x 16Bits x 4Banks Mobile Synchronous DRAM

Features •JEDEC standard 3.3V, 2.5V, 1.8V power supply. •Auto refresh and self refresh. •All pins are compatible with LVCMOS interface. •8K refresh cycle / 64ms. •Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst. •Program

4M x 16Bits x 4Banks Mobile Synchronous DRAM

Features •JEDEC standard 3.3V, 2.5V, 1.8V power supply. •Auto refresh and self refresh. •All pins are compatible with LVCMOS interface. •8K refresh cycle / 64ms. •Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst. •Program

1M x 16Bits x 2Banks Low Power Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra

1M x 16Bits x 2Banks Low Power Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra

8M x 16Bits x 4Banks Mobile Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 8K refresh cycle every 16ms (A2 grade) or 64ms (Industrial, A1 grade) • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential

8M x 16Bits x 4Banks Mobile Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 8K refresh cycle every 16ms (A2 grade) or 64ms (Industrial, A1 grade) • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential

1M x 16Bits x 4Banks Mobile Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra

1M x 16Bits x 4Banks Mobile Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra

2M x 16Bits x 4Banks Mobile Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type • 1, 2, 4, 8 or Full Page for Sequential Burst • 4 or 8 for Interleave Burst • Progra

2M x 16Bits x 4Banks Mobile Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type • 1, 2, 4, 8 or Full Page for Sequential Burst • 4 or 8 for Interleave Burst • Progra

2M x 16Bits x 4Banks Mobile Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type • 1, 2, 4, 8 or Full Page for Sequential Burst • 4 or 8 for Interleave Burst • Progra

4M x 32Bits x 4Banks Mobile Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 8K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade) • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequentia

4M x 32Bits x 4Banks Mobile Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 8K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade) • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequentia

512K x 32Bits x 4Banks Mobile Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra

512K x 32Bits x 4Banks Mobile Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra

1M x 32Bits x 4Banks Mobile Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type • 1, 2, 4, 8 or Full Page for Sequential Burst • 4 or 8 for Interleave Burst • Progra

1M x 32Bits x 4Banks Mobile Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type • 1, 2, 4, 8 or Full Page for Sequential Burst • 4 or 8 for Interleave Burst • Progra

1M x 32Bits x 4Banks Mobile Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type • 1, 2, 4, 8 or Full Page for Sequential Burst • 4 or 8 for Interleave Burst • Progra

2M x 32Bits x 4Banks Mobile Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply. • Auto refresh and self refresh. • All pins are compatible with LVCMOS interface. • 4K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade). • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequ

2M x 32Bits x 4Banks Mobile Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply. • Auto refresh and self refresh. • All pins are compatible with LVCMOS interface. • 4K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade). • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequ

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TRIAC

文件：38.2 Kbytes Page：3 Pages

OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TRIAC

文件：38.2 Kbytes Page：3 Pages

Random column address every clock cycle

文件：1.66808 Mbytes Page：86 Pages