型号 功能描述 生产厂家 企业 LOGO 操作
IS42S16100-10T

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES

ISSI

矽成半导体

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES

ISSI

矽成半导体

IS42S16100-10T产品属性

  • 类型

    描述

  • 型号

    IS42S16100-10T

  • 功能描述

    x16 SDRAM

更新时间:2025-9-28 18:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ICSI
24+/25+
117
原装正品现货库存价优
ISSI
25+
TSOP
3000
全新原装、诚信经营、公司现货销售
ISSI
18+
SOP
30323
全新原装现货,可出样品,可开增值税发票
ISSI
2023+
TSOP
3000
进口原装现货
ICSI
06+
TSOP
1000
自己公司全新库存绝对有货
ISS
23+
65480
ISSI
2015+
DIP/SMD
19889
一级代理原装现货,特价热卖!
ISSI
24+
TSOP
48
ISSI
新年份
TSOP
3500
绝对全新原装现货,欢迎来电查询
ISSI
25+
QFN
18000
原厂直接发货进口原装

IS42S16100-10T芯片相关品牌

IS42S16100-10T数据表相关新闻