位置：首页 > IC中文资料第11022页 > IS42S16100C1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS42S16100C1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE | ISSI 矽成半导体 |   | |
IS42S16100C1 | 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM | ISSI 矽成半导体 | | |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages | ISSI 矽成半导体 | | ||
封装/外壳：50-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC DRAM 16MBIT PAR 50TSOP II 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：50-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC DRAM 16MBIT PAR 50TSOP II 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages | ISSI 矽成半导体 | | ||
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages | ISSI 矽成半导体 | |
IS42S16100C1产品属性
- 类型
描述
- 型号
IS42S16100C1
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
512K Words x 16 Bits x 2 Banks(16-MBIT) SYNCHRONOUS DYNAMIC RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
24+ |
TSSOP |
8000 |
新到现货，只做全新原装正品 |
|||
ISSI |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ISSI |
2223+ |
TSOP50 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ISSI |
22+ |
TSSOP |
8000 |
原装正品支持实单 |
|||
ISSI |
6200 |
TSOP |
17 |
100%原装正品现货 |
|||
ISSI |
23+ |
TSOP-50 |
96300 |
一级分销商 |
|||
ISSI |
25+ |
TSOP-50 |
10000 |
全新原装现货库存 |
|||
ISSI |
21+ |
TSOP-50 |
1697 |
十年信誉,只做原装,有挂就有现货! |
|||
ISSI |
25+ |
TSOP |
20 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ISSI |
24+ |
TSOP |
45000 |
只做全新原装进口现货 |
IS42S16100C1规格书下载地址
IS42S16100C1参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IS480P
- IS-480
- IS474
- IS471FE
- IS471F
- IS457
- IS456
- IS455
- IS452
- IS450
- IS445
- IS440F
- IS440
- IS438
- IS437
- IS436
- IS435
- IS432
- IS431
- IS42SM
- IS42S16100C1-7TI-TR
- IS42S16100C1-7TI
- IS42S16100C1-7T
- IS42S16100C1-7B-TR
- IS42S16100C1-7BL-TR
- IS42S16100C1-7BLI-TR
- IS42S16100C1-7BLI
- IS42S16100C1-7BL
- IS42S16100C1-7BI-TR
- IS42S16100C1-7BI
- IS42S16100C1-7B
- IS42S16100C1-6T-TR
- IS42S16100C1-6TL-TR
- IS42S16100C1-6TL
- IS42S16100C1-6T
- IS42S16100C1-5T-TR
- IS42S16100C1-5TL-TR
- IS42S16100C1-5TL
- IS42S16100C1-5T
- IS42S16100C1_07
- IS42S16100A1-7TLI
- IS42S16100A1-7TL
- IS42S16100A1-7TI
- IS42S16100A1-7T
- IS42S16100A1-6TL
- IS42S16100A1-6T
- IS42S16100A1-10TLI
- IS42S16100A1-10TL
- IS42S16100A1-10TI
- IS42S16100A1-10T
- IS42S16100A1
- IS42S16100-8T
- IS42S16100-7T-TR
- IS42S16100-7TLI
- IS42S16100-7TL
- IS42S16100-7TI
- IS42S16100-7T
- IS42S161007T
- IS42S16100-7BLI
- IS42S16100-7BL
- IS423
- IS422
- IS421
- IS420
- IS4100
- IS3H7
- IS3H4
- IS3H&K
- IS3H&J
- IS3H&I
- IS3H&H
- IS3H&GR
- IS3H&GB
- IS3H&F
- IS3H&E
- IS3H&D
- IS3H&C
- IS3H&B
- IS3H&A
- IS357B
IS42S16100C1数据表相关新闻
IS42S16100H-6TL
IS42S16100H-6TL
2023-5-11IS31AP2005-SLS2-TR
IS31AP2005-SLS2-TR
2022-12-16IS32LT3957A-ZLA3-TR ISSI eTSSOP-16 21+ 30K
IS32LT3957A-ZLA3-TR ISSI eTSSOP-16 21+ 30K
2022-3-31IS31FL3218-QFLS2-TR
IS31FL3218-QFLS2-TR
2021-10-11IS42S16100E-7TL公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-5-8IS42S16100C1-7T公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-5-8
DdatasheetPDF页码索引
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