型号 功能描述 生产厂家&企业 LOGO 操作
IS42S16100C1

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

封装/外壳:50-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 16MBIT PAR 50TSOP II 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:50-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 16MBIT PAR 50TSOP II 集成电路(IC) 存储器

ETC

知名厂家

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

北京矽成

IS42S16100C1产品属性

  • 类型

    描述

  • 型号

    IS42S16100C1

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    512K Words x 16 Bits x 2 Banks(16-MBIT) SYNCHRONOUS DYNAMIC RAM

更新时间:2025-8-14 8:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
2022+
7600
原厂原装,假一罚十
ISSI
24+
TSOP50
25540
郑重承诺只做原装进口现货
ISSI
21+
TSOP
22
原装现货假一赔十
ISSI
25
4347
原装正品
ISSI
18+
TSOP
30327
全新原装现货,可出样品,可开增值税发票
ISSI, Integrated Silicon Solut
21+
60-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
ISSI
24+
BGA
18560
假一赔十全新原装现货特价供应工厂客户可放款
ISSI
24+
TSOP
535
原装现货假一罚十
ISSI
23+
TSOP
8560
受权代理!全新原装现货特价热卖!
ISSI
22+
TSSOP50
100000
代理渠道/只做原装/可含税

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