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IS42S16100价格

参考价格：￥9.8387

型号：IS42S16100E-5TL 品牌：ISSI 备注：这里有IS42S16100多少钱，2025年最近7天走势，今日出价，今日竞价，IS42S16100批发/采购报价，IS42S16100行情走势销售排行榜，IS42S16100报价。

型号	功能描述	生产厂家企业	LOGO
IS42S16100	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES	ISSI 矽成半导体	ISSI
IS42S16100	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：1.0657 Mbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100	512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM	ISSI 矽成半导体	ISSI
IS42S16100-10T	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES	ISSI 矽成半导体	ISSI
IS42S16100-10TI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES	ISSI 矽成半导体	ISSI
IS42S16100-6T	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES	ISSI 矽成半导体	ISSI
IS42S16100-7T	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES	ISSI 矽成半导体	ISSI
IS42S16100-7TI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES	ISSI 矽成半导体	ISSI
IS42S16100C1	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE	ISSI 矽成半导体	ISSI
IS42S16100C1-5T	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE	ISSI 矽成半导体	ISSI
IS42S16100C1-5TL	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE	ISSI 矽成半导体	ISSI
IS42S16100C1-6T	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE	ISSI 矽成半导体	ISSI
IS42S16100C1-6TL	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE	ISSI 矽成半导体	ISSI
IS42S16100C1-7T	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE	ISSI 矽成半导体	ISSI
IS42S16100C1-7TI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE	ISSI 矽成半导体	ISSI
IS42S16100C1-7TL	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE	ISSI 矽成半导体	ISSI
IS42S16100C1-7TLI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE	ISSI 矽成半导体	ISSI
IS42S16100_08	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：1.0657 Mbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100-5BL	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：1.0657 Mbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100-5TL	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：1.0657 Mbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100-6BL	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：1.0657 Mbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100-6BLI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：1.0657 Mbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100-6TL	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：1.0657 Mbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100-6TLI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：1.0657 Mbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100-7BL	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：1.0657 Mbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100-7BLI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：1.0657 Mbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100-7TL	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：1.0657 Mbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100-7TLI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：1.0657 Mbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100A1	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：754.51 Kbytes Page：79 Pages	ISSI 矽成半导体	ISSI
IS42S16100A1-10T	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：754.51 Kbytes Page：79 Pages	ISSI 矽成半导体	ISSI
IS42S16100A1-10TI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：754.51 Kbytes Page：79 Pages	ISSI 矽成半导体	ISSI
IS42S16100A1-10TL	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：754.51 Kbytes Page：79 Pages	ISSI 矽成半导体	ISSI
IS42S16100A1-10TLI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：754.51 Kbytes Page：79 Pages	ISSI 矽成半导体	ISSI
IS42S16100A1-6T	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：754.51 Kbytes Page：79 Pages	ISSI 矽成半导体	ISSI
IS42S16100A1-6TL	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：754.51 Kbytes Page：79 Pages	ISSI 矽成半导体	ISSI
IS42S16100A1-7T	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：754.51 Kbytes Page：79 Pages	ISSI 矽成半导体	ISSI
IS42S16100A1-7TI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：754.51 Kbytes Page：79 Pages	ISSI 矽成半导体	ISSI
IS42S16100A1-7TL	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：754.51 Kbytes Page：79 Pages	ISSI 矽成半导体	ISSI
IS42S16100A1-7TLI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：754.51 Kbytes Page：79 Pages	ISSI 矽成半导体	ISSI
IS42S16100C1_07	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100C1-5T	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100C1-5TL	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100C1-5TL	封装/外壳：50-TSOP（0.400"，10.16mm 宽）包装：卷带（TR）描述：IC DRAM 16MBIT PAR 50TSOP II 集成电路（IC）存储器	ETC 知名厂家	ETC
IS42S16100C1-5TL-TR	封装/外壳：50-TSOP（0.400"，10.16mm 宽）包装：卷带（TR）描述：IC DRAM 16MBIT PAR 50TSOP II 集成电路（IC）存储器	ETC 知名厂家	ETC
IS42S16100C1-6T	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100C1-6TL	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100C1-7B	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100C1-7BI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100C1-7BL	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100C1-7BLI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100C1-7T	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100C1-7TI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100C1-7TL	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100C1-7TLI	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：912.12 Kbytes Page：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100E	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM 文件：1.61909 Mbytes Page：82 Pages	ISSI 矽成半导体	ISSI
IS42S16100E	SDR SDRAM	ISSI 矽成半导体	ISSI
IS42S16100E-5BL	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM 文件：1.61909 Mbytes Page：82 Pages	ISSI 矽成半导体	ISSI
IS42S16100E-5T	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM 文件：1.61909 Mbytes Page：82 Pages	ISSI 矽成半导体	ISSI
IS42S16100E-5TL	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM 文件：1.61909 Mbytes Page：82 Pages	ISSI 矽成半导体	ISSI
IS42S16100E-6BL	512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM 文件：1.61909 Mbytes Page：82 Pages	ISSI 矽成半导体	ISSI

IS42S16100产品属性

类型
描述
型号
IS42S16100
制造商
ISSI
制造商全称
Integrated Silicon Solution, Inc
功能描述
512K Words*16 Bits*2 Banks(16-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S16100供应商更多...

更新时间：2025-11-22 22:58:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	IS42S16100E-7TL	ISSI	2016+	TSOP	5000	全新原装现货,只售原装,假一赔十!	询价
贸泽芯城（深圳）电子科技有限公司	IS42S16100-10T	ISSI	23+	TSOP	4723	一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、	询价
中天科工半导体（深圳）有限公司	IS42S16100C1-7TL	ISSI	存储器	TSSOP	41936	ISSI存储芯片IS42S16100C1-7TL即刻询购立享优惠#长期有货	询价
深圳市明嘉莱科技有限公司	IS42S16100-7T	ISSI/芯成	20+	明嘉莱只做原装正品现货	2510000	TSOP	询价
深圳市得捷芯城科技有限公司	IS42S16100H-7TLI	ISSI(美国芯成)	24+	TSOP-50	8298	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市振宏微科技有限公司	IS42S161007T		23+	原厂封装	9888	专做原装正品,假一罚百!	询价
深圳市赛尔通科技有限公司	IS42S16100C1-7TLI	ISSI	23+	TSOP	8500		询价
深圳市恒达亿科技有限公司	IS42S16100C1-7TL	ISSI	25+	TSOP	3000	全新原装正品现货热卖!欢迎订购!	询价
深圳市坤融电子科技有限公司	IS42S16100E-6TLI	ISSI	2025+	TSOP50	3500	原装进口价格优请找坤融电子!	询价
深圳市福田区绿盛电子商行	IS42S16100-6T	ISSI	2015+	DIP/SMD	19889	一级代理原装现货,特价热卖!	询价

IS42S16100芯片相关品牌

IS42S16100规格书下载地址

IS42S16100参数引脚图相关

IS42S16100数据表相关新闻

IS42S16100H-6TL
IS42S16100H-6TL
2023-5-11
IS31AP2005-SLS2-TR
IS31AP2005-SLS2-TR
2022-12-16
IS32LT3957A-ZLA3-TR ISSI eTSSOP-16 21+ 30K
IS32LT3957A-ZLA3-TR ISSI eTSSOP-16 21+ 30K
2022-3-31
IS31FL3218-QFLS2-TR
IS31FL3218-QFLS2-TR
2021-10-11
IS42S16100E-7TL公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-5-8
IS42S16100C1-7T公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-5-8

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IS42S16100价格

IS42S16100产品属性

IS42S16100供应商更多...

IS42S16100芯片相关品牌

IS42S16100规格书下载地址

IS42S16100参数引脚图相关

IS42S16100数据表相关新闻

IS42S16100H-6TL

IS31AP2005-SLS2-TR

IS32LT3957A-ZLA3-TR ISSI eTSSOP-16 21+ 30K

IS31FL3218-QFLS2-TR

IS42S16100E-7TL公司大量原装正品现货/长期供应

IS42S16100C1-7T公司大量原装正品现货/长期供应

DdatasheetPDF页码索引