位置:IS42S16100-6T > IS42S16100-6T详情

IS42S16100-6T中文资料

厂家型号

IS42S16100-6T

文件大小

739.78Kbytes

页面数量

78

功能描述

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

512K Words x 16 Bits x 2 Banks(16-MBIT) SYNCHRONOUS DYNAMIC RAM

数据手册

下载地址一下载地址二

生产厂商

ISSI

IS42S16100-6T数据手册规格书PDF详情

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

FEATURES

• Clock frequency: 166, 143, 100 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Two banks can be operated simultaneously and independently

• Dual internal bank controlled by A11 (bank select)

• Single 3.3V power supply

• LVTTL interface

• Programmable burst length – (1, 2, 4, 8, full page)

• Programmable burst sequence: Sequential/Interleave

• Auto refresh, self refresh

• 4096 refresh cycles every 128 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command

• Byte controlled by LDQM and UDQM

• Package 400-mil 50-pin TSOP II

IS42S16100-6T产品属性

  • 类型

    描述

  • 型号

    IS42S16100-6T

  • 制造商

    ISSI

  • 制造商全称

    Integrated Silicon Solution, Inc

  • 功能描述

    512K Words x 16 Bits x 2 Banks(16-MBIT) SYNCHRONOUS DYNAMIC RAM

更新时间:2025-10-4 15:04:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ISSI
2023+
SSOP
53500
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ISSI
2015+
DIP/SMD
19889
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ISSI
25+
TSOP-50
4650
ISSI
20+
SSOP
2960
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ISSI
25+
TSOP
3000
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ISSI
23+
TSOP
10000
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ISSI
23+
TSOP
55267
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ISSI
2023+
TSOP
3000
进口原装现货
ISSI
23+
SOP
8560
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ISSI
25+
TSSOP
147
百分百原装正品 真实公司现货库存 本公司只做原装 可

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